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FDD7030BL/FDU7030BL
FDD7030BL/FDU7030BL
30V N-Channel PowerTrench MOSFET
June 2003
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
in a small package.
DS(ON)
Features
• 56 A, 30 V R
R
• Low gate charge
• Fast Switching
= 9.5 mΩ @ VGS = 10 V
DS(ON)
= 13 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor Drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Continuous Drain Current @TC=25°C (Note 3) 56 A
@TA=25°C (Note 1a) 14
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 60
@TA=25°C (Note 1a) 2.8
@TA=25°C (Note 1b) 1.3
Operating and Storage Junction Temperature Range –55 to +175
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 2.5
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD7030BL FDD7030BL D-PAK (TO-252) 13’’ 12mm 2500 units
FDU7030BL FDU7030BL I-PAK (TO-251) Tube N/A 75
2003 Fairchild Semiconductor Corp.
(Note 1b)
°C/W
96
FDD7030BL/FDU7030BL Rev CW)
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Electrical Characteristics T
FDD7030BL/FDU7030BL
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 14A 174 mJ
Drain-Source Avalanche Current 14 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V ±100
30 V
26
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 14 A,TJ=125°C
1 1.8 3 V
–5
7.5
9.6
11
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 14 A 56 S
9.5
13
16
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1425 pF
Output Capacitance 350 pF
Reverse Transfer Capacitance
Gate Resistance V
VDS = 15 V, V
f = 1.0 MHz
= 15 mV, f = 1.0 MHz 1.3 pF
OSC
GS
= 0 V,
150 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 9 18 ns
Turn–Off Delay Time 31 50 ns
Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
13 23 ns
Total Gate Charge 14 20 nC
Gate–Source Charge 4 nC
Gate–Drain Charge
VDS = 15V, ID = 14 A,
VGS = 5 V
5 nC
FDD7030BL/FDU7030BL Rev. B(W)
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Electrical Characteristics T
FDD7030BL/FDU7030BL
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.3 A
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time 23 nS
VGS = 0 V, IS = 2.3 A (Note 2)
IF = 14 A, diF/dt = 100 A/µs
Diode Reverse Recovery Charge
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) R
= 45°C/W when mounted on a
θJA
1in2 pad of 2 oz copper
0.74 1.2 V
11 nC
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and R
R
D
DS(ON)
Scale 1 : 1 on letter size paper
is at T
DS(on)
and VGS = 10V. Package current limitation is 21A
J(max)
FDD7030BL/FDU7030BL Rev. B(W)
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Typical Characteristics
, DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
FDD7030BL/FDU7030BL
60
VGS=10V
50
6.0V
40
30
20
D
I
10
0
0 0.5 1 1.5 2 2.5
4.0V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5V
4.5V
3.0V
3
VGS = 3.0V
2.8
2.6
2.4
2.2
2
1.8
, NORMALIZED
1.6
DS(ON)
1.4
R
1.2
1
0.8
0 10 20 30 40 50 60
4.0V
4.5V
ID, DRAIN CURRENT (A)
5.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.8
ID = 14A
1.6
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
0.03
0.025
0.02
0.015
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
TA = 25oC
0.005
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
6.0V
10V
ID = 7A
Figure 3. On-Resistance Variation
60
VDS = 5V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
1.5 2 2.5 3 3.5 4
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
withTemperature
TA =125oC
25oC
-55oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature
FDD7030BL/FDU7030BL Rev. B(W)
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Typical Characteristics
, GATE-SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
r(t), NORMALIZED EFFECTIVE TRANSIENT
SINGLE PULSE
0.02
0.2
FDD7030BL/FDU7030BL
10
ID = 14A
8
6
4
2
GS
V
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
VDS = 10V
20V
15V
2000
1600
C
ISS
1200
800
C
CAPACITANCE (pF)
OSS
400
C
0
0 5 10 15 20 25 30
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
1000
100
R
LIMIT
DS(ON)
10
1
VGS = 10V
SINGLE PULSE
D
I
0.1
R
= 96oC/W
θ
JA
TA = 25oC
0.01
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10s
DC
100ms
1s
1ms
10ms
100µs
100
80
60
40
20
P(pk), PEAK TRANSIENT POWER (W)
0
0.01 0.1 1 10 100 1000
t1, TIME (sec)
f = 1MHz
VGS = 0 V
SINGLE PULSE
R
= 96°C/W
θ
JA
TA = 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
1
D = 0.5
0.1
0.01
THERMAL RESISTANCE
0.001
0.001 0.01 0.1 1 10 100 1000
Power Dissipation
R
(t) = r(t) * R
θJA
R
θ
0.1
0.05
0.0
JA
P(pk)
TJ - TA = P * R
Duty Cycle, D = t1 / t
t1, TIME (sec)
= 96 °C/W
t
1
t
2
θJA
(t)
θJA
2
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD7030BL/FDU7030BL Rev. B(W)
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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Across the board. Around the world.™
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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