Datasheet FDD5N50 Datasheet (Fairchild)

tm

FDD5N50

N-Channel MOSFET

500V, 4A, 1.4Ω

FDD5N50 N-Channel MOSFET

December 2007

TM

UniFET

Features

•R

• Low gate charge ( Typ. 11nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P

D

, T

T

J

T

L

= 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A

DS(on)

( Typ. 5pF)

rss

G

S

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V

Drain Current
Drain Current - Pulsed (Note 1) 16 A

Single Pulsed Avalanche Energy (Note 2) 256 mJ
Avalanche Current (Note 1) 4 A
Repetitive Avalanche Energy (Note 1) 4 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

D-PAK

D

o

= 25

C unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 40 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.

D

G

S

= 25oC) 4

C

= 100oC) 2.4

C

o

C0.3W/

300

o

o

A

o

C

C
C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2007 Fairchild Semiconductor Corporation
FDD5N50 Rev. A

Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 110

o

C/W

www.fairchildsemi.com1

FDD5N50 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDD5N50 FDD5N50TM D-PAK 380mm 16mm 2500
FDD5N50 FDD5N50TF D-PAK 380mm 16mm 2000

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.6-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.15 1.4 Ω
Forward Transconductance VDS = 20V, ID = 2A (Note 4) -4.3-S

Input Capacitance
Output Capacitance - 66 88 pF
Reverse Transfer Capacitance - 5 8 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V, ID = 5A

Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 480 640 pF

-1115nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 28 66 ns
Turn-Off Fall Time - 20 50 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, I

≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 4 A
Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.8 - µC

= 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 250V, ID = 5A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 4A - - 1.4 V

SD

= 5A

SD

-1336ns

- 300 - ns

FDD5N50 Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

20

V

= 15.0V

GS

10.0V

10

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

1

,Drain Current[A]

D

I

0.1

0.04

0.1 1 10

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

30

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

3.0

20

10

150oC

25oC

1

,Drain Current[A]

D

I

0.1
45678

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS,Gate-Source Voltage[V]

70

FDD5N50 N-Channel MOSFET

2.5

150oC

[Ω],

2.0

DS(ON)

R

1.5

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

1.0
036912

*Note: TJ = 25oC

ID, Drain Current [A]

10

25oC

, Reverse Drain Current [A]

S

I

1

0.40.81.21.6

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

VSD, Body D iode Forward V oltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

750

500

Capacitances [pF]

250

0

0.1 1 10
VDS, Drain-Source Voltage [V ]

gd

gd

*Note:

1. V

= 0V

GS

2. f = 1MH z

C

iss

C

oss

C

rss

30

10

VDS = 100V
V

= 250V

DS

= 400V

V

8

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

04812

*Note: ID = 5A

Qg, Total Ga te C harge [nC]

FDD5N50 Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDD5N50 N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -25 25 75 125 175
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

= 0V

GS

= 250µA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-75 -25 25 75 125 175
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

GS

= 2A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

30

10

1ms

1

, Drain Current [A]
I

Operation in This Area
is Limited by R

D

0.1

0.01
110100

DS(on)

*Notes:

1. T

C

2. T

= 150oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

30µs

100µs

10ms

DC

= 25oC

800

4.5
4

3

2

, Drain Current [A]

D

I

1

0

25 50 75 100 125 150

TC, Case Temperatur e [oC]

Figure 11. Transient Thermal Response Curve

3

FDD5N50 Rev. A

]

Thermal Response [Z

θJC

0.1

0.01

1

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

10

P

DM

t

1

t

2

*Notes:

1. Z

(t) = 1.4oC/W Max.

θJC

2. Duty Fact or, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

1/t2

θJC

0

10

(t)

1

10

Rectangular Pulse Duration [sec]

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDD5N50 N-Channel MOSFET

FDD5N50 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

+

V

V

DS

DS

_

_

L

LL

Sam e Type

Sam e Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

Driver

Driver

G

G

DUT

DUT

I

I

SD

SD

V

V

DD

DD

FDD5N50 N-Channel MOSFET

V

V

GS

GS

( D rive r )

( D rive r )

I

I

SD

SD

( D U T )

( D U T )

V

V

DS

DS

( DUT )

( DUT )

G ate Pulse W idth

G ate Pulse W idth

G ate Pulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forw ard Current

IFM, Body Diode Forw ard Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Recovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Volta

Forward Volta

e Dro

e Dro

di/dt

di/dt

10V

10V

V

V

DD

DD

FDD5N50 Rev. A

6

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Mechanical Dimensions

FDD5N50 N-Channel MOSFET

D-PAK

FDD5N50 Rev. A

Dimensions in Millimeters

7

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FDD5N50 N-Channel MOSFET

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use

2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result
in significant injury to the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference infor­mation only.

Rev. I32

FDD5N50 Rev. A

8

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