Datasheet FDD6796A, FDU6796A-F071 Datasheet (Fairchild)

Download

Page 1

March 2009

FDD6796A / FDU6796A_F071

N-Channel PowerTrench® MOSFET

25 V, 5.7 mΩ Features

 Max r  Max r  100% UIL tested  RoHS Compliant

= 5.7 mΩ at VGS = 10 V, ID = 20 A

DS(on)

= 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r switching speed.

DS(on)

and fast

Applications

 Vcore DC-DC for Desktop Computers and Servers  VRM for Intermediate Bus Architecture

FDD6796A / FDU679A_F071 N-Channel PowerTrench

D-PAK (TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 150 Single Pulse Avalanche Energy (Note 3) 40 mJ Power Dissipation TC = 25 °C 42 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +175 °C

Short-Lead I-PAK (TO-251AA)

= 25 °C unless otherwise noted

= 25 °C 67

= 25 °C (Note 1a) 20

= 25 °C (Note 1a) 3.7

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 3.6 Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

MOSFET

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD6796A FDD6796A D-PAK (TO-252) 13 ’’ 12 mm 2500 units FDU6796A FDU6796A_F071 TO-251AA N/A(Tube) N/A 75 units

www.fairchildsemi.com

Page 2

FDD6796A / FDU679A_F071 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 µA, referenced to 25 °C 16 mV/°C

= 0 V 1 µA

= 0 V ±100 nA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 µA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 20 A 4.3 5.7

= 4.5 V, ID = 15.2 A 11.1 15.0

= 10 V, ID = 20 A, TJ = 150 °C 6.5 8.6

Forward Transconductance VDS = 5 V, ID = 20 A 118 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 298 400 pF Reverse Transfer Capacitance 266 400 pF Gate Resistance 1.2 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 714ns Turn-Off Delay Time 19 34 ns Fall Time 410ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V 14 20 nC Gate to Source Charge 4.0 nC Gate to Drain “Miller” Charge 5.7 nC

= 13 V, VGS = 0 V,

f = 1 MHz

= 13 V, ID = 20 A,

= 10 V, R

GEN

= 6 Ω

= 20 A

= 13 V,

1336 1780 pF

816ns

24 34 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

Notes: 1: R

θJA

θJC

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A.

3: E

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 4 10 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins .

is guaranteed by design while R

is determined by the user’s board design.

θJA

40 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 3.1 A (Note 2) 0.8 1.2

= 0 V, IS = 20 A (Note 2) 0.9 1.3

= 20 A, di/dt = 100 A/µs

15 27 ns

96 °C/W when mounted on a minimum pad

www.fairchildsemi.com

Page 3

FDD6796A / FDU679A_F071 N-Channel PowerTrench

Typical Characteristics T

150

VGS = 10 V

120

DRAIN CURRENT (A)

0.0 0.5 1.0 1.5 2.0 2.5

Figure 1.

1.8

1.6

On Region Characteristics Figure 2.

ID = 20 A V

= 10 V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150 175

JUNCTION TEMPERATURE

VGS = 8 V

VGS = 6 V

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

DRAIN TO SOURCE VOLTAGE (V)

= 25 °C unless otherwise noted

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

(

)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

0 30 60 90 120 150

= 4 V

VGS = 8 V

DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 6 V

= 10 V

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

)

Ω

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

GATE TO S O URCE VOLTAGE (V )

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 20 A

TJ = 150 oC

TJ = 25 oC

MOSFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

150

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

120

= 3 V

, DRAIN CURRENT (A)

0123456

TJ = 175 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = -55 oC

Figure 4.

On-Re sistance v s Gate to

Source Voltage

200 100

= 0 V

, REVERSE DRAIN CURRENT (A)

TJ = 175 oC

0.1

0.2 0.4 0.6 0.8 1.0 1.2

Figure 6.

TJ = 25 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Sou rce to Drain Diode

TJ = -55 oC

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDD6796A / FDU679A_F071 N-Channel PowerTrench

Typical Characteristics T

ID = 20 A

= 10 V

, GATE TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

Figure 7.

100

, AVALANCHE CURRENT (A)

0.001 0.01 0.1 1 10 100

VDD = 13 V

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

TJ = 125 oC

TJ = 150 oC

tAV, TIME IN AVALANCHE (ms)

= 25 °C unless otherwise noted

VDD = 16 V

TJ = 25 oC

5000

1000

CAPACITANCE (pF)

f = 1 MHz

= 0 V

100

0.1 1 10

VDS, DRAIN TO SOURCE VOLTA G E (V)

Capacitance vs Drain

to Source Voltage

= 10 V

Limited by Package

DRAIN CURRENT (A)

= 3.6 oC/W

25 50 75 100 125 150 175

CASE TEMPERATURE

= 4.5 V

(

)

iss

oss

rss

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

200

100

THIS AREA IS LIMITED BY r

, DRAIN CURRENT (A)

0.1

0.1 1 10 100

DS(on)

SINGLE PULSE T

= MAX RATED

= 3.6 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 10.

Ma xi mum Co nti nuous Drain

Current vs Case Temperature

PEAK TRANSIENT POWER (W)

)

(

2000 1000

100

-5

Figure 12.

VGS = 10 V

SINGLE PULSE R

= 3.6 oC/W

= 25 oC

-4

-3

-2

t, PULSE WIDTH (sec)

-1

Single Pu ls e M aximum

10 us

100 us

1 ms 10 ms

100 ms

Power Dissipation

www.fairchildsemi.com

Page 5

FDD6796A / FDU679A_F071 N-Channel PowerTrench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-5

Figure 13. Junction-to-Case Transient Thermal Response Curve

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

-3

SINGLE PULSE R

NORMALIZED THERMAL

IMPEDANCE,

0.0005

0.1

IMPEDANCE,

0.01

0.001

0.1

= 25 °C unless otherwise noted

= 3.6 oC/W

-4

-3

t, RECTANGULAR PULSE DURATION (sec)

SINGLE PULSE

= 96 oC/W

(

Note 1b

)

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

NOTES:

-2

DUTY FACTOR: D = t PEAK TJ = PDM x Z

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1/t2

x R

θJC

-1

1/t2

x R

θJA

110

+ T

θJc

+ T

θJA

100 1000

MOSFET

Figure 14.

Junction-to-Ambient Transient Thermal Response Curve

www.fairchildsemi.com

Page 6

TRADEMARKS

The following includes registered and unregistered tra demarks and service marks, owned by Fairchild Semico nductor and/or its glo bal subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™ F-PFS™

* EZSWITCH™ and FlashWriter

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

® ®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench

PowerXS™

Programmable Active Droop™

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

The Power Franchise

TinyBoost™ TinyBuck™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDD6796A / FDU679A_F071 N-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support

Counterfeiting of semiconductor parts is a growing prob lem in the indust ry. All manufactur es of semiconductor product s are experiencin g counterfeiting of their parts. Customers who inadvertently purchase count erfeit par ts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and man ufacturing delays. Fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. Farichild stro ngly encourage s customers t o purchase Farichild par ts either dire ctly from Fairchil d or from Authorized Fa irchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers t o do their part in st opping this practice by buying direct or from authorized distrib utors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications f or product development. S pecifications may change in any manner without notice.

Datasheet contains preliminary data; sup plementary dat a will be pu blished at a lat er date. Fairchild Semiconductor reserves the right to make ch anges at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I37