Datasheet FDD4685 Datasheet (Fairchild)

tm

FDD4685

(

)

40V P-Channel PowerTrench® MOSFET

–40V, –32A, 27mΩ

Features

 Max r

 High performance trench technology for extremely low r

 RoHS Compliant

= 27mΩ at VGS = –10V, ID = –8.4A

DS(on)

= 35mΩ at VGS = –4.5V, ID = –7A

DS(on)

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench deliver low superior performance in application.

r

DS(on)

Application

October 2006

®

and good switching characteristic offering

technology to

FDD4685 40V P-Channel PowerTrench

 Inverter

 Power Supplies

S

D

G

S

D-PAK

TO-252

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

Drain to Source Voltage –40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous(Package Limited) TC= 25°C –32

-Continuous(Silicon Limited) T

-Continuous T

-Pulsed –100

Drain-Source Avalanche Energy (Note 3) 121 mJ

Power Dissipation TC= 25°C 69

Power Dissipation (Note 1a) 3

Operating and Storage Junction Temperature Range –55 to +150 °C

= 25°C unless otherwise noted

C

A

= 25°C (Note 1) –40

= 25°C (Note 1a) –8.4

D

®

MOSFET

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.8

Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD4685 FDD4685 D-PAK(TO-252) 13’’ 12mm 2500 units

°C/W

1

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FDD4685 40V P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V –40 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = –32V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = –250µA, referenced to 25°C –33 mV/°C

= 0V –1 µA

GS

= 0V ±100 nA

GS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = –250µA –1 –1.6 –3 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = –5V, ID = –8.4A 23 S

ID = –250µA, referenced to 25°C 4.9 mV/°C

VGS = –10V, ID = –8.4A 23 27

VGS = –10V, ID = –8.4A, TJ=125°C 33 42

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 260 345 pF

Reverse Transfer Capacitance 140 205 pF

VDS = –20V, VGS = 0V, f = 1MHz

1790 2380 pF

Gate Resistance f = 1MHz 4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 15 27 ns

Turn-Off Delay Time 34 55 ns

VDD = –20V, ID = –8.4A VGS = –10V, R

GEN

= 6Ω

8 16 ns

Fall Time 14 26 ns

Total Gate Charge

Gate to Source Gate Charge 5.6 nC

VDD =–20V, ID = –8.4A V

= –5V

GS

19 27 nC

Gate to Drain “Miller” Charge 6.1 nC

mΩVGS = –4.5V, ID = –7A 30 35

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

R

θJC

a. 40°C/W when mounted on a 1 in

b. 96°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, V

FDD4685 Rev.B

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 31 47 nC

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

is determined by the user’s board design.

θJA

2

pad of 2 oz copper

GS

= 10V.

= 0V, IS = –8.4A (Note 2) –0.85 –1.2 V

GS

IF = –8.4A, di/dt = 100A/µs

2

30 45 ns

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FDD4685 40V P-Channel PowerTrench

Typical Characteristics T

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

80

60

40

, DRAIN CURRENT (A)

20

D

-I

0

01234

Figure 1.

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

VGS = -10V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

ID =-8.4A V

= -10V

GS

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = -6V

VGS = -4.5V

VGS = -4V

VGS = -3V

NORMALIZED

3.0

2.6

2.2

1.8

VGS = -3V

VGS = -4V

VGS = -4.5V

1.4

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

VGS = -6V

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.6 020406080100

-ID, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

70

ID = -8.4A

(mΩ)

60

50

, DRAIN TO

40

DS(on)

r

30

SOURCE ON-RESISTANCE

20

2345678910

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

T

Source Voltage

V

= 25

J

GS

= -10V

o

C

®

MOSFET

, DRAIN CURRENT (A)

-I

FDD4685 Rev.B

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

80

60

40

TJ = 150oC

20

D

0

123456

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

TJ = 25oC

Figure 5. Transfer Characteristics

40

V

= 0V

GS

10

TJ = 150oC

TJ = 25oC

1

TJ = -55oC

, REVERSE DRAIN CURRENT (A)

S

-I

0.1

0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

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FDD4685 40V P-Channel PowerTrench

Typical Characteristics T

10

V

= -10V

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

0

-V

0 10203040

Figure 7.

10

9 8 7

Gate Charge Characteristics Figure 8.

6 5

4

3

2

, AVALANCHE CURRENT(A)

AS

-I

1

0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE(ms)

Figure 9.

Switching Capability

DD

Qg, GATE CHARGE(nC)

TJ = 125oC

U n c l a m p e d I n d u c t i v e

= 25°C unless otherwise noted

J

VDD = -20V

VDD = -30V

TJ = 25oC

4

10

C

iss

3

10

C

oss

2

10

CAPACITANCE (pF)

f = 1MHz V

= 0V

GS

1

10

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

50

40

V

= -10V

GS

30

20

Limited by Package

, DRAIN CURRENT (A)

D

10

-I

R

= 1.8oC/W

θJC

0

25 50 75 100 125 150

V

= -4.5V

GS

TC, CASE TEMPERATURE (oC)

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

50

®

MOSFET

200

100

, DRAIN CURRENT (A)

D

-I

0.1

FDD4685 Rev.B

100us

10

1

OPERATION IN THIS AREA MAY BE LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

J

T

= 25OC

C

1ms

10ms

DC

110100

), PEAK TRANSIENT POWER (W)

PK

P(

-VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

4

300

250

200

150

100

50

-3

10

Figure 12.

FOR TEMPERATURES

o

VGS = -10V

SINGLE PULSE

-2

10

t, PULSE WIDTH (s)

ABOVE 25

CURRENT AS FOLLOWS:

-1

10

I = I

25

C DERATE PEAK

150 Tc–

-----------------------

125

Tc = 25oC

0

10

S i n g l e P u l s e M a x i m u m

Power Dissipation

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1

10

FDD4685 40V P-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE -DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.01

1E-3

-5

10

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

θJC

IMPEDANCE, Z

NORMALIZED THERMAL

= 25°C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

θJC

C

0

10

1

10

®

MOSFET

FDD4685 Rev.B

5

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™

®

FAST FASTr™ FPS™ FRFET™

FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™

2

I

C™

i-Lo™

ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™

MSXPro™ Across the board. Around the world.™ The Power Franchise

®

OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™

SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic

®

TINYOPTO™ TruTranslation™ UHC™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

UniFET™ UltraFET VCX™ Wire™

®

FDD4685 40V P-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

FDD4685 Rev. B

Rev. I20

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