Page 1
tm
FDD6N20 / FDU6N20
D
G
S
G
S
D
D-PAK
FDD Series
I-PAK
FDU Series
G
D
S
N-Channel MOSFET
200V, 4.5A, 0.8Ω
FDD6N20 / FDU6N20 N-Channel MOSFET
May 2007
TM
UniFET
Features
•R
• Low gate charge ( Typ. 4.7nC )
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A
DS(on)
( Typ. 6.3pF )
rss
= 25oC unless otherwise noted*
C
Symbol Parameter Ratings Units
Drain to Source Voltage 200 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 40 W
C
- Derate above 25
STG
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 18 A
Single Pulsed Avalanche Energy (Note 2) 60 mJ
Avalanche Current (Note 1) 4.5 A
Repetitive Avalanche Energy (Note 1) 4.0 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 4.5
C
= 100oC) 2.7
C
o
C0.32W/
300
o
o
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3.1
Thermal Resistance, Junction to Ambient 110
o
C/W
A
o
C
C
C
©2007 Fairchild Semiconductor Corporation
FDD6N20 / FDU6N20 Rev. A
www.fairchildsemi.com1
Page 2
FDD6N20 / FDU6N20 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD6N20 FDD6N20TM D-PAK 380mm 16mm 2500
FDD6N20 FDD6N20TF D-PAK 380mm 16mm 2000
FDU6N20 FDU6N20TU I-PAK - - 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 200 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC - 0.28 - V/oC
D
V
= 200V, V
DS
= 160V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.3A - 0.6 0.8 Ω
Forward Transconductance VDS = 40V, ID = 2.3A (Note 4) -2.9-S
Input Capacitance
Output Capacitance - 45 60 pF
Reverse Transfer Capacitance - 6.3 9.5 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 160V, ID = 6A
Gate to Source Gate Charge - 1.2 - nC
Gate to Drain “Miller” Charge - 2.2 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 170 230 pF
-4.76.1nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 5.6 21.2 ns
Turn-Off Delay Time - 15 40 ns
Turn-Off Fall Time - 12.8 35.5 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5.9mH, I
≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BV
3: I
SD
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 18 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.4 - μC
= 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 100V, ID = 6A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 4.5A - - 1.4 V
SD
= 6A
SD
- 8.3 26.7 ns
- 120 - ns
FDD6N20 / FDU6N20 Rev. A
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
0.1 1 10
0.1
1
10
30
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
20
246810
0.1
1
10
20
-55oC
150oC
*Notes:
1. V
DS
= 25V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
024681012
0.0
0.5
1.0
1.5
2.0
2.5
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.40.60.81.01.21.41.61.8
1
10
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
50
0.1 1 10
10
100
1000
5
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
012345
0
2
4
6
8
10
*Note: ID = 6A
VDS = 50V
V
DS
= 100V
V
DS
= 160V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD6N20 / FDU6N20 N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD6N20 / FDU6N20 Rev. A
3
www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 2.3A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
1
2
3
4
5
I
D
, Drain Current [A]
TC, Case Temperature [oC]
110100
0.01
0.1
1
10
20μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
400
DC
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 3.1oC/W Max.
2. Duty Factor, D=t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
5
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FDD6N20 / FDU6N20 N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
FDD6N20 / FDU6N20 Rev. A
4
www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD6N20 / FDU6N20 N-Channel MOSFET
FDD6N20 / FDU6N20 Rev. A
5
www.fairchildsemi.com
Page 6
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Voltage D rop
V
SD
IFM, B ody Diode Forw ard C urrent
Body D iode R everse Current
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body D iode
Forw ard V oltage Drop
V
SD
IFM, B ody Diode Forw ard C urrent
Body D iode R everse Current
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
D =
G ate P ulse W idth
Gate Pulse Period
--------------------------
FDD6N20 / FDU6N20 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDD6N20 / FDU6N20 Rev. A
6
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Page 7
Mechanical Dimensions
D-PAK
FDD6N20 / FDU6N20 N-Channel MOSFET
FDD6N20 / FDU6N20 Rev. A
7
www.fairchildsemi.com
Page 8
Mechanical Dimensions
I-PAK
FDD6N20 / FDU6N20 N-Channel MOSFET
FDD6N20 / FDU6N20 Rev. A
www.fairchildsemi.com8
Page 9
TRADEMARKS
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tm
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and is not intended to be an exhaustive list of all such trademarks.
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FDD6N20 / FDU6N20 N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I28
FDD6N20 / FDU6N20 Rev. A
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