Datasheet FDU3706, FDD3706 Datasheet (Fairchild Semiconductor)

Page 1

April 2002

FDD3706/FDU3706

20V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low R

in a small package.

DS(ON)

Applications

• DC/DC converter

• Motor Drives

Features

• 50 A, 20 V R R R

• Low gate charge (16 nC)

• Fast Switching

• High performance trench technology for extremely

low R

DS(ON)

= 9 mΩ @ VGS = 10 V

DS(ON)

= 11 mΩ @ VGS = 4.5 V

DS(ON)

= 16 mΩ @ VGS = 2.5 V

DS(ON)

D-PAK

TO-252

(TO-252)

I-PAK

(TO-251AA)

G D S

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

Drain-Source Voltage 20 V

DSS

Gate-Source Voltage ± 12 V

GSS

ID Continuous Drain Current @TC=25°C (Note 3) 50 A @TA=25°C (Note 1a) 14.7 Pulsed (Note 1a) 60 PD

TJ, T

STG

Power Dissipation @TC=25°C (Note 3) 44 @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) 1.6

Operating and Storage Junction Temperature Range -55 to +175 °C

Thermal Characteristics

Thermal Resistance, Junction-to-Case (Note 1) 3.4 °C/W

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

FDD3706 FDD3706 D-PAK (TO-252) 13’’ 12mm 2500 units FDU3706 FDU3706 I-PAK (TO-251) Tube N/A 75

2002 Fairchild Semiconductor Corp.

FDD3706/FDU3706 Rev C (W)

Page 2

FDD3706/FDU3706

Electrical Characteristics T

Symbol Drain-Source Avalanche Ratings (Note 2)

Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

EAS Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=7A 60 mJ IAS Drain-Source Avalanche Current 7 A

Off Characteristics

Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V

DSS

∆BVDSS ∆TJ

DSS

GSSF

GSSR

Breakdown Voltage Temperature

ID = 250 µA,Referenced to 25°C

mV/°C

Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA

On Characteristics (Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 1 1.5 V

GS(th)

∆VGS(th) ∆TJ

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

ID = 250 µA,Referenced to 25°C

VGS = 10 V, ID = 16.2 A VGS = 4.5 V, ID = 14.7 A VGS = 2.5 V, ID = 12.2 A VGS = 4.5 V, ID = 14.7 A,TJ = 125°C

On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A

D(on)

–3.5

7.5 8

12.6

16 19

mV/°C

mΩ

gFS Forward Transconductance VDS = 5 V, ID = 14.7 A 65 S

Dynamic Characteristics

Input Capacitance 1882 pF

iss

Output Capacitance 430 pF

oss

Reverse Transfer Capacitance

rss

VDS = 10 V, V f = 1.0 MHz

= 0 V,

201 pF

Switching Characteristics (Note 2)

Turn–On Delay Time 11 20 ns

d(on)

tr Turn–On Rise Time 15 27 ns t

Turn–Off Delay Time 35 56 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 16 23 nC Qgs Gate–Source Charge 3.7 nC Qgd Gate–Drain Charge

VDD = 10 V, ID = 1 A, VGS = 4.5 V, R

GEN

= 6 Ω

VDS = 10V, ID = 14.7 A, VGS = 4.5 V

16 29 ns

4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A VSD Drain–Source Diode Forward Voltage

Notes:

1. R

θJA

the drain pins. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 3.2 A (Note 2)

0.7 1.2 V

a) R

= 40°C/W when mounted on a

θJA

1in2 pad of 2 oz copper

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

DS(ON)

is at T

DS(on)

and VGS = 10V. Package current limitation is 21A

J(max)

FDD3706/FDU3706 Rev C (W)

Page 3

, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

3.5V

3.0V

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

, ON-RESISTANCE (OHM)

, DRAIN CURRENT (A)

, REVERSE DRAIN CURRENT (A)

FDD3706/FDU3706

Typical Characteristics

100

VGS=4.5V

3.5V

0 1 2 3 4 5

3.0V

2.5V

2.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

1.8

1.6 VGS = 2.5V

1.4

1.2

0.8

0 20 40 60 80 100

ID, DRAIN CURRENT (A)

4.0V

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.6 ID = 14.7A

VGS = 4.5V

1.4

1.2

0.8

0.03

0.025

0.02

0.015

0.01

TA = 125oC

TA = 25oC

4.5V

ID = 7.4A

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation

withTemperature

VDS = 5V

1 1.5 2 2.5 3

VGS, GATE TO SOURCE VOLTAGE (V)

TA =-55oC

25oC

125oC

0.005 1 2 3 4 5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

100

VGS = 0V

0.1

0.01

0.001

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD3706/FDU3706 Rev C (W)

Page 4

, GATE-SOURCE VOLTAGE (V) CAPACITANCE (pF)

, DRAIN CURRENT (A)

P(pk), PEAK TRANSIENT POWER (W)

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

FDD3706/FDU3706

Typical Characteristics

ID = 14.7A

0 10 20 30 40

Qg, GATE CHARGE (nC)

VDS = 5V

10V

15V

2500

2000

1500

1000

500

OSS

RSS

0 5 10 15 20

VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000

10ms

100µs

1ms

100

LIMIT

DS(ON)

VGS = 4.5V

SINGLE PULSE

0.1

= 96oC/W

TA = 25oC

0.01

0.01 0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

100ms 1s

10s

100

SINGLE PULSE

0.01 0.1 1 10 100 1000

t1, TIME (sec)

f = 1MHz

VGS = 0 V

= 96°C/W

θJA

TA = 25°C

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.1

0.01

0.001

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

(t) = r(t) * R

= 96 °C/W

θJA

P(pk)

TJ - TA = P * R

Duty Cycle, D = t1 / t

(t)

0.0001

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD3706/FDU3706 Rev C (W)

Page 5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I1