Datasheet FDD6778A Datasheet (Fairchild)

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FDD6778A

(

)

N-Channel PowerTrench® MOSFET

25 V, 14.0 mΩ Features

 Max r  Max r  100% UIL tested  RoHS Compliant

= 14.0 mΩ at VGS = 10 V, ID = 10.0 A

DS(on)

= 30.0 mΩ at VGS = 4.5 V, ID = 9.7 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r switching speed.

Applications

 Vcore DC-DC for Desktop Computers and Servers  VRM for Intermediate Bus Architecture

FDD6778A N-Channel PowerTrench

January 2009

and fast

DS(on)

MOSFET

D-PAK

TO-252

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 10

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50 Single Pulse Avalanche Energy (Note 3) 12 mJ Power Dissipation TC = 25 °C 24 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +175 °C

= 25 °C unless otherwise noted

= 25 °C 30

= 25 °C (Note 1a) 12

= 25 °C (Note 1a) 3.7

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 6.2 Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD6778A FDD6778A D-PAK (TO-252) 13 ’’ 12 mm 2500 units

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FDD6778A N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 µA, referenced to 25 °C 17 mV/°C

= 0 V 1 µA

= 0 V ±100 nA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 µA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 10.0 A 11.4 14

= 4.5 V, ID = 9.7 A 22.0 30.0

= 10 V , ID = 10.0 A, TJ = 150 °C 17.2 21.2

Forward Transconductance VDS = 5 V, ID = 10.0 A 33 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 142 190 pF Reverse Transfer Capacitance 129 195 pF Gate Resistance 0.8 Ω

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 14 26 ns Fall Time 210ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V 7 10 nC Gate to Source Charge 2.0 nC Gate to Drain “Miller” Charge 2.8 nC

= 13 V, VGS = 0 V,

f = 1 MHz

= 13 V, ID = 10.0 A,

= 10 V, R

GEN

= 6 Ω

V I

= 13 V,

= 10.0 A

652 870 pF

612ns

12 17 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

Notes: 1: R

θJA

θJC

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

of 12 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 12 A.

3: E

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 3 10 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins .

is guaranteed by design while R

is determined by the user’s board design.

θJA

40 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 3.1 A (Note 2) 0.9 1.3

= 0 V, IS = 10.0 A (Note 2) 0.8 1.2

= 10.0 A, di/dt = 100 A/µs

96 °C/W when mounted on a minimum pad

14 26 ns

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FDD6778A N-Channel PowerTrench

Typical Characteristics T

DRAIN CURRENT (A)

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 1.

1.8

ID = 10 A

1.6

= 10 V

1.4

VGS = 10 V

VGS = 6 V

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 6 V

NORMALIZED

= 3.5 V

= 10 V

DRAIN TO SOURCE ON-RESISTANCE

0 1020304050

DRAIN CURRENT (A)

Norma li zed On -R esi st ance

vs Drain Current and Gate Voltage

)

Ω

(

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 10 A

= 4.5 V

MOSFET

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150 175

JUNCTION TEMPERATURE

(

)

Fi gu re 3. Normalized O n R es istance

vs Junction Temperature

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 3.5 V

, DRAIN CURRENT (A)

0123456

TJ = 175 oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

, GATE TO SOURCE VOLTA G E (V)

Figure 4.

On-Resistance vs Gate to

TJ = 150 oC

TJ = 25 oC

Source Voltage

= 0 V

TJ = 175 oC

, REVERSE DRAIN CURRENT (A)

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 5. Transfer Characteristics

Figure 6.

Sou rce to Dr ain Diode

Forward Voltage vs Source Current

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FDD6778A N-Channel PowerTrench

Typical Characteristics T

= 25 °C unless otherwise noted

ID = 10 A

= 10 V

VDD = 16 V

, GATE TO SOURCE VOLTAGE (V)

03691215

Qg, GATE CHARGE (nC)

Figure 7.

Gate Charge Characteristics Figure 8.

, AVALANCHE CURRENT (A)

0.0001 0.001 0.01 0.1 1 10

TJ = 150 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

VDD = 13 V

TJ = 25 oC

2000

1000

CAPACITANCE (pF)

f = 1 MHz V

= 0 V

100

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTA GE (V)

Cap ac ita nce vs Dra in

to Source Voltage

DRAIN CURRENT (A)

Limited by Package

25 50 75 100 125 150 175

= 10 V

= 4.5 V

θJC

CASE TEMPERATURE

= 6.2 oC/W

(

)

iss

oss

rss

MOSFET

Figure 9.

Unc lam ped Ind u ct i ve

Switching Capability

100

THIS A REA IS LIMITED BY r

, DRAIN CURRENT (A)

0.1

0.1 1 10 70

DS(on)

SINGLE PULSE

= MAX RATED

= 6.2 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 10.

Ma xim um Contin uous Drai n

Current vs Case Temperature

8000

10 us 100 us

1000

VGS = 10 V

SINGLE PULSE R

= 6.2 oC/W

= 25 oC

1 ms 10 ms

100 ms DC

100

PEAK TRANSIENT POWER (W)

)

(

-5

Figure 12.

-4

-3

t, PULSE WIDTH (sec)

10-210

-1

Single Pulse Maximum

Power Dissipation

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FDD6778A N-Channel PowerTrench

Typical Characteristics T

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001 10

2 1

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001 10

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-5

-4

Figure 13. Junction-to-Case Transient Thermal Response Curve

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

-3

Figure 14.

= 25 °C unless otherwise noted

NOTES:

SINGLE PULSE

= 6.2 oC/W

-3

-2

DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

θJC

t, RECTANGULAR PULSE DURATION (sec)

SINGLE PULSE

= 96 oC/W

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1/t2

θJA

(Note 1b)

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

Junction-to-Ambient Transient Thermal Response Curve

1/t2

x R

+ T

θJc

+ T

θJA

MOSFET

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The following includes registered and unregistered tra demarks and service marks, owned by Fairchild Semico nductor and/or its glo bal subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

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™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™ F-PFS™

* EZSWITCH™ and FlashWriter

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FDD6778A N-Channel PowerTrench

MOSFET

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Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications f or product development. S pecifications may change in any manner without notice.

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Rev. I37