Datasheet FDD86102 Datasheet (Fairchild)

FDD86102

G

S

D

TO-252

D-PAK

(TO-252)

D

G

S

N-Channel PowerTrench® MOSFET

100 V, 36 A, 24 mΩ
Features

 Max r

 Max r

 High performance trench technology for extremely low r

 High power and current handling capability in a widely used

surface mount package

 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed

 100% UIL tested

 RoHS Compliant

= 24 mΩ at VGS = 10 V, ID = 8 A

DS(on)

= 38 mΩ at VGS = 6 V, ID = 6 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Application

 DC - DC Conversion

March 2012

®

r

, switching performance and

DS(on)

process that has

FDD86102 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous TC = 25 °C 36

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 121 mJ

Power Dissipation TC = 25 °C 62

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

C

= 25 °C (Note 1a) 8

A

= 25 °C (Note 1a) 3.1

A

A -Continuous T

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD86102 FDD86102 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

©2012 Fairchild Semiconductor Corporation
FDD86102 Rev.C5

Thermal Resistance, Junction to Case 2.0

Thermal Resistance, Junction to Ambient (Note 1a) 40

1

°C/W

www.fairchildsemi.com

FDD86102 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 80 V, V

Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 67 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2 3.1 4 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 10 V, ID = 8 A 21 S

I

= 250 μA, referenced to 25 °C -8.5 mV/°C

D

V

= 10 V, ID = 8 A 19 24

GS

= 6 V, ID = 6 A 26 38

GS

= 10 V, ID = 8 A, TJ = 125 °C 33 44

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 180 240 pF

Reverse Transfer Capacitance 15 25 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

780 1035 pF

Gate Resistance 0.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 3 10 ns

Turn-Off Delay Time 13.4 24 ns

= 50 V, ID = 8 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 Ω

7.6 15 ns

Fall Time 2.9 10 ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 7.6 11 nC

Gate to Source Gate Charge 4.0 nC

V

DD

I

D

= 8 A

= 50 V,

13.4 19 nC

Gate to Drain “Miller” Charge 3.7 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

121 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, I

3. E

AS

FDD86102 Rev.C5

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 43 68 nC

is guaranteed by design while R

is determined by the user’s board design.

θJA

V

= 0 V, IS = 8 A (Note 2) 0.8 1.3

GS

= 0 V, IS = 2.6 A (Note 2) 0.7 1.2

V

GS

= 8 A, di/dt = 100 A/μs

I

F

a. 40 °C/W when mounted on a
1 in2 pad of 2 oz copper.

V

43 68 ns

b. 96 °C/W when mounted on a
minimum pad of 2 oz copper.

= 30 A.

AS

2

www.fairchildsemi.com

FDD86102 N-Channel PowerTrench

012345

0

10

20

30

40

VGS = 6 V

VGS = 10 V

VGS = 5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 8 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0

1

2

3

4

5

6

VGS = 4.5 V

VGS = 8 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 6 V

VGS = 5 V

PULSE DURATI ON = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

46810

10

20

30

40

50

60

70

80

TJ = 125 oC

ID = 8 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

234567

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

FDD86102 Rev.C5

Figure 5. Transfer Characteristics

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

www.fairchildsemi.com

FDD86102 N-Channel PowerTrench

03691215

0

2

4

6

8

10

ID = 8 A

VDD = 50 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

10

100

1000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.001 0.01 0.1 1 10 30

1

10

50

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

10

20

30

40

R

θJC

= 2 oC/W

V

GS

= 6 V

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

c

, CASE TEMPERATURE (

o

C)

0.1 1 10 100 300

0.1

1

10

100

DC

10 ms

1 ms

100 us

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJC

= 2

o

C/W

T

C

= 25

o

C

10

-5

10

-4

10

-3

10

-2

10

-1

1

10

50

100

1000

10000

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

SINGLE PULSE
R

θJC

= 2

o

C/W

T

C

= 25

o

C

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

C a p a c i t a n c e v s D r a i n

to Source Voltage

®

MOSFET

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

FDD86102 Rev.C5

F ig u re 1 1. F or w ar d B ia s Sa f e

erating Area

Op

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

Figure 12.

S i n g l e P u l s e M a x i m u m

Power Dissipation

4

www.fairchildsemi.com

FDD86102 N-Channel PowerTrench

10

-5

10

-4

10

-3

10

-2

10

-1

1

0.01

0.1

1

SINGLE PULSE

R

θJC

= 2 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJC

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

Typical Characteristics T

Figure 13. Junction-to-Case Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

FDD86102 Rev.C5

5

www.fairchildsemi.com

TRADEMARKS

®

™

tm

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

2Cool™
AccuPower™
AX-CAP™*

®

BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™

®

®

®

®
®

®

*

®

F-PFS™

®

FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

SM

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™

®

®

®

®

®

®*

The Power Franchise

TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC
TriFault Detect™
TRUECURRENT

®

®

®

μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™

®

®

*

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDD86102 N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDD86102 Rev.C5

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com6

Rev. I61