Datasheet FDD6682, FDU6682 Datasheet (Fairchild)

Page 1

FDD6682/FDU6682

30V N-Channel PowerTrench MOSFET

June 2004

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R

DS( ON) and fast switching speed.

Features

• 75 A, 30 V R R

• Low gate charge

• Fast switching

= 6.2 mΩ @ VGS = 10 V

DS(ON)

= 8.0 mΩ @ VGS = 4.5 V

DS(ON)

Applications

• DC/DC converter

• Motor Drives

• High performance trench technology for extremely

low R

DS(ON)

D-PAK

TO-252

(TO-252)

G D S

Absolute Maximum Ratings T

I-PAK

(TO-251AA)

=25oC unless otherwise noted

Symbol Parameter Ratings Units

DSS

GSS

TJ, T

STG

Drain-Source Voltage 30 V Gate-Source Voltage Drain Current – Continuous (Note 3) 75 A

– Pulsed (Note 1a) 100

Power Dissipation for Single Operation (Note 1) 71

(Note 1a)

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +175

±20

3.8

1.6

°C

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

2004 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case (Note 1) 2.1 Thermal Resistance, Junction-to-Ambient (Note 1a) 40 Thermal Resistance, Junction-to-Ambient (Note 1b) 96

FDD6682 FDD6682 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6682 FDU6682 I-PAK (TO-251) Tube N/A 75

FDD6682/FDU6682 Rev H(W)

°C/W

Page 2

Electrical Characteristics T

FDD6682/FDU6682

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)

DSS

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A 240 mJ Drain-Source Avalanche Current 17 A

Off Characteristics

DSS

∆BVDSS ∆T

DSS

GSS

Drain–Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

= 250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 Gate–Body Leakage

= ±20 V, VDS = 0 V ±100

30 V

mV/°C

µA

On Characteristics (Note 2)

GS(th)

∆VGS(th) ∆T

DS(on)

D(on)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

= 250 µA, Referenced to 25°C

VGS = 10 V, ID = 17 A V

= 4.5 V, ID = 15 A

= 10 V, ID = 17 A, TJ=125°C

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A Forward Transconductance VDS = 5 V, ID = 17 A 65 S

1 1.9 3 V

–7

5.2

6.4

8.0

6.2

11.9

mV/°C

mΩ

Dynamic Characteristics

iss

oss

rss

Input Capacitance 2400 pF Output Capacitance 577 pF Reverse Transfer Capacitance

= 15 V, V

f = 1.0 MHz

= 0 V,

258 pF

Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4

Ω

Switching Characteristics (Note 2)

d(on)

d(off)

Turn–On Delay Time 14 20 ns Turn–On Rise Time 12 37 ns Turn–Off Delay Time 38 64 ns Turn–Off Fall Time

= 15 V, ID = 1 A,

= 10 V, R

GEN

= 6 Ω

18 32 ns

Total Gate Charge 24 31 nC

= 15V, ID = 17 A,

Gate–Source Charge 6.5 nC Gate–Drain Charge

DS GS

= 5 V

8.1 nC

FDD6682/FDU6682 Rev H(W)

Page 3

Electrical Characteristics (continued) T

FDD6682/FDU6682

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings

Notes:

1. R

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

Maximum Continuous Drain–Source Diode Forward Current 3.2 A Drain–Source Diode Forward

VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 V Voltage Diode Reverse Recovery Time IF = 17 A, diF/dt = 100 A/µs 32 nS

Diode Reverse Recovery Charge 20 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) R

= 40°C/W when mounted on a

θJA

1in2 pad of 2 oz copper

DS(ON)

is at T

DS(on)

J(max)

b) R

θJA

on a minimum pad.

and VGS = 10V. Package current limitation is 21A

= 96°C/W when mounted

FDD6682/FDU6682 Rev H(W)

Page 4

Typical Characteristics

DRAIN-SOURCE ON-RESISTANCE

FDD6682/FDU6682

100

VGS=10V

6.0V

, DRAIN CURRENT (A)

0 1 2 3

4.0V

4.5V

, DRAIN-SOURCE VOLTAGE (V)

3.5V

3.0V

VGS = 3.5V

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

0.8 0 20 40 60 80 100

4.0V

4.5V

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

ID = 17A

1.8

= 10V

1.6

1.4

1.2

, NORMALIZED

DS(ON)

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

0.02

0.015

0.01

TA = 25oC

, ON-RESISTANCE (OHM)

0.005

DS(ON)

2 4 6 8 10

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

5.0V

10V

ID = 8.5A

Figure 3. On-Resistance Variation with

, DRAIN CURRENT (A)

Figure 4. On-Resistance Variation with

Temperature.

VDS = 5V

TA =125oC

1 2 3 4

, GATE TO SOURCE VOLTAGE (V)

25oC

-55oC

100

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

0.0001

Gate-to-Source Voltage.

VGS = 0V

TA = 125oC

25oC

-55oC

0 0.2 0.4 0.6 0.8 1 1.2

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6682/FDU6682 Rev H(W)

Page 5

Typical Characteristics

, GATE-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.02

0.05

FDD6682/FDU6682

ID = 17A

0 10 20 30 40 50

, GATE CHARGE (nC)

VDS = 10V

20V

15V

3500

3000

2500

2000

1500

CAPACITANCE (pF)

1000

ISS

OSS

RSS

500

0 5 10 15 20 25 30

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000

100

LIMIT

DS(ON)

VGS = 10V

SINGLE PULSE

0.1

= 96oC/W

θJA

= 25oC

0.01

0.01 0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

10s

100ms

10ms

100µs

1ms

100

P(pk), PEAK TRANSIENT POWER (W)

0.01 0.1 1 10 100 1000

, TIME (sec)

f = 1MHz

SINGLE PULSE

= 96°C/W

= 25°C

= 0 V

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

THERMAL RESISTANCE

Power Dissipation

D = 0.5

(t) = r(t) * R

θJA

= 96 °C/W

0.1

0.2

0.1

P(pk)

- TA = P * R

Duty Cycle, D = t

θJA

0.01

SINGLE PULSE

0.001

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6682/FDU6682 Rev H(W)

(t)

/ t

Page 6

TRADEMARKS

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FPS™

CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

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CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



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

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PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I11