Datasheet FDD6688, FDU6688 Datasheet (Fairchild)

Page 1

FDD6688/FDU6688

30V N-Channel PowerTrench MOSFET

June 2004

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Applications

• DC/DC converter

• Motor Drives

D-PAK

TO-252

(TO-252)

G D S

Absolute Maximum Ratings T

Symbo

Parameter Ratings Units

(TO-251AA)

=25oC unless otherwise noted

DSS

GSS

TJ, T

Drain-Source Voltage 30 V Gate-Source Voltage Drain Current – Continuous (Note 3) 84 A

– Pulsed (Note 1a) 100

Power Dissipation for Single Operation (Note 1) 83

Operating and Storage Junction Temperature Range –55 to +175

STG

I-PAK

(Note 1a)

(Note 1b)

Features

• 84 A, 30 V. R R

• Low gate charge

• Fast switching

• High performance trench technology for extremely

low R

DS(ON)

= 5 mΩ @ VGS = 10 V

DS(ON)

= 6 mΩ @ VGS = 4.5 V

DS(ON)

±20

3.8

1.6

°C

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

2004 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case (Note 1) 1.8 Thermal Resistance, Junction-to-Ambient (Note 1a) 40

(Note 1b)

FDD6688 FDD6688 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6688 FDU6688 I-PAK (TO-251) Tube N/A 75

FDD6688/FDU6688 Rev F(W)

°C/W

Page 2

Electrical Characteristics T

FDD6688/FDU6688

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)

DSS

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A 370 mJ Drain-Source Avalanche Current 21 A

Off Characteristics

DSS

∆BVDSS ∆T

DSS

GSS

Drain–Source Breakdown

VGS = 0 V, ID = 250 µA

Voltage Breakdown Voltage Temperature

ID = 250 µA, Referenced to 25°C

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

Gate–Body Leakage

VGS = ±20 V, VDS = 0 V ±100

30 V

mV/°C

µA nA

On Characteristics (Note 2)

GS(th)

∆VGS(th) ∆T

DS(on)

D(on)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source On–Resistance

VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16.5 A

1 1.8 3 V

VGS = 10 V, ID = 18 A, TJ=125°C On–State Drain Current VGS = 10 V, VDS = 5 V 50 A Forward Transconductance VDS = 5 V, ID = 18 A 88 S

–5

mV/°C

5 5 6

mΩ

Dynamic Characteristics

iss

oss

rss

Input Capacitance 3845 pF Output Capacitance 930 pF

Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.2

VDS = 15 V, V f = 1.0 MHz

= 0 V,

368 pF

Ω

Switching Characteristics (Note 2)

d(on)

d(off)

Q Q Q

Turn–On Delay Time 15 27 ns Turn–On Rise Time 13 23 ns Turn–Off Delay Time 62 99 ns Turn–Off Fall Time

Total Gate Charge 37 56 nC Gate–Source Charge 10 nC Gate–Drain Charge

VDD = 15 V, ID = 1 A, VGS = 10 V, R

GEN

= 6 Ω

VDS = 15V, ID = 18 A, VGS = 5 V

36 58 ns

14 nC

FDD6688/FDU6688 Rev F(W)

Page 3

Electrical Characteristics (continued) T

FDD6688/FDU6688

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings

Notes:8

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

Drain–Source Diode Forward

VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 V

Voltage Diode Reverse Recovery Time 39 nS

Diode Reverse Recovery Charge

is guaranteed by design while R

θJC

θCA

a) R

θJA

1in2 pad of 2 oz copper

DS(ON)

IF = 18 A ,diF/dt = 100 A/µs

is determined by the user's board design.

= 40°C/W when mounted on a

is at T

DS(on)

and VGS = 10V. Package current limitation is 21A

J(max)

31 nC

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

FDD6688/FDU6688 Rev F(W)

Page 4

Typical Characteristics

6.0V

FDD6688/FDU6688

100

VGS = 10V

4.5V

, DRAIN CURRENT (A)

0 0.5 1 1.5 2 2.5

4.0V

3.5V

VDS, DRAIN-SOURCE VOLTAGE (V)

3.0V

1.8

VGS = 3.5V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

0.8 0 20 40 60 80 100

4.0V

4.5V

5.0V

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID =18A

1.6 VGS = 10V

1.4

1.2

, NORMALIZED

DS(ON)

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

0.012

0.01

0.008

0.006

, ON-RESISTANCE (OHM)

TA = 25oC

0.004

DS(ON)

0.002 2 4 6 8 10

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

10V

ID = 9 A

Figure 3. On-Resistance Variation with

, DRAIN CURRENT (A)

Figure 4. On-Resistance Variation with

Temperature.

VDS = 5V

TA = 125oC

25oC

-55oC

1.5 2 2.5 3 3.5

VGS, GATE TO SOURCE VOLTAGE (V)

100

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

0.0001

Gate-to-Source Voltage.

VGS = 0V

TA = 125oC

25oC

-55oC

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6688/FDU6688 Rev F(W)

Page 5

Typical Characteristics

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

0.02

0.05

0.1

0.2

FDD6688/FDU6688

ID =18A

, GATE-SOURCE VOLTAGE (V)

0 20 40 60 80

Qg, GATE CHARGE (nC)

VDS = 10V

15V

20V

5000

4000

3000

2000

CAPACITANCE (pF)

1000

0 5 10 15 20 25 30

OSS

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000

100

LIMIT

DS(ON)

VGS = 10V

, DRAIN CURRENT (A)

SINGLE PULSE

= 96oC/W

0.1

0.01

TC = 25oC

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

10ms

100ms

1ms

100µs

100

P(pk), PEAK TRANSIENT POWER (W)

0.01 0.1 1 10 100 1000

t1, TIME (sec)

f = 1MHz

VGS = 0 V

SINGLE PULSE

= 96°C/W

TC = 25°C

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

THERMAL RESISTANCE

0.0001

Power Dissipation

0.1

0.01

0.001

D = 0.5

SINGLE PULSE

t) = r(t) * R

= 96 °C/W

θJA

P(pk)

TJ - TA = P * R

Duty Cycle, D = t1 / t

θJA

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6688/FDU6688 Rev F(W)

(t)

Page 6

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



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

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I11