Datasheet FDU6644, FDD6644 Datasheet (Fairchild Semiconductor)

FDD6644/FDU6644

30V N-Channel PowerTrench



MOSFET

FDD6644/FDU6644

April 2001

General Description

This N-Channel MOSFET has been designed specifically to i mprove the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM c ontrollers. It has been optimized for low gate charge, low R

and fast switching speed.

DS(ON)

Features

• 67 A, 30 V. R R

• High performance trench te chnology for extremely

low R

DS(ON)

= 8.5 mΩ @ VGS = 10 V

DS(ON)

= 10.5 mΩ @ VGS = 4.5 V

DS(ON)

Applications

• DC/DC converter

• Low gate charge (25 nC typical)

• High power and current handling capability

D

G

S

D-PAK

TO-252

(TO-252)

G DS

Absolute Maximum Ratings T

I-PAK

(TO-251AA)

o

=25

C unless otherwise noted

A

G

S

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 67 A – Pulsed 100

PD

TJ, T

STG

Maximum Power Dissipation (Note 1) 68 (Note 1a)

Operating and Storage Junction Temperature Range -55 to +175

(Note 1b)

±16

3.8

1.6

V

W

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

(Note 1) 2.2

(Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

FDD6644 FDD6644 D-PAK (TO-252) 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

FDU6644 FDU6644 I-PAK (TO-251) Tube N/A 75

°C/W °C/W

FDD/FDU6644 Rev C(W)

FDD6644/FDU6644

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=17A 240 mJ

DSS

IAR Drain-Source Avalanche Current 17 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

30 V

27

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–S t ate Drain Current VGS = 10 V, VDS = 5 V 50 A

D(on)

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 16 A

= 4.5 V, ID = 15 A

V

GS

= 10 V, ID = 16.5A,TJ=125°C

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 16 A 74 S

1 1.5 3 V

–5

6.5

7.5 10

8.5

10.5 13

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 3087 pF

iss

C

Output Capacitance 489 pF

oss

C

Reverse Transfer Capacitance

rss

= 15 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

185 pF

Switching Characteristics (Note 2)

V

t

Turn–On Delay Time 10 20 ns

d(on)

tr Turn–On Rise Time 12 22 ns t

Turn–Off Delay Time 48 77 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 25 35 nC Qgs Gate–Source Charge 7.5 Qgd Gate–Drain Charge

= 15 V, ID = 1 A,

DD

= 10 V, R

V

GS

V

= 15 V, ID = 16 A,

DS

= 5 V

V

GS

GEN

= 6 Ω

10 20 ns

6.5

FDD/FDU6644 Rev C(W)

FDD6644/FDU6644

Electrical Characteristics (continued) T

= 25°C unless otherwise noted

A

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A VSD

Notes:

1. R

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

Drain–Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

θCA

a) R

θJA

1in2 pad of 2 oz copper

P

D

R

DS(ON)

VGS = 0 V, IS = 2.7 A (Note 2) 0.7 1.2 V

is determined by the user's board design.

= 40°C/W when mounted on a

is at T

DS(on)

and VGS = 10V. Package current limitation is 21A

J(max)

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

FDD/FDU6644 Rev C(W)

)

E

)

FDD6644/FDU6644

Typical Characteristics

50

VGS = 10V

6.0V

40

30

20

, DRAIN CURRENT (A

D

I

10

0

00.511.5

3.5V

3.0V

4.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

2.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

1.8 ID = 16A

1.6

V

= 10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

2

1.75 VGS = 3.0V

1.5

, NORMALIZED

1.25

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.75

0 1020304050

3.5V

4.0V

I

, DRAIN CURRENT (A)

D

4.5V

Drain Current and Gate Voltage.

0.024

0.02

0.016

0.012

, ON-RESISTANCE (OHM)

0.008

DS(ON)

R

0.004

TA = 25oC

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

6.0V 10V

ID = 8 A

Figure 3. On-Resistance Variation with

Temperature.

70

VDS = 5V

60

50

40

30

20

, DRAIN CURRENT (A

D

I

10

0

1.5 2 2.5 3 3.5

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD/FDU6644 Rev C(W)

)

Typical Characteristics

10

ID = 16A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 1020304050

, GATE CHARGE (nC)

Q

g

VDS = 5V

10V

15V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

4000

3500 3000

2500 2000 1500

CAPACITANCE (pF)

1000

500

0

0 5 10 15 20 25 30

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

C

ISS

f = 1MHz

V

= 0 V

GS

FDD6644/FDU6644

100

1ms

10s

1s

100ms

10ms

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

D

I

0.01

VGS = 10V

SINGLE PULSE

0.1 R

= 96oC/W

JA

θ

T

= 25oC

A

0.01 0.1 1 10 100

V

, DRAIN-SOURCE VOLT AG E (V)

DS

DC

100µs

80 70 60 50 40 30 20 10

P(pk), PEAK TRANSIENT POWER (W

0

0.1 1 10 100

t

, TIME (sec)

1

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

JA

θ

R

P(pk)

T

- TA = P * R

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIM E (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design.

SINGLE PULSE

R

(t) = r(t) + R

= 96 °C /W

JA

θ

t

1

t

2

= 96°C/W

θ

JA

= 25°C

T

A

JA

θ

JA

θ

(t) / t

1

2

FDD/FDU6644 Rev C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOL T™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™



FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™

PACMAN™ POP™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART ST ART™ St ar* Power™ Stealth™



SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H1