Page 1
tm
FDD3860
(
)
N-Channel PowerTrench® MOSFET
100V, 29A, 36mΩ
Features
Max r
High performance trench technology for extremely low r
100% UIL tested
RoHS Compliant
= 36mΩ at VGS = 10V, ID = 5.9A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low r
ruggedness for a wide range of switching applications
Applications
DC-AC Conversion
Synchronous Rectifier
October 2008
and low Qg figure of merit, with avalanche
DS(on)
FDD3860 N-Channel PowerTrench
.
®
MOSFET
D
G
D
S
D-PAK
TO-252
G
TO-252
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Silicon limited) TC = 25°C 29
-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 121 mJ
Power Dissipation TC = 25°C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
C
= 25°C (Note 1a) 6.2
A
= 25°C (Note 1a) 3.1
A
A -Continuous T
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD3860 FDD3860 D-PAK (TO-252) 13’’ 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
°C/W
1
www.fairchildsemi.com
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FDD3860 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 98 mV/°C
= 0V 1 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.8 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 5.9A 20 S
ID = 250µA, referenced to 25°C -11.4 mV/°C
VGS = 10V, ID = 5.9A 29 36
VGS = 10V, ID = 5.9A, TJ = 125°C 51 64
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 100 130 pF
Reverse Transfer Capacitance 45 70 pF
VDS = 50V, VGS = 0V,
f = 1MHz
1310 1740 pF
Gate Resistance f = 1MHz 1.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 10 21 ns
Turn-Off Delay Time 24 39 ns
VDD = 50V, ID = 5.9A,
VGS = 10V, R
GEN
= 6Ω
16 29 ns
Fall Time 7 15 ns
Total Gate Charge at 10V
Gate to Source Charge 7.1 nC
VDD = 50V, ID = 5.9A
22 31 nC
Gate to Drain “Miller” Charge 6.3 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 40 64 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
= 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V.
J
is determined by the user’s board design.
θJA
V
V
IF = 5.9A, di/dt = 100A/µs
a)
40°C/W when mounted on a
2
pad of 2 oz copper
1 in
= 0V, IS = 2.0A (Note 2) 0.7 1.2
GS
= 0V, IS = 5.9A (Note 2) 0.8 1.3
GS
34 55 ns
b)
96°C/W when mounted
on a minimum pad.
V
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Page 3
FDD3860 N-Channel PowerTrench
Typical Characteristics T
60
VGS = 10V
50
VGS = 8V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On-Region Characteristics Figure 2.
2.2
ID = 5.9A
2.0
V
= 10V
GS
1.8
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
0.4
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
Fig ure 3. Nor mal ize d On - Re sista nce
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 25°C unless otherwise noted
J
VGS = 7V
VGS = 6V
o
C)
3.0
PULSE DURATION = 80µs
2.5
VGS = 6V
DUTY CYCLE = 0.5%MAX
VGS = 7V
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 102030405060
I
, DRAIN CURRENT (A)
D
VGS = 8V
V
GS
= 10V
Nor mal i zed On- Res i sta nce
vs Drain Current and Gate Voltage
100
ID = 5.9A
80
(mΩ)
60
, DRAIN TO
40
DS(on)
r
20
SOURCE ON-RESISTANCE
0
5678910
VGS, GATE TO SOURCE VOLTAG E (V)
Figure 4.
On-Resistance vs Gate to
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
V
= 10V
DS
40
30
TJ = 150oC
20
, DRAIN CURRENT (A)
D
10
I
0
246810
TJ = 25oC
VGS, GATE TO SOURCE V OLTAGE (V)
Figure 5. Transfer Characteristics
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
TJ = -55oC
100
V
= 0V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6.
TJ = 150oC
TJ = 25oC
TJ = -55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
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FDD3860 N-Channel PowerTrench
Typical Characteristics T
10
ID = 5.9A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
0 5 10 15 20 25
Figure 7.
10
8
6
4
2
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
VDD = 50V
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
TJ = 125oC
tAV, TIME IN AVALANCHE (ms)
= 25°C unless otherwise noted
J
V
= 25V
DD
VDD = 75V
TJ = 25oC
3000
1000
100
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
iss
C
oss
C
rss
Cap a cit a nce v s Dr a in
to Source Voltage
35
28
V
= 10V
GS
21
14
R
= 1.8oC/W
, DRAIN CURRENT (A)
D
I
θJC
7
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (
C
o
C)
®
MOSFET
Figure 9.
Unc l a mped I nduc t i ve
Switching Capability
100
10
1
, DRAIN CURRENT (A)
THIS AREA IS
D
I
LIMITED BY r
0.1
0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
ds(on)
SINGLE PULSE
T
R
T
Figure 11. Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
= MAX RATED
J
= 1.8oC/W
θJC
o
= 25
C
C
100us
1ms
10ms
DC
300
Figure 10.
10
10
10
10
), PEAK TRANSIENT POWER (W)
PK
P(
10
10
Figure 12.
Ma xi mum Continuous Drain
Current vs Case Temperature
5
VGS = 10V
4
3
2
-6
-5
10
10
t, PULSE WIDTH (sec)
SINGLE PULSE
= 1.8oC/W
R
θJC
-4
-3
-2
10
10
-1
10
Single Pulse Maximum Power Dissipation
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1
Page 5
FDD3860 N-Channel PowerTrench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
θJC
0.1
IMPEDANCE, Z
0.01
NORMALIZED THERMAL
0.001
θJA
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
0.2
0.1
0.05
0.02
0.01
-6
10
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
-5
10
= 25°C unless otherwise noted
J
NOTES:
SINGLE PULSE
o
= 1.8
θJC
C/W
R
-4
10
-3
10
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
SINGLE PULSE
R
= 40oC/W
θJA
(Note 1a)
-2
10
-1
10
110
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
FOR TEMPERATURES
o
I = I
25
C DERATE PEAK
P
DM
150 TC–
------------------------
125
1/t2
x R
θJC
θJC
-1
10
P
DM
1/t2
x R
θJA
θJA
t
1
t
2
TC = 25oC
+ T
C
t
1
t
2
+ T
A
ABOVE 25
CURRENT AS FOLLOWS:
100 1000
1
®
MOSFET
2
1
DUTY CYCLE-DESCENDING ORDER
0.1
θJA
Z
D = 0.5
0.2
0.1
0.05
0.01
0.02
0.01
IMPEDANCE,
0.001
NORMALIZED THERMAL
0.0001
-4
10
10
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
Figure 14. Transient Thermal Response Curve
SINGLE PULSE
R
= 96oC/W
θJA
(Note 1b)
-3
Figure 15.
-2
10
-1
10
110
t, RECTANGULAR PULSE DURATION (sec)
Transient Thermal Response Curve
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
θJA
t
1
t
2
2
x R
+ T
θJA
A
100 1000
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tm
®
tm
tm
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intended to be an exhaustive list of all such trademarks.
®
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™
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®
®
®
®
®
*
®
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®
are trademarks of System General Corporation, used under license by Fairchild Semiconducto r.
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™
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®
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FDD3860 N-Channel PowerTrench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonabl y expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Counterfeiting of semiconductor parts is a growing prob lem in the indust ry. All manufactur es of semiconductor produ cts are experien cing counterfeiting of their
parts. Customers who inadvertently purchase count erfeit par ts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild stro ngly encourage s customers to purchase Farichi ld parts either direct ly from Fairchild or from Auth orized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any ti me without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
6
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Rev. I37
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