Page 1
tm
FDD5N53/FDU5N53
D
G
S
G
S
D
D-PAK
FDD Series
I-PAK
FDU Series
G
D
S
N-Channel MOSFET
530V, 4A, 1.5Ω
FDD5N53 / FDU5N53 N-Channel MOSFET
January 2009
TM
UniFET
Features
•R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
DS(on)
( Typ. 5pF)
rss
o
= 25
C unless otherwise noted*
C
Symbol Parameter FDD5N53/FDU5N53 Units
Drain to Source Voltage 530 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 40 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 16 A
Single Pulsed Avalanche Energy (Note 2) 256 mJ
Avalanche Current (Note 1) 4 A
Repetitive Avalanche Energy (Note 1) 4 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
= 25oC) 4
C
= 100oC) 2.4
C
o
C0.3W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation
FDD5N53/FDU5N53 Rev. A
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 110
o
C/W
www.fairchildsemi.com1
Page 2
FDD5N53 / FDU5N53 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD5N53 FDD5N53TM D-PAK 380mm 16mm 2500
FDD5N53 FDD5N53TF D-PAK 380mm 16mm 2000
FDU5N53 FDU5N53TU I-PAK - - 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 530 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.6-V/
D
V
= 530V, V
DS
= 424V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.25 1.5 Ω
Forward Transconductance VDS = 40V, ID = 2A (Note 4) -4.3-S
Input Capacitance
Output Capacitance - 66 88 pF
Reverse Transfer Capacitance - 5 8 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 5A
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 480 640 pF
-1115nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 28 66 ns
Turn-Off Fall Time - 20 50 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, I
3: I
≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 4 A
Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.8 - μC
= 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 5A
V
DD
R
= 25Ω
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 4A - - 1.4 V
SD
= 5A
SD
-1336ns
- 300 - ns
FDD5N53/FDU5N53 Rev. A
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
0.1 1 10
0.1
1
10
30
0.04
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
20
45678
0.1
1
10
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
20
036912
1.0
1.5
2.0
2.5
3.0
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.40.81.21.6
1
10
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body D iode Forward V oltage [V]
25oC
70
0.1 1 10
0
250
500
750
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
30
04812
0
2
4
6
8
10
*Note: ID = 5A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te C harge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD5N53 / FDU5N53 N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD5N53/FDU5N53 Rev. A
3
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Page 4
Typical Performance Characteristics (Continued)
-75 -25 25 75 125 175
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-75 -25 25 75 125 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 2A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
110100
0.01
0.1
1
10
800
30
30μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
1
2
3
4
I
D
, Drain Current [A]
TC, Case Temperatur e [oC]
4.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 1.4oC/W Max.
2. Duty Fact or, D= t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
3
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FDD5N53 / FDU5N53 N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
FDD5N53/FDU5N53 Rev. A
4
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Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD5N53 / FDU5N53 N-Channel MOSFET
FDD5N53/FDU5N53 Rev. A
5
www.fairchildsemi.com
Page 6
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( D rive r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forw ard Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as DU T
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D rive r )
I
SD
( D U T )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forw ard Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
FDD5N53 / FDU5N53 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDD5N53/FDU5N53 Rev. A
6
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Page 7
Mechanical Dimensions
D-PAK
FDD5N53 / FDU5N53 N-Channel MOSFET
FDD5N53/FDU5N53 Rev. A
Dimensions in Millimeters
7
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Page 8
Mechanical Dimensions
I-PAK
FDD5N53 / FDU5N53 N-Channel MOSFET
FDD5N53/FDU5N53 Rev. A
Dimensions in Millimeters
www.fairchildsemi.com8
Page 9
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered tra demarks and service marks, owned by Fairchild Semico nductor and/or its glo bal subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
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Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
F-PFS™
* EZSWITCH™ and FlashWriter
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
®
®
®
®
®
*
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
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Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
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MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
PowerTrench
®
®
®
®
PowerXS™
SM
Programmable Active Droop™
®
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QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
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The Power Franchise
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TinyBoost™
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Ultra FRFET™
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®
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FDD5N53 / FDU5N53 N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing prob lem in the indust ry. All manufactur es of semiconductor product s are experiencin g counterfeiting of their
parts. Customers who inadvertently purchase count erfeit par ts experience many problems such as loss of brand reputation, substandard perfor mance, failed
application, and increased cost of production and man ufacturing delays. Fairchild is taking strong measures to protect ourselve s and our customers from the
proliferation of counterfeit parts. Farichild stro ngly encourage s customers t o purchase Farichild par ts either dire ctly from Fairchil d or from Authorized Fa irchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers t o do their part in st opping this practice by buying direct or from authorized distrib utors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDD5N53/FDU5N53 Rev. A
Datasheet contains the design specifications f or product development. S pecifications may
change in any manner without notice.
Datasheet contains preliminary data; sup plementary dat a will be pu blished at a lat er date.
Fairchild Semiconductor reserves the right to make ch anges at any time without notice to
improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
9
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Rev. I37
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