Datasheet fdd8444l_f085 Datasheet

tm

FDD8444L_F085

N-Channel PowerTrench® MOSFET

40V, 50A, 6.0mΩ

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse/ Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

= 3.8mΩ at V

DS(on)

= 46nC at VGS = 5V

g(tot)

E

E

R

F

I

D

A

E

L

M

= 5V, ID = 50A

GS

P

L

E

M

E

N

T

A

T

I

O

N

January 2009

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V and 24V systems

FDD8444L_F085 N-Channel PowerTrench

®

MOSFET

©2009 Fairchild Semiconductor Corporation
FDD8444L_F085 Rev A (W)

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current Continuous (TC < 150°C, V

= 25oC, V

amb

= 10V, with R

GS

= 10V) (Note 1) 50

GS

= 52oC/ W) 16

θJA

Pulsed See Figure 4

E

AS

P

D

T

J

Single Pulse Avalanche Energy (Note 2) 295 mJ

Power Dissipation 153 W

o

Derate above 25

, T

Operating and Storage Temperature -55 to +175

STG

C1.02W/

Thermal Characteristics

FDD8444L_F085 N-Channel PowerTrench

AContinuous (T

o

C

o

C

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.98

Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area 52

o

o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8444L FDD8444L_F085 TO-252AA 13” 12mm 2500 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA11.83V

Drain to Source On Resistance

= 25°C unless otherwise noted

J

V

= 32V, - - 1

DS

= 0V TJ = 150oC - - 250

V

GS

I

= 50A, VGS= 10V - 3.5 5.2

D

= 50A, VGS= 5V - 3.8 6.0

I

D

= 50A, VGS= 4.5V - 4.0 6.5

I

D

= 50A, VGS= 5V,

I

D

T

= 175oC

J

- 6.8 10.7

C/W

C/W

µA

mΩ

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 605 - pF

Reverse Transfer Capacitance - 400 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz - 1.7 - Ω

Total Gate Charge at 5V VGS = 0 to 5V

Threshold Gate Charge VGS = 0 to 2V - 5.4 7 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 10.9 - nC

Gate to Drain “Miller“ Charge - 21 - nC

FDD8444L_F085 Rev A (W) www.fairchildsemi.com2

V

DD

I

= 50A

D

I

= 1.0mA

g

- 5530 - pF

-4660nC

= 20V

- 16.3 - nC

FDD8444L_F085 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 18.7 - ns

Turn-On Rise Time - 46 - ns

Turn-Off D elay Time - 42 - ns

Turn-Off Fall Time - 19.2 - ns

Turn-Off Ti me - - 96 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: Package current limitation is 50A.
2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A.

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge - 29 38 nC

= 20V, ID = 50A

V

DD

V

= 5V, RGS = 2Ω

GS

I

= 50A - 0.9 1.25

SD

= 25A - 0.8 1.0

I

SD

= 50A, dIF/dt = 100A/µs

I

F

- - 104 ns

-3444ns

V

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

FDD8444L_F085 Rev A (W) www.fairchildsemi.com3

requirements, see AEC Q101 at: http://www.aecouncil.com/

Typical Characteristics

FDD8444L_F085 N-Channel PowerTrench

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

D = 0.50

0.20

JC

θ

0.10

0.05

0.02

0.01

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

SINGLE PULSE

0.01

-5

10

Figure 3.

-4

10

-3

10

t, RECTANGULAR PULSE DURATION(s)

Normalized Maximum Transient Thermal Impedance

140

120

VGS = 10V

CURRENT LIMITED
BY PACKAGE

100

80

VGS = 5V

60

40

, DRAIN CURRENT (A)

D

I

20

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE(oC)

Figure 2.

Maximum Continuous Drain Current vs

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

x R

θJC

-1

10

®

MOSFET

t

1

t

2

2

+ T

θJC

C

0

10

4000

VGS = 10V

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

100

, PEAK CURRENT (A)

DM

I

SINGLE PULSE

10

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDD8444L_F085 Rev A (W) www.fairchildsemi.com4

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25

CURRENT AS FOLLOWS:

-2

10

I = I

25

10

C DERATE PEAK

175 - T

150

-1

C

0

10

Typical Characteristics

FDD8444L_F085 N-Channel PowerTrench

1000

100

10

LIMITED

, DRAIN CURRENT (A)

D

I

0.1

BY PACKAGE

1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(on)

SINGLE PULSE

T

= MAX RATED

J

o

T

= 25

C

C

1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5.

100

80

60

40

, DRAIN CURRENT (A)

20

D

I

Forward Bias Safe Operating Area

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 5V

V

DD

TJ = 175oC

TJ = 25oC

TJ = -55oC

10us

100us

1ms

10ms

DC

500

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R

≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100 1000

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

tAV, TIME IN AVALANCHE (ms)

Figure 6. Unclamped Inductive Switching

Capability

200

V

GS

VGS = 5V

150

100

50

, DRAIN CURRENT (A)

D

I

PULSE DURATION = 80µs

= 10V

DUTY CYCLE = 0.5% MAX

V

= 4V

GS

VGS = 3.5V

VGS = 3V

®

MOSFET

0

0.51.01.52.02.53.03.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7.

30

25

20

(mΩ)

Transfer Characteristics Figure 8.

I

PULSE DURATION = 80µs

= 50A

D

DUTY CYCLE = 0.5% MAX

15

10

, DRAIN TO SOURCE

5

ON-RESISTANCE

DS(on)

r

0

345678910

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 9.

Drain to Source On-Resistance

TJ = 175oC

TJ = 25oC

Variation vs Gate to Source Voltage

FDD8444L_F085 Rev A (W) www.fairchildsemi.com5

0

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

Saturation Characteristics

1.8

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-80 -40 0 40 80 120 160 200

Figure 10.

TJ, JUNCTION TEMPERATURE(oC)

Normalized Drain to Source On

ID = 50A
V

GS

Resistance vs Junction Temperature

= 10V

Typical Characteristics

FDD8444L_F085 N-Channel PowerTrench

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200

Figure 11.

10000

1000

CAPACITANCE (pF)

100

0.1 1 10

V

= V

GS

DS

I

= 250µA

D

TJ, JUNCTION TEMPERATURE(oC)

Normalized Gate Threshold Voltage vs

Junction Temperature

C

iss

C

oss

C

rss

f = 1MHz

= 0V

V

GS

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.10

ID = 250uA

1.05

1.00

0.95

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.90

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

®

10

ID = 50A

8

VDD = 15V

VDD = 20V

6

VDD = 25V

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

0

V

60

0 20406080100

Q

, GATE CHARGE(nC)

g

MOSFET

Figure 13.

Capacitance vs Drain to Source

Voltage

FDD8444L_F085 Rev A (W) www.fairchildsemi.com6

Figure 14.

Gate Charge vs Gate to Source Voltage

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FDD8444L_F085 N-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDD8444L_F085 Rev A (W)

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I37