Datasheet FDD6296, FDU6296 Datasheet (Fairchild)

Page 1

FDD6296/FDU6296

30V N-Channel Fast Switching PowerTrench MOSFET

June 2004

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

• Power management

Features

• 50A, 30 V R R

• Low gate charge

• Fast switching

• High performance trench technology for extremely

low R

DS(ON)

= 8.8 mΩ @ VGS = 10 V

DS(ON)

= 11.3 mΩ @ VGS = 4.5 V

DS(ON)

D-PAK

TO-252

(TO-252)

G D S

Absolute Maximum Ratings T

I-PAK

(TO-251AA)

=25oC unless otherwise noted

Symbol Parameter Ratings Units

DSS

GSS

TJ, T

STG

Drain-Source Voltage 30 V Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) 50 A

@TA=25°C (Note 1a) 15 Pulsed (Note 1a) 100

Power Dissipation @TC=25°C (Note 3) 52

@TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) 1.6

Operating and Storage Junction Temperature Range –55 to +175

± 20

°C

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

2004 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case (Note 1) 2.9 Thermal Resistance, Junction-to-Ambient (Note 1a) 40 Thermal Resistance, Junction-to-Ambient (Note 1b) 96

FDD6296 FDD6296 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6296 FDU2696 I-PAK (TO-251) Tube N/A 75

FDD6296/FDU6296 Rev C(W)

°C/W

Page 2

Electrical Characteristics T

FDD6296/FDU6296

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A 165 mJ Drain-Source Avalanche Current 15 A

Off Characteristics

DSS

∆BVDSS ∆T

DSS

GSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C

30 V

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

Gate–Body Leakage

VGS =± 20 V, VDS = 0 V

100

mV/°C

µA

On Characteristics (Note 2)

GS(th)

∆VGS(th) ∆T

DS(on)

Gate Threshold Voltage Gate Threshold Voltage

VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C

1 1.7 3 V

–0.5

mV/°C

Temperature Coefficient Static Drain–Source

On–Resistance

VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A, TJ=125°C

7.5

9.0

9.3

8.8

11.3

15.0

mΩ

Forward Transconductance VDS = 5 V, ID = 15 A 58 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance 1440 pF Output Capacitance 400 pF

Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3

VDS = 15 V, V f = 1.0 MHz

= 0 V,

140 pF

Ω

Switching Characteristics (Note 2)

d(on)

d(off)

Q Q Q Q

Turn–On Delay Time 11 19 ns Turn–On Rise Time 6 11 ns Turn–Off Delay Time 29 46 ns Turn–Off Fall Time

Total Gate Charge VDS = 15V, ID = 15 A, VGS = 10 V 22.5 31.5 nC Total Gate Charge 12.2 17 nC Gate–Source Charge 4 nC Gate–Drain Charge

VDD = 15 V, ID = 1 A, VGS = 10 V, R

GEN

= 6 Ω

VDS = 15V, ID = 15 A, VGS = 5 V

13 23 ns

3.5 nC

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current 3.2 A Drain–Source Diode Forward

Voltage Diode Reverse Recovery Time 25 nS

Diode Reverse Recovery Charge

VGS = 0 V, IS = 3.2 A (Note 2) IF = 15 A,

diF/dt = 100 A/µs

0.74 1.2 V

13 nC

FDD6296/FDU6296 Rev. C(W)

Page 3

Electrical Characteristics (cont’d)

FDD6296/FDU6296

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) R

= 40°C/W when mounted on

θJA

a 1in2 pad of 2 oz copper

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Scale 1 : 1 on letter size paper

3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and R current limitation is 21A

DS(ON)

DS(on)

is at T

and VGS = 10V. Package

J(max)

FDD6296/FDU6296 Rev. C(W)

Page 4

Typical Characteristics

DRAIN-SOURCE ON-RESISTANCE

FDD6296/FDU6296

100

VGS=10V

, DRAIN CURRENT (A)

0 1 2 3 4

4.0V

4.5V6.0V

3.5V

3.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

1.8 VGS = 3.5V

1.6

1.4

1.2

RDS(ON), NORMALIZED

0.8

0 20 40 60 80 100

4.0V

4.5V

ID, DRAIN CURRENT (A)

5.0V

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.8 ID = 50A

1.6

VGS = 10V

1.4

1.2

RDS(ON), NORMALIZED

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

0.025

0.02

0.015

0.01

RDS(ON), ON-RESISTANCE (OHM)

TA = 25oC

0.005 2 4 6 8 10

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

6.0V 10V

ID = 25A

Figure 3. On-Resistance Variation with

, DRAIN CURRENT (A)

1.5 2 2.5 3 3.5 4

Figure 4. On-Resistance Variation with

VDS = 10V

Temperature

TA =125oC

-55oC

25oC

VGS, GATE TO SOURCE VOLTAGE (V)

1000

100

0.1

0.01

0.001

IS, REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

Gate-to-Source Voltage

VGS = 0V

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6296/FDU6296 Rev. C(W)

Page 5

Typical Characteristics

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.05

FDD6296/FDU6296

1800

ID = 15A

VDS = 10V

20V

15V

1200

600

CAPACITANCE (pF)

oss

rss

V GS , GATE-SOURCE VOLTAGE (V)

0 5 10 15 20 25

Qg, GATE CHARGE (nC)

0 5 10 15 20 25 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000

LIMIT

DS(ON)

100

VGS = 10V

SINGLE PULSE

ID , DRAIN CURRENT (A)

0.1

= 96oC/W

TA = 25oC

0.01

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

100ms

10ms

100µs

1ms

100

P(pk), PEAK TRANSIENT POWER (W)

0.01 0.1 1 10 100 1000

t1, TIME (sec)

iss

SINGLE PULSE

TA = 25°C

f = 1MHz VGS = 0 V

= 96°C/W

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

THERMAL RESISTANCE

Power Dissipation

0.1

D = 0.5

0.2

0.1

(t) = r(t) * R

θJA

= 96 °C/W

P(pk)

0.01

0.02

0.0

SINGLE PULSE

TJ - TA = P * R

Duty Cycle, D = t1 / t

θJA

0.001

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6296/FDU6296 Rev. C(W)

θJA

(t)

Page 6

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



FAST FASTr™

LittleFET™

FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™



ISOPLANAR™ MICROCOUPLER™

MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC



OPTOPLANAR™ P ACMAN™ POP™

Power247™ PowerSaver™ PowerTrench



QFET



QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART ST ART™ SPM™ Stealth™

SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET



VCX™



FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I11