Datasheet FDD6685 Datasheet (Fairchild)

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Page 1

May 2011

FDD

6685

FDD6685

30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Features

• –40 A, –30 V. R R

• Fast switching speed

• High performance trench technology for extremely

low R

• High power and current handling capability

• Qualified to AEC Q101

DS(ON)

= 20 mΩ @ VGS = –10 V

DS(ON)

= 30 mΩ @ VGS = –4.5 V

DS(ON)

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

Drain-Source Voltage

DSS

Gate-Source Voltage

GSS

TJ, T

STG

Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed, PW ≤ 100µs (Note 1b)

Power Dissipation for Single Operation (Note 1) 52 (Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

–30

±25

–40 –11

–100

3.8

1.6

–55 to +175

°C

V V

Thermal Characteristics

θJC

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

2011 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case (Note 1) 2.9 Thermal Resistance, Junction-to-Ambient (Note 1a) 40 Thermal Resistance, Junction-to-Ambient (Note 1b) 96

For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

°C/W °C/W °C/W

FDD6685 Rev D1

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FDD

6685

FDD

6685

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDD6685 FDD6685 13” 12mm 2500 units

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 4)

EAS Single Pulse Drain-Source

Avalanche Energy

IAS Maximum Drain-Source

Avalanche Current

ID = –11 A 42 mJ –11 A

Off Characteristics

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆TJ

Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1

DSS

Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA

GSS

Breakdown Voltage Temperature Coefficient

VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C

–30 V

–24

mV/°C

µA

On Characteristics (Note 2)

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

DS(on)

On–State Drain Current VGS = –10 V, VDS = –5 V –20 A

D(on)

gFS Forward Transconductance VDS = –5 V, ID = –11 A 26 S

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C

VGS = –10 V, ID = –11 A VGS = –4.5 V, ID = –9 A VGS = –10 V,ID = –11 A,TJ=125°C

–1 –1.8 –3 V

21 20

20 30

mV/°C

mΩ

Dynamic Characteristics

Input Capacitance 1715 pF

iss

Output Capacitance 440 pF

oss

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.6

VDS = –15 V, V f = 1.0 MHz

= 0 V,

225 pF

Ω

Switching Characteristics (Note 2)

Turn–On Delay Time 17 31 ns

d(on)

tr Turn–On Rise Time 11 21 ns t

Turn–Off Delay Time 43 68 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge 9 nC Qgd Gate–Drain Charge

VDD = –15 V, ID = –1 A, VGS = –10 V, R

VDS = –15V, ID = –11 A, VGS = –5 V

GEN

= 6 Ω

21 34 ns

4 nC

Drain–Source Diode Characteristics and Maximum Ratings

VSD Drain–Source Diode Forward

Trr Qrr

Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge

VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V

IF = –11 A, diF/dt = 100 A/µs

26 ns 13 nC

FDD6685 Rev D1

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FDD6685

Electrical Characteristics T

= 25°C unless otherwise noted

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and R

4. Starting TJ = 25°C, L = 0.69mH, IAS = –11A

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) R

= 40°C/W when mounted on a

θJA

1in2 pad of 2 oz copper

)ON(DS

b) R

θJA

on a minimum pad.

is at T

DS(on)

= 96°C/W when mounted

and VGS = 10V.

J(max)

FDD6685 Rev D1

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FDD

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Typical Characteristics

VGS = -10V

-6.0V -5.0V

, DRAIN CURRENT (A)

-I

0 1 2 3

-4.5V

-4.0V

-3.5V

-VDS, DRAIN-SOURCE VOLTAGE (V)

-3.0V

2.4

VGS = -3.5V

2.2

1.8

1.6

1.4

NORMALIZED

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8

-4.0V

-4.5V

-5.0V

-6.0V

-8.0V

0 2 4 6 8 10

-ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 ID = -11.0A VGS = -10V

1.4

1.2

NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation with

Temperature.

0.08

0.06

0.04

, ON-RESISTANCE (OHM)

0.02

DS(ON)

Figure 4. On-Resistance Variation with

TA = 125oC

TA = 25oC

2 4 6 8 10

-VGS, GATE TO SOURCE VOLTAGE (V)

Gate-to-Source Voltage.

-10V

ID = -5.5A

VDS = -5V

, DRAIN CURRENT (A)

-I

1 2 3 4 5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

25oC

125oC

100

VGS = 0V

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

with Source Current and Temperature.

TA = 125oC

25oC

-55oC

-VSD, BODY DIODE FORWARD VOLTAGE (V)

FDD6685 Rev D1

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FDD

6685

Typical Characteristics

ID = -11.0 A

, GATE-SOURCE VOLTAGE (V)

-V

0 5 10 15 20 25 30

VDS = 10V

20V

Qg, GATE CHARGE (nC)

30V

2400

1800

1200

CAPACITANCE (pF)

iss

600

rss

0 5 10 15 20 25 30

oss

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

100

LIMIT

, DRAIN CURRENT (A)

0.1

0.01

DS(ON)

10s DC

VGS = 10V

SINGLE PULSE

= 96oC/W

θJA

TA = 25oC

0.01 0.10 1.00 10.00 100.00

VDS, DRAIN-SOURCE VOLTAGE (V)

10ms

100ms

1ms

100µs

100

P(pk), PEAK TRANSIENT POWER (W)

0.01 0.1 1 10 100 1000

t1, TIME (sec)

SINGLE PULSE

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

= 96°C/W

θJA

TA = 25°C

f = 1MHz VGS = 0 V

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

(t) = r(t) * R

qJA

= 96 °C/W

qJA

P(pk)

TJ- TA= P * R

Duty Cycle, D = t1 / t

qJA

(t)

qJA

FDD6685 Rev D1

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TRADEMARKS

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

® ®

FPS™ F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:

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application, and increased cost of production and manufacturing delays. Fairchild is taking stron g measures to protect ourselves and our customers from th e proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either di rectly from Fairchild o r from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceabilit y, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for part s bo ught from Unauthorized Sources. Fairchild is

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconduct or reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fai r child Semiconductor. The datashe et is for reference information only.

Rev. I54