Datasheet FDD6676 Datasheet (Fairchild Semiconductor)

FDD6676

30V N-Channel PowerTrench



MOSFET

FDD6676

April 2001

General Description

This N-Channel MOSFET has been designed specifically to i mprove the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R extremely low R

DS( ON) and fast switching speed.

in a small package.

DS(ON)

Features

• 78 A, 30 V R R

• Low gate charge

• Fast Switching

= 7.5 mΩ @ VGS = 10 V

DS(ON)

= 8.5 mΩ @ VGS = 4.5 V

DS(ON)

Applications

• DC/DC converter

• Motor Drives

• High performance trench te chnology for extremely

low R

DS(ON)

D

G

S

TO-252

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

G

S

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

±16 ID Drain Current – Continuous (Note 3) 78 A – Pulsed (Note 1a) 100 PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1) 83 (Note 1a)

(Note 1b)

3.8

1.6

Operating and Storage Junction Temperature Range -55 to +175

V

W

°C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

(Note 1) 1.8 (Note 1a) 40 (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD6676 FDD6676 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W °C/W °C/W

FDD6676 Rev C(W)

FDD6676

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)

W

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=21A 370 mJ

DSS

IAR Drain-Source Avalanche Current 21 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current V

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

= 250 µA,Referenced to 25°C

I

D

= 24 V, VGS = 0 V 1

DS

30 V

24

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A

D(on)

= VGS, ID = 250 µA

V

DS

= 250 µA,Referenced to 25°C

I

D

VGS = 10 V, ID = 16.8 A

= 4.5 V, ID = 15.8 A

V

GS

= 10 V, ID = 16.8 A,TJ=125°C

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 16.8 A 80 S

1 1.5 3 V

-5

4.8

5.4

7.3

7.5

8.5

10.5

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 5103 pF

iss

C

Output Capacitance 836 pF

oss

C

Reverse Transfer Capacitance

rss

V

= 15 V, V

DS

f = 1.0 MHz

= 0 V,

GS

361 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 15 27 ns

d(on)

tr Turn–On Rise Time 9 18 ns t

Turn–Off Delay Time 87 139 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 45 63 nC Qgs Gate–Source Charge 13 nC Qgd Gate–Drain Charge

V

= 15 V, ID = 1 A,

DD

V

= 10 V, R

GS

= 15V, ID = 16.8 A,

V

DS

= 5 V

V

GS

GEN

= 6 Ω

40 64 ns

12 nC

FDD6676 Rev. C(W)

FDD6676

Electrical Characteristics (continued) T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Di ode Forward Current 3.2 A VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

is guaranteed by design while R

θJC

θCA

a) R

θJA

1in2 pad of 2 oz copper

P

D

R

DS(ON)

VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 V

is determined by the user's board design.

= 40°C/W when mounted on a

is at T

DS(on)

and VGS = 10V. Package current limitation is 21A

J(max)

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

FDD6676 Rev. C(W)

)

E

)

Typical Characteristics

FDD6676

50

VGS = 10V

4.5V

40

30

20

, DRAIN CURRENT (A

D

I

10

0

00.511.5

3.5V

3.0V

2.5V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

1.8

1.6 VGS = 3.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANC

0.8

0 1020304050

3.5V

4.0V

I

, DRAIN CURRENT ( A)

D

4.5V

6.0V

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.8 ID = 16.8A

1.6

V

= 10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.02

0.015

0.01

, ON-RESISTANCE (OHM)

0.005

DS(ON)

R

TA = 25oC

0

246810

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

10V

ID = 8.4 A

Figure 3. On-Resistance Variation

withTemperature

50

VDS = 5.0V

40

30

20

, DRAIN CURRENT (A

D

I

10

0

11.522.533.5

TA = 125oC

25oC

-55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001

00.20.40.60.811.2

TA = 125oC

25oC

V

BODY DIODE FORWARD VOLTAGE (V)

SD,

-55oC

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6676 Rev. C(W)

)

Typical Characteristics

FDD6676

10

ID = 16.8A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 102030405060708090

, GATE CHARGE (nC)

Q

g

VDS = 5.0V

15V

10V

7000

6000

5000

4000

3000

2000

CAPACITANCE (pF

1000

0

0 5 10 15 20 25 30

V

C

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000

100

R

LIMIT

DS(ON)

10s

100ms

1s

10

1

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A

D

I

0.01

= 96oC/W

R

0.1

θ

JA

T

= 25oC

A

0.1 1 10 100

DC

, DRAIN-SOURCE VOLTAGE (V)

V

DS

10ms

100µs

1ms

50

SINGLE PULSE

R

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

, TIME (sec)

t

1

θ

f = 1 MHz V

GS

= 96°C/W

JA

= 25°C

T

A

= 0 V

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

Power Dissipation

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

r(t), NORMALIZED EFFECTIVE

0.01

0.001

TRANSIENT THERMAL RESISTANCE

0.1

R

(t) = r(t) + R

θ

JA

R

= 96oC/W

θ

JA

P(pk

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

θ

JA

(t)

θ

JA

/ t

1

2

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6676 Rev. C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOL T™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™



FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™

PACMAN™ POP™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART ST ART™ St ar* Power™ Stealth™



SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H1