Page 1
May 2009
FDD8451 N-Channel PowerTrench
FDD8451
N-Channel PowerTrench
40V, 28A, 24m:
Features
Max r
Max r
Low gate charge
Fast Switching
High performance trench technology for extremely low
r
DS(on)
RoHS compliant
24m: at VGS= 10V, ID = 9A
DS(on)
30m: at VGS= 4.5V, ID = 7A
DS(on)
F
D
A
E
L
®
E
E
R
I
M
P
L
E
M
E
N
T
A
T
I
O
N
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low r
Application
DC/DC converter
Backlight inverter
D
G
DS(on)
.
tm
®
MOSFET
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous@TC=25°C 28
-Pulsed
Single Pulse Avalanche Energy (Note 3)20 mJ
Power Dissipation 30 W
Operating and Storage Temperature -55 to 150 °C
= 25°C unless otherwise noted
C
=25°C 9
A
(Note 1a)
78
Thermal Characteristics
R
TJC
R
TJA
R
TJA
Thermal Resistance, Junction to Case 4.1 °C/W
Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W
Thermal Resistance, Junction to Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8451 FDD8451 D-PAK(TO-252) 13’’ 12mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDD8451 Rev. B2
www.fairchildsemi.com1
A -Continuous @T
Page 2
FDD8451 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 40 V
Breakdown Voltage Temperature
Coefficient
ID = 250PA, referenced to
25
°C
33.5 mV/°C
Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 PA
Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1 2.1 3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
ID = 250PA, referenced to
°C
25
= 10V, ID = 9A 19 24
V
GS
V
= 4.5V, ID = 7A 23 30
GS
= 10V, ID = 9A
V
GS
T
= 150°C
J
-5.7 mV/°C
32 41
Forward Transcondductance VDS = 5V, ID = 9A 29 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 112 150 pF
Reverse Transfer Capacitance 72 110 pF
= 20V, VGS = 0V,
V
DS
f = 1MHz
Gate Resistance f = 1MHz 1.1 :
780 990 pF
m:
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 19 34 ns
VDD = 20V, ID = A
V
= 10V, R
GS
GEN
= 6:
714ns
Fall Time 210ns
Total Gate Charge at 10V
Total Gate Charge at 5V 8.6 11 nC
Gate to Source Gate Charge 2.5 nC
= 20V, ID = 9A
V
DS
V
= 10V
GS
16 20 nC
Gate to Drain “Miller”Charge 3.7 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
the drain pins. R
Source to Drain Diode Forward Voltage VGS= 0V, IS= 9A 0.87 1.2 V
Reverse Recovery Time IF = 9A, di/dt = 100A/Ps2538ns
Reverse Recovery Charge IF = 9A, di/dt = 100A/Ps1929nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
TJC
is determined by the user’s board design.
TJA
a)
40 °C/W when mounted on a
2
pad of 2 oz copper
1 in
b)
96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: Starting TJ=25°C, L= 0.1mH, IAS= 20 A, VDD=36 V, VGS= 10 V.
FDD8451 Rev. B2 www.fairchildsemi.com2
Page 3
FDD8451 N-Channel PowerTrench
Typical Characteristics T
60
VGS = 10V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics Figure 2. Normalized
2.0
ID = 9A
1.8
V
= 10V
GS
1.6
1.4
1.2
NORMALIZED
1.0
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS= 4.5V
VGS = 3.5V
VGS= 3V
= 25°C unless otherwise noted
J
VGS= 4V
NORMALIZED
, DRAIN TO
DS(on)
r
4.0
3.5
3.0
2.5
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS= 3V
V
GS
=3.5V
2.0
1.5
VGS = 4V
V
=5V
GS
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 102030405060
ID, DRAIN CURRENT(A)
VGS = 10V
On-Resistance vs Drain
Current and Gate Voltage
160
ID= 10A
(m:)
120
80
40
SOURCE ON-RESISTANCE
0
246810
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 175oC
TJ= 25oC
®
MOSFET
Figure 3.
Normalized On Resistance vs Junction
Temperature
40
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
30
20
TJ= 175oC
, DRAIN CURRENT (A)
10
D
I
0
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
Figure 5. Transfer Characteristics
FDD8451 Rev. B2 www.fairchildsemi.com3
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
VGS= 0V
10
TJ= 175oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode Forward
TJ = 25oC
TJ = -55oC
Voltage vs Source Current
Page 4
FDD8451 N-Channel PowerTrench
Typical Characteristics T
J
10
8
VDD= 15V
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
0481216
VDD = 25V
Qg, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics Figure 8.
100
TJ= 25oC
10
, AVALANCHE CURRENT(A)
AS
I
1
1E-3 0.01 0.1 1 10 100
TJ= 150oC
TJ= 125oC
tAV, TIME IN AVALANCHE(ms)
= 25°C unless otherwise noted
3000
1000
VDD = 20V
CAPACITANCE (pF)
, DRAIN CURRENT (A)
D
I
C
iss
C
oss
100
C
rss
f = 1MHz
V
= 0V
GS
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
30
25
20
15
10
VGS=4.5V
5
R
0
o
= 4.1
TJC
C/W
40 60 80 100 120 140 160
TC, CASE TEMPERATURE(oC)
VGS= 10V
40
®
MOSFET
175
Figure 9.
Unclamped Inductive Switching
Capability
100
10
LIMITED BY
PACKAGE
OPERATION IN THIS
1
AREA MAY BE
LIMITED BY
, DRAIN CURRENT (A)
D
I
0.1
110
r
DS(on)
SINGLE PULSE
= MAX RATED
T
J
O
TC = 25
C
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11.
FDD8451 Rev. B2 www.fairchildsemi.com4
Forward Bias Safe Operating Area Figure 12. Single
100us
1ms
10ms
100ms
DC
80
Figure 10.
Maximum Continuous Drain Current vs
Case Temperature
10000
VGS = 10V
1000
100
), PEAK TRANSIENT POWER (W)
P(
SINGLE PULSE
PK
10
10-510-410-310-210
t, PULSE WIDTH (s)
Dissipation
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 TC–
----------------------
I = I
25
150
-1
10010
Pulse Maximum Power
1
Page 5
FDD8451 N-Channel PowerTrench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
TJA
0.2
0.1
0.05
0.1
0.02
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
0.01
0.005
-5
10
SINGLE PULSE
-4
10
Figure 13. Transient Thermal Response Curve
= 25°C unless otherwise noted
J
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
TJC
P
DM
t
1
t
2
1/t2
x R
+ T
TJC
C
0
10
1
10
®
MOSFET
FDD8451 Rev. B2 www.fairchildsemi.com5
Page 6
TRADEMARKS
t
®
m
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
Fairchild
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FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
™*
m
®
®
®
®
*
®
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
PDP SPM™
Power-SPM™
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
The Power Franchise
TinyBoost™
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TINYOPTO™
TinyPower™
TinyPWM™
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TriFault Detect™
TRUECURRENT™*
®
t
®
®
PSerDes™
®
UHC
Ultra FRFET™
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VCX™
VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDD8451 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
FDD8451 Rev. B2
www.fairchildsemi.com6
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