Datasheet fdd5n50f Datasheet

tm

FDD5N50F

N-Channel MOSFET, FRFET

500V, 3.5A, 1.55Ω

FDD5N50F N-Channel MOSFET, FRFET

December 2007

TM

UniFET

Features

•R

• Low gate charge ( Typ. 11nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

T

L

= 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A

DS(on)

( Typ. 5pF)

rss

G

S

D

D-PAK

= 25oC unless otherwise noted*

C

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

-Continuous (T

(T

= 25oC) 40 W

C

- Derate above 25

STG

Drain Current

Drain Current - Pulsed (Note 1) 14 A

Single Pulsed Avalanche Energy (Note 2) 257 mJ

Avalanche Current (Note 1) 3.5 A

Repetitive Avalanche Energy (Note 1) 4 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection.

D

G

S

= 25oC) 3.5

C

= 100oC) 2.1

C

o

C0.3W/

300

o

A

o

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.4

Thermal Resistance, Junction to Ambient 110

o

C/W

www.fairchildsemi.com1

FDD5N50F N-Channel MOSFET, FRFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDD5N50F FDD5N50FTM D-PAK 380mm 16mm 2500

FDD5N50F FDD5N50FTF D-PAK 380mm 16mm 2000

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.6-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 1.75A - 1.25 1.55 Ω

Forward Transconductance VDS = 20V, ID = 1.75A (Note 4) -4.3-S

Input Capacitance

Output Capacitance - 66 88 pF

Reverse Transfer Capacitance - 5 7.5 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V, ID = 5A

Gate to Source Gate Charge - 3 - nC

Gate to Drain “Miller” Charge - 5 - nC

DS

V

= 10V

GS

( Note 4 , 5)

- 490 650 pF

-1115nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 22 54 ns

Turn-Off Delay Time - 28 66 ns

Turn-Off Fall Time - 20 50 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 42mH, I

≤ 3.5A, di/dt ≤ 200A/µs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 3.5 A

Maximum Pulsed Drain to Source Diode Forward Current - - 14 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.120 - µC

= 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 250V, ID = 5A

V

DD

R

= 25Ω

G

(N ote 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 3.5A - - 1.5 V

SD

= 5A

SD

-1336ns

-65-ns

FDD5N50F Rev. A1

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

1

,Drain Current[A]

D

I

0.1

0.04

0.1 1 10

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

2.2

20

10

150oC

25oC

1

,Drain Current[A]

D

I

*Notes:

1. V

= 20V

DS

2. 250

0.1 45678

µs Pulse Test

VGS,Gate-Source Voltage[V]

50

FDD5N50F N-Channel MOSFET, FRFET

2.0

10

1.8

[Ω],

1.6

DS(ON)

R

VGS = 10V

VGS = 20V

150oC

25oC

1

1.4

Drain-Source On-Resistance

*Note: TJ = 25oC

1.2 0 4 8 12 16 20

ID, Drain Current [A]

, Reverse Drain Current [A]

S

I

0.2

0.00.40.81.21.6

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

750

500

Capacitances [pF]

250

0

0.1 1 10 VDS, Drain-Source Voltage [V]

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

C

iss

C

oss

C

rss

30

10

VDS = 100V V

= 250V

8

V

DS

= 400V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 5A

0

036912

Qg, Total Gate Charge [nC]

FDD5N50F Rev. A1

3

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area vs. Temperature

1.2

1.1

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -25 25 75 125 175

*Notes:

1. V

2. I

= 0V

GS

= 250µA

D

TJ, Junction Temperature [oC]

Figure 9. Maximum Drain Current

4

30

10

1ms

10ms

1

, Drain Current [A] I

Operation in This Area is Limited by R

D

0.1

0.01 1 10 100 1000

DS(on)

VDS, Drain-Source Voltage [V]

DC

*Notes:

1. T

= 25oC

C

2. T

= 150oC

J

3. Single Pulse

40µs

100µs

FDD5N50F N-Channel MOSFET, FRFET

3

2

, Drain Current [A]

D

I

1

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 10. Transient Thermal Response Curve

]

θJC

0.01

Thermal Response [Z

0.003

3

0.1

1

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

10

-4

10

-3

10

Rectangular Pulse Duration [sec]

P

DM

*Notes:

1. Z

(t) = 1.4oC/W Max.

θJC

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

-2

10

-1

10

0

10

t

1

t

2

1/t2

(t)

θJC

1

10

2

10

FDD5N50F Rev. A1

4

www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDD5N50F N-Channel MOSFET, FRFET

FDD5N50F Rev. A1

Unclamped Inductive Switching Test Circuit & Waveforms

5

www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

V

DS

_

L

LL

Sam e Type

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

Driver

G

DUT

I

SD

V

DD

FDD5N50F N-Channel MOSFET, FRFET

V

GS

( D riv e r )

I

SD

( D U T )

V

DS

( DUT )

G ate Pulse W idth

--------------------------

D =

Gate Pulse Period

IFM, B ody D iode Forw ard Current

I

RM

Body D iode R everse C urrent

Body D iode R ecovery dv/dt

V

SD

Body D iode

Forw ard Volta

e D ro

di/dt

10V

V

DD

FDD5N50F Rev. A1

6

www.fairchildsemi.com

Mechanical Dimensions

FDD5N50F N-Channel MOSFET, FRFET

D-PAK

FDD5N50F Rev. A1

Dimensions in Millimeters

7

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

®

ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

®

EfficentMax™ EZSWITCH™ *

™

®

Fairchild Fairchild Semiconduct or FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter

®

® *

®

* EZSWITCH™ and FlashWriter

FPS™ F-PFS™

®

FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

are trademarks of System General Corporation, used under lic ens e by Fairchild Semiconduct or.

PDP SPM™ Power-SPM™ PowerTrench Programmable Active Droop™ QFET

®

QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™

UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PR ODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT O F THE APPLICATION OR USE OF AN Y PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIG HTS OF OTH ERS. THESE SPECIFICATIO NS DO N OT EXPAN D THE TERM S OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFIC ALLY THE WARRANTY THER EIN, WHICH COVERS TH ESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical im plant into the body or (b) support or sustain lif e, and (c) whose failure to perform when properly used in accordance with instructi ons for use

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the fail ure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in a signific ant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Des i gn

This datasheet contains the design specificati ons for product development. Specifications may change in any manner without notic e.

This datasheet contains prelim inary data; supplementary data will be published

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

at a later date. Fairchild S emiconductor reserves the right to make changes at any time without notice t o i mprove design.

This datasheet contains f i nal specifications. Fairchild Semiconductor reserves the right to make changes at any time without notic e to improve the design.

This datasheet contains specifications on a product that is discontinued by Fairchild Semiconduc tor. The datasheet is for referenc e i nformation only.

Rev. I34