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FDD6690A
(
)
N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690A
February 1999
PRELIMINARY
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for superior
switching performance.
Features
• 46 A, 30 V. R
R
DS(ON)
DS(ON)
= 0.012 Ω @ V
= 0.016 Ω @ V
• Low gate charge (17nC typical).
= 10 V
GS
= 4.5 V.
GS
• Fast switching speed.
Applications
• DC/DC converter
• High performance trench technology for extremely
low R
DS(ON)
.
• Motor drives
D
D
G
G
S
TO-252
T
=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
Drain Current - Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
A
TA = 25oC
Note 1
(Note 1)
(Note 1a)
(Note 1b)
S
20 V
±
46
12
50
2.8
1.3
A
W
C
°
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
2.5
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6690A FDD6690A 13’’ 16mm 2500
1999 Fairchild Semiconductor Corporation
C/W
°
C/W
°
FDD6690A, Rev. B2
Page 2
FDD6690A
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Cu rrent 46 A
Off Characteristics
BV
∆
∆
I
DSS
I
GSSF
I
GSSR
BV
DSS
T
DSS
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate -Body Lea kage Current,
Forward
Gate -Body Lea kage Current,
Reverse
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
V
GS(th)
DS(on)
FS
T
J
Gate Threshold Vo ltage
Gate Threshold Vo ltage
Temperature Coefficient
Static Drain-Source
On-Resista n ce
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 12 A 44 S
Parameter Test Condi t i ons Min Typ Max Uni t s
(Note 2)
TA = 25°C unless otherwise noted
(Note 1)
VDD = 15 V, ID = 46 A 150 mJ
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to
D
30 V
25
25°C
VGS = 20V, VDS = 0 V 100 nA
VGS = -20 V, VDS = 0 V -100 nA
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to
D
11.63 V
-4
25°C
VGS = 10 V, ID = 12 A
V
= 10 V, ID = 12
GS
A,T
=125°C
J
= 4.5 V, ID =10 A
V
GS
.0009
.0015
.0120
0.012
0.019
0.016
mV/°C
A
µ
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance 1700 pF
Output Capacitance 340 pF
= 15 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
(Note 2)
Turn-On Delay Time 10 18 ns
Turn-On Rise Time 12 22 ns
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
GEN
= 6
Ω
Turn-Off Delay Time 35 56 ns
Turn-Off Fal l Time
Total Gate Charge 17 23 nC
Gate-Source Charge 5 nC
= 15 V, ID = 12 A,
V
DS
V
= 5 V,
GS
Gate -Drain Charge
Drain-Source Diode Characteristics and Maximum Rating s
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
θJA
R
θJC
Maximum Continuous Drain-Source Diode Forward Current 2.3 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
is guaranteed by design while R
is determined by the user's board design.
θCA
a) R
= 45oC/W when mounted
θJA
on a 1in2 pad of 2oz copper.
(Note 2)
b) R
= 96oC/W on a minimum
θJA
mounting pad.
140 pF
10 18 ns
6nC
0.72 1.3 V
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD6690A, Rev. B2
Page 3
T ypical Characteristics
FDD6690A
40
VGS = 10V
30
20
10
, DRAIN-SOURCE CURRENT (A)
D
I
0
00.511.522.53
6.0V
4.5V3.5V
3.0V
2.5V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
2.6
2.4
VGS = 3.0V
2.2
2
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 10203040
3.5V
4.0V
, DRAIN CURRENT (A)
I
D
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate V oltage.
1.8
ID = 12A
= 10V
V
GS
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.04
0.035
0.03
0.025
0.02
0.015
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
0.005
0
246810
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
TA = 25oC
5.0V
7.0V
10V
ID = 6 A
Figure 3. On-Resistance Variation
with Temperature.
40
VDS = 5V
35
30
25
20
15
, DRAIN CURRENT (A)
10
D
I
5
0
12345
TA = -55oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
25oC
125oC
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD6690A, Rev. B2
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Typical Characteristics (continued)
FDD6690A
10
ID = 12A
8
VDS = 5V
15V
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25 30 35
, GATE CHARGE (nC)
Q
g
Figure 7. Gate-Charge Characteristics.
100
1S
100ms
10ms
1ms
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
0.1
D
I
VGS = 10V
SINGLE PULSE
= 96oC/W
R
JA
θ
= 25oC
T
A
10S
DC
0.01
0.01 0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
100µs
10V
2500
2000
C
ISS
f = 1MHz
V
= 0 V
GS
1500
1000
CAPACITANCE (pF)
500
0
C
OSS
C
RSS
0 5 10 15 20 25 30
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure 8. Capacitance Characteristics.
60
SINGLE PULSE
= 96oC/W
R
JA
θ
= 25oC
T
40
POWER (W)
20
0
0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
A
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
0.001
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.0001
0.0001 0.001 0.01 0.1 1 10 100 300
0.1
0.05
0.01
0.02
Single Pulse
t , TIME (sec)
1
R (t) = r(t) * R
JA
θ
96°C/W
R =
JA
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t / t
JA
θ
JA
θ
2
1
Figure 11. T ransient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDD6690A, Rev. B2
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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