Datasheet fdd8426h Datasheet

FDD8426H

Dual N & P-Channel PowerTrench® MOSFET

N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ

FDD8426H Dual N & P-Channel PowerTrench

September 2009

Features

Q1: N-Channel

 Max r  Max r

Q2: P-Channel

 Max r  Max r  100% UIL Tested  RoHS Compliant

= 12 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 15 mΩ at VGS = 4.5 V, ID = 11 A

DS(on)

= 17 mΩ at VGS = -10 V, ID = -10 A

DS(on)

= 27 mΩ at VGS = -4.5 V, ID = -8.3 A

DS(on)

D1/D2

G1

S1

Dual DPAK 4L

S2

G2

General Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench tailored to minimize on-state resistance and yet maintain superior switching performance.

®

process that has been especially

Applications

 Inverter  H-Bridge

G1

D1 D2

S1

N-Channel

G2

S2

P-Channel

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

E

AS

, T

T

J

STG

Drain to Source Voltage 40 -40 V Gate to Source Voltage ±20 ±20 V Drain Current - Continuous (Package Limited) 17 -17

- Continuous (Silicon Limited) T

- Continuous T

- Pulsed 40 -40 Power Dissipation for Single Operation TC = 25°C (Note 1) 56 65

T Single Pulse Avalanche Energy (Note 3) 112 162 mJ Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

= 25°C 56 -48

C

= 25°C 12 -10

A

= 25°C (Note 1a) 3.1

A

= 25°C (Note 1b) 1.3

A

W T

Thermal Characteristics

R

θJC

R

θJC

Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 1.4 Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 1.4

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8426H FDD8426H TO-252-4L 13” 12mm 2500units

FDD8426H Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

= 250 µA, VGS = 0 V

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current

D

I

= -250 µA, VGS = 0 V

D

ID = 250 µA, referenced to 25 °C I

= -250 µA, referenced to 25 °C

D

V

= 32 V, V

DS

V

= -32 V, V

DS

Gate to Source Leakage Current VGS = ±20 V, V

GS GS

DS

= 0 V = 0 V

= 0 V

Q1Q240

-40

Q1 Q2

V

35

-32

±100 ±100nAnA

mV/°C

1

-1

I

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 µA

GS

V

= VDS, ID = -250 µA

GS

ID = 250 µA, referenced to 25 °C I

= -250 µA, referenced to 25 °C

D

= 10 V, ID = 12 A

V

GS

V

= 4.5 V, ID = 11 A

GS

V

= 10 V, ID = 12 A, TJ = 125 °C

GS

V

= -10 V, ID = -10 A

GS

V

= -4.5 V , ID = -8.3 A

GS

V

= -10 V , ID = -10 A, TJ = 125 °C

GS

V

= 5 V, ID = 12 A

DD

V

= -5 V, ID = -10 A

DD

Q1Q21.5

-1.5

Q1 Q2

Q1

Q2

Q1 Q2

-6

9.3 11 14

13 19 19

53 31

2

3.0

2

-3.0

6

mV/°C

12 15 22

17 27 30

µA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Q1

= 20 V, VGS = 0 V, f = 1MHZ

V

DS

Q2

= -20 V, VGS = 0 V, f = 1MHZ

V

DS

Q1 Q2

2055 1900

255 330

165 200

1.1

3.3

2735 2650

335 440

245 300

pF

Ω

Q1 V

= 20 V, ID = 12 A,

DD

V

= 10 V, R

GS

Q2

= -20 V, ID = -10 A,

V

DD

V

= -10 V, R

GS

V

= 0 V to 10 V

GS

V

= 0 V to -10 V

GS

V

= 0 V to 5 V

GS

V

= 0 V to -5 V

GS

GEN

= 6 Ω

Q1 V I

D

Q2 V I

D

= 20 V,

DD

= 12 A

= -20 V,

DD

= -10 A

Q1 Q2

9.7

9.72020

4.9

6.91014 27

43

32

51

3.7

7.51015 38

53

37

52

20

28

20

28

6.3

6.6

7.1

8

ns

nC

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

-0.8 22

25 11

14

1.2

-1.2 35

40 20

22

is determined

θCA

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mo unted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source-Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

GS

V

= 0 V, IS = -10 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/µs

F

Q2 I

= -10 A, di/dt = 100 A/µs

F

Q1 Q2

is guaranteed by design while R

θJC

FDD8426H Dual N & P-Channel PowerTrench

V

ns

nC

Q1

Q2

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, N-ch: L = 1 mH, IAS = 15 A, VDD =36 V, VGS = 10 V; P-ch: L = 1 mH, IAS = -18 A, VDD = -36 V, VGS = -10 V.

a. 40 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

a. 40 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

b. 96 °C/W when mounted on a minimum pad of 2 oz copper

®

MOSFET

FDD8426H Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

40

30

20

10

, DRAIN CURRENT (A)

D

I

0

0.0 0.5 1.0 1.5 2.0

VGS = 4 V

VGS = 3.5 V

V

DS

Figure 1.

1.8

ID = 12 A V

= 10 V

GS

1.5

1.2

NORMALIZED

0.9

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

VGS = 10 V

VGS = 6 V

VGS = 4.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

o

C)

= 25°C unless otherwise noted

J

2.5

2.0

VGS = 3.5 V

1.5

NORMALIZED

1.0

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 10203040

I

D

Nor ma liz ed O n- Res istan ce

vs Drain Current and Gate Voltage

300

(mΩ)

200

DRAIN TO

,

100

DS(on)

r

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SOURCE VO LTAGE (V)

GS

V

GS

, DRAIN CURRENT (A)

TJ = 125 oC

TJ = 25 oC

VGS = 4.5 V

= 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 12 A

VGS = 6 V

V

= 10 V

GS

®

MOSFET

Figure 3. Norma li ze d O n Resistance

vs Junction Temperature

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

30

V

= 5 V

DS

20

10

, DRAIN CURRENT (A)

D

I

0

1234

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

Figure 5. Transfer Characteristics

Figure 4.

On-Resistan ce vs Gat e to

Source Voltage

40

V

= 0 V

GS

10

TJ = 150 oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Di ode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

FDD8426H Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

10

ID = 12 A

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 10203040

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

20

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE (ms)

V

= 20 V

DD

TJ = 125 oC

VDD = 10 V

VDD = 30 V

TJ = 25 oC

TJ = 150 oC

= 25°C unless otherwise noted

J

5000

1000

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

100

0.1 1 10 40

VDS, DRAIN TO SOURCE VOLTAGE (V)

Cap aci tan ce v s Dr ain

to Source Voltage

80

60

40

, DRAIN CURRENT (A)

20

D

I

R

= 1.4 oC/W

θJC

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (

C

iss

C

oss

C

rss

®

MOSFET

V

= 10 V

GS

V

= 4.5 V

GS

o

C)

Figure 9.

100

10

THIS AREA IS LIMITED BY r

1

SINGLE PULSE

, DRAIN CURRENT (A)

T

D

I

= MAX RATED

J

R

θJC

= 25

T

C

0.1

0.1 1 10 100 200

Figure 11. Forward Bias Safe

Unc l amp ed I nduc tiv e

Switching Capability

DS(on)

o

= 1.4

C/W

o

C

VDS, DRAIN to SOURCE VOLTAGE (V)

Operating Area

100 us

1 ms

10 ms 100 ms 1 s

Figure 10.

1000

100

), PEAK TRANSIENT POWER (W)

PK

P(

50

10

Ma ximum Con ti nuous Dr ain

Current vs Case Temperature

SINGLE PULSE R

T

-4

Figure 12.

-3

10

t, PULS E WIDTH (sec)

Single Pulse M aximu m

Power Dissipation

10

θJC

= 25

C

-2

= 1.4

o

C/W

o

C

-1

10

FDD8426H Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.1

0.01

0.2

0.1

0.05

0.02

0.01

-4

10

Figure 13. Junction-to-Case Transient Thermal Response Curve

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

10

-3

10

Figure 14.

SINGLE PULSE

= 1.4 oC/W

R

θJC

-3

10

t, RECTANGULAR PULSE DURATION (sec)

SINGLE PULSE R

= 96 oC/W

θJA

(Note 1b)

-2

10

t, RECTANGULAR PULSE DURATION (sec)

Junction-to-Ambient Transient Thermal Response Curve

NORMALIZED THERMAL

θJC

Z

IMPEDANCE,

0.001

θJA

Z

IMPEDANCE,

0.001

0.0001

= 25°C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

NOTES:

NOTES: DUTY FACTOR: D = t1/t

DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

PEAK TJ = PDM x Z

-1

0

10

P

DM

t

1

t

2

1/t2

x R

+ T

θJC

θJc

C

-1

10

®

MOSFET

P

DM

t

1

t

2

x R

+ T

x R

+ T

θJA

A

2

10

3

10

θJA

1

10

FDD8426H Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

40

30

20

10

, DRAIN CURRENT (A)

D

-I

0

01234

Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain

1.8

ID = -10 A V

GS

1.5

VGS = -10 V

VGS = -6 V

VGS = -4.5 V

VGS = -4 V

VGS = -3.5 V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= -10 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

3.0

2.5

VGS = -3.5 V

2.0

1.5

NORMALIZED

1.0

PULSE DURATION = 80 µ s

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5% MAX

0.5 0 10203040

-ID, DRAIN CURRENT (A)

Current and Gate Voltage

80

(mΩ)

60

VGS = -4 V

VGS = -4.5 V

VGS = -6 V

V

= -10 V

GS

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = -10 A

®

MOSFET

1.2

NORMALIZED

0.9

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

Figure 17. Normalized On-Resistance

vs Junction Temperature

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

30

V

= -5 V

DS

20

TJ = 150 oC

10

, DRAIN CURRENT (A)

D

-I

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

TJ = 25 oC

-VGS, GATE TO SOURCE V OLTAGE (V)

TJ = -55 oC

40

, DRAIN TO

DS(on)

r

20

T

= 25

SOURCE ON-RESISTANCE

0

o

C)

J

246810

-VGS, GATE TO S O URCE VOLTAGE (V )

o

C

TJ = 125 oC

Figure 18. On-Resistance vs Gate to

Source Voltage

40

V

= 0 V

GS

10

TJ = 150 oC

1

0.1

, REVERSE DRAIN CURRENT (A)

S

-I

0.01

0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode

Forward Voltag e vs Source Current

FDD8426H Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

10

ID = -10 A

8

6

4

V

2

, GATE TO SOURCE VOLTAGE (V)

GS

-V

0

0 10203040

Figure 21. Gate Charge Characteristics

20

10

, AVALANCHE CURRENT (A)

AS

-I

1

0.01 0.1 1 10 100 500

VDD = -10 V

= -20 V

DD

VDD = -30 V

Qg, GATE CHARGE (nC)

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

TJ = 25 oC

TJ = 150 oC

= 25°C unless otherwise noted

J

5000

1000

CAPACITANCE (pF)

f = 1 MHz V

= 0 V

GS

100

0.1 1 10 40

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 22. Capacitance vs Drain

to Source Voltag e

60

40

V

GS

20

, DRAIN CURRENT (A)

D

-I

R

= 1.4 oC/W

θJC

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (

C

= -4.5 V

C

iss

C

oss

C

rss

®

MOSFET

V

= -10 V

GS

o

C)

Figure 23. Unclamped Inductive

Switching Capability

100

100 us

Figur e 2 4. Max imum C on tinuo us Drain

Current vs Case Temperature

1000

SINGLE PULSE R

= 1.4 oC/W

θJC

10

THIS AREA IS LIMITED BY r

SINGLE PULSE

1

, DRAIN CURRENT (A)

T

D

-I

= MAX RATED

J

R

θJC

T

= 25

C

0.1

0.1 1 10 100 200

ds(on)

= 1.4 oC/W

o

C

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 25. Fo rward Bias Safe

Operating Area

1 ms

10 ms 100 ms

1 s

100

), PEAK TRANSIENT POWER (W)

PK

P(

50

-4

10

-3

10

t, PULSE WIDTH (sec)

-2

10

-1

10

Figure 26. Single Pulse Maximum Power

Dissipation

FDD8426H Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

0.1

0.01

0.001

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 1.4

R

θJC

-4

10

Figure 27. Junction-to-Case Transient Thermal Response Curve

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

10

-3

10

o

C/W

SINGLE PULSE R

= 96 oC/W

θJA

(Note 1b)

-3

10

t, RECTANGULAR PULSE DURATION (sec)

-2

10

t, RECTANGULAR PULSE DURATION (sec)

NORMALIZED THERMAL

θJC

IMPEDANCE, Z

0.05

θJA

Z

IMPEDANCE,

0.0001

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

0

10

P

DM

t

1

t

2

1/t2

x R

+ T

θJC

C

-1

10

®

MOSFET

P

DM

t

1

t

2

x R

+ T

θJA

A

1

10

2

10

3

10

Figure 28. Junction-to-Ambient Transient Thermal Response Curve

Dimensional Outline and Pad Layout

FDD8426H Dual N & P-Channel PowerTrench

®

MOSFET

TRADEMARKS

tm

®

tm

The following includes registered and unregistered trademar ks and service marks, owned by Fair child Semicondu ctor and/or its glo bal subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

®

® ®

®

*

®

FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

PDP SPM™ Power-SPM™

PowerTrench

®

SM

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3

®

SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

®

TRUECURRENT™*

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDD8426H Dual N & P-Channel PowerTrench

®

MOSFET

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Preliminary First Production

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Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The data sheet is for reference information only.

Rev. I41