Datasheet FDD4141 Datasheet (Fairchild)

tm

FDD4141

(

)

P-Channel PowerTrench® MOSFET

-40V, -50A, 12.3mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  RoHS Compliant

= 12.3mΩ at VGS = -10V, ID = -12.7A

DS(on)

= 18.0mΩ at VGS = -4.5V, ID = -10.4A

DS(on)

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench deliver low superior performance benefit in the applications. switching performance capability reducing power dissipation losses in converter/inverter applications.

r

Applications

 Inverter  Power Supplies

July 2007

®

technology to

and optimized Bvdss capability to offer

DS(on)

and optimized

FDD4141 P-Channel PowerTrench

®

MOSFET

S

D

G

S

D-PAK

TO-252

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage -40 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25°C -50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -100 Single Pulse Avalanche Energy (Note 3) 337 mJ Power Dissipation TC = 25°C 69 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

= 25°C -58

C

= 25°C (Note 1a) -10.8

A

= 25°C (Note 1a) 2.4

A

D

Thermal Characteristics

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.8 Thermal Resistance, Junction to Ambient (Note 1a) 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD4141 FDD4141 D-PAK (TO-252) 13’’ 12mm 2500 units

°C/W

1

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FDD4141 P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -32V, V Gate to Source Leakage Current VGS = ±20V, V

ID = -250µA, referenced to 25°C -29 mV/°C

= 0V -1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.8 -3 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = -5V, ID = -12.7A 38 S

ID = -250µA, referenced to 25°C 5.8 mV/°C VGS = -10V, ID = -12.7A 10.1 12.3

VGS = -4.5V, ID = -10.4A 14.5 18.0 VGS = -10V, ID = -12.7A,

TJ = 125°C

15.3 18.7

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance 360 480 pF Reverse Transfer Capacitance 210 310 pF

VDS = -20V, VGS = 0V, f = 1MHz

2085 2775 pF

Gate Resistance f = 1MHz 4.6 Ω

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 7 13 ns Turn-Off Delay Time 38 60 ns

VDD = -20V, ID = -12.7A, VGS = -10V, R

GEN

= 6Ω

10 19 ns

Fall Time 15 27 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 7 nC

= 0V to -10V

GS

= 0V to -5V 19 27 nC

GS

VDD = -20V, ID = -12.7A

36 50 nC

Gate to Drain “Miller” Charge 8 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes: 1: R

R

θJA θJC

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 26 40 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

is determined by the user’s board design.

θJA

a)

52°C/W when mounted on a

2

pad of 2 oz copper

1 in

= 0V, IS = -12.7A (Note 2) -0.8 -1.2 V

GS

IF = -12.7A, di/dt = 100A/µs

29 44 ns

b)

100°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting T

= 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.

J

2

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FDD4141 P-Channel PowerTrench

Typical Characteristics T

100

80

VGS = -4.5V

60

VGS = -10V

40

, DRAIN CURRENT (A)

D

-I

20

0

012345

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

1.8

ID = -12.7A V

GS

= -10V

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = -4V

VGS = -3.5V

VGS = -3V

o

C)

4.0

3.5

3.0

VGS = -3V

VGS = -3.5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

2.5

2.0

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 020406080100

-ID, DRAIN CURRENT(A)

VGS = -4V

VGS = -4.5V

V

= -10V

GS

Norma l i z e d O n - R esistance

vs Drain Current and Gate Voltage

55

ID = -12.7A

45

(mΩ)

35

, DRAIN TO

25

DS(on)

r

15

SOURCE ON-RESISTANCE

5

246810

-VGS, GATE TO SOURCE VOLTAG E (V)

Figure 4.

On-Resis tance vs Gate to

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

Source Voltage

®

MOSFET

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

80

V

= -5V

DS

60

40

, DRAIN CURRENT (A)

D

20

-I

0

12345

TJ = 150oC

TJ = 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = -55oC

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150oC

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

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FDD4141 P-Channel PowerTrench

Typical Characteristics T

10

ID = -12.7A

8

VDD = -15V

6

V

= -10V

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

-V

0

0 8 16 24 32 40

Figure 7.

30

10

, AVALANCHE CURRENT(A)

AS

-I

1

0.01 0.1 1 10 100 1000

Figure 9.

200

100

10

THIS AREA IS LIMITED BY r

1

, DRAIN CURRENT (A)

D

-I

0.1

0.1 1 10 100

Figure 11. Forward Bias Safe

DD

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

TJ = 125oC

tAV, TIME IN AVALANCHE(ms)

Uncl a m p e d I n duct i v e

Switching Capability

DS(on)

SINGLE PULSE

= MAX RATED

T

J

R

= 1.8oC/W

θJC

o

= 25

C

T

C

-VDS, DRAIN to SOURCE VOLTAGE (V)

Operating Area

= 25°C unless otherwise noted

J

VDD = -20V

TJ = 25oC

100us

1ms 10ms

DC

10000

C

iss

1000

CAPACITANCE (pF)

f = 1MHz

= 0V

V

GS

100

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

oss

C

rss

Capacitance vs Drain

to Source Voltage

60

50

40

V

= -4.5V

GS

30

Limited by Package

20

, DRAIN CURRENT (A)

D

-I

10

R

= 1.8oC/W

θJC

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (

C

Figure 10.

Ma xim um C ont inu ous Dra in

V

o

Current vs Case Temperature

10000

VGS = -10V

1000

FOR TEMPERATURES ABOVE 25oC DERATE PEAK

SINGLE PULSE

CURRENT AS FOLLOWS:

R

θJC

150 TC–

------------------------

I = I

25

125

100

), PEAK TRANSIENT POWER (W)

PK

P(

50

10-510-410-310-210-110010110210

Figure 12.

t, PULS E WIDTH (s)

Single Pulse M aximu m

Power Dissipation

= -10V

GS

C)

= 1.8oC/W

TC = 25oC

40

®

MOSFET

3

4

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FDD4141 P-Channel PowerTrench

Typical Characteristics T

2

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

o

R

= 1.8

C/W

θJC

-5

10

-4

10

θJC

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

0.005

= 25°C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

θJC

C

0

10

1

10

®

MOSFET

5

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TRADEMARKS

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The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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FDD4141 P-Channel PowerTrench

®

MOSFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

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Datasheet Identification Product Status Definition

Advance Information Formative or In Design This d atasheet contains the design specifications for product

Preliminary First Production This datasheet contains preliminary data; supplementary dat a

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Product ion This datasheet contains specifications on a product that has

development. Specifications may change in any manner without notice.

will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Semiconductor reserves the right to make changes at any time without notice to improve design.

been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.

Rev. I29

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