Datasheet FDD3690 Datasheet (Fairchild Semiconductor)

FDD3690

100V N-Channel PowerTrench



MOSFET

FDD3690

April 2001

General Description

This N-Channel MOSFET has been designed specifically to i mprove the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM c ontrollers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable

specifications.

R

DS(ON)

The result is a MOSF ET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 22 A, 100 V. R R

• Low gate charge (28nC typical)

• Fast Switching

• High performance trench te chnology for extremely

low R

• High power and current handling capability

DS(ON)

= 64 mΩ @ VGS = 10 V

DS(ON)

= 71 mΩ @ VGS = 6 V

DS(ON)

D

G

S

D-PAK

TO-252

(TO-252)

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

G

S

Symbol Parameter Ratings Units

V

Drain-Source Voltage 100 V

DSS

V

Gate-Source Voltage

GSS

ID Continuous Drain Current @TC=25°C (Note 3) 22 A Pulsed (Note 1a) 75 PD

TJ, T

STG

Power Dissipation @TC=25°C (Note 3) 60 @TA=25°C (Note 1a) 3.8 @T

Operating and Storage Junction Temperature Range –55 to +175

=25°C (Note 1b) 1.6

A

±20

V

W

°C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

(Note 1) 2.5 (Note 1a) 40 (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD3690 FDD3690 13’’ 16mm 2500 units

2001 Fairchild Semiconductor Corp.

°C/W °C/W °C/W

FDD3690 Rev C(W)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)

W

Single Pulse Drain-Source

DSS

VDD = 50 V, ID = 5.4 A 175 mJ

Avalanche Energy

IAR Maximum Drain-Source Avalanche

5.4 A

Current

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

100 V

78

mV/°C

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

I

On-State Drain Current VGS = 10 V, VDS = 5 V 20 A

D(on)

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 5.4 A

= 6 V, ID = 5.2 A

V

GS

= 10 V, ID = 5.4 A, TJ = 125°C

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 5.4 A 20 S

2 2.4 4 V

–6.2

44 47 88

mV/°C

64 71

135

FDD3690

µA

mΩ

Dynamic Characteristics

V

C

Input Capacitance 1514 pF

iss

C

Output Capacitance 82 pF

oss

C

Reverse Transfer Capacitance

rss

= 50 V, V

DS

f = 1.0 MHz

= 0 V,

GS

44 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 11 20 ns

d(on)

tr Turn–On Rise Time 6.5 15 ns t

Turn–Off Delay Time 29 60 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 28 39 nC Qgs Gate–Source Charge 6.2 nC Qgd Gate–Drain Charge

= 50 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

= 50 V, ID = 5.4 A,

V

DS

V

= 10 V

GS

GEN

= 6 Ω

10 20 ns

5.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Di ode Forward Current 3.2 A VSD Drain–Source Diode Forward Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where P

D

is guaranteed by design while R

θJC

P

R

is maximum power dissipation at TC = 25°C and R

is determined by the user's board design.

θCA

= 40°C/W when mounted on a

a) R

θJA

2

1in

pad of 2 oz copper

D

DS(ON)

DS(on)

V

= 0 V, IS = 3.2 A (Note 2)

GS

is at T

and VGS = 10V. Package current limitation is 21A

J(max)

0.73 1.2 V

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

FDD3690 Rev. C(W)

E

)

Typical Characteristics

FDD3690

35

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

01234

VGS = 10V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

5.0V

4.5V

4.0V

3.5V

1.6

1.4

VGS = 4.0V

4.5V

1.2

, NORMALIZED

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0 5 10 15 20 25 30 35

5.0V

6.0V

I

, DRAIN CURRENT (A)

D

10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.6 ID = 5.4 A

2.4

= 10V

V

GS

2.2

2

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

1

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.15

0.12

0.09

0.06

, ON-RESISTANCE (OHM)

0.03

DS(ON)

R

0

2345678910

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

ID = 2.7 A

Figure 3. On-Resistance Variation with

Temperature.

35

VDS = 5V

30

25

20

15

10

, DRAIN CURRENT (A

D

I

5

0

22.533.544.55

125oC

25oC

TA = -55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

o

25

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD3690 Rev. C(W)

)

Typical Characteristics

FDD3690

10

ID = 5.4 A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20 25 30

, GATE CHARGE (nC)

Q

g

VDS = 20V

50

30V

2500

2000

C

1500

1000

CAPACITANCE (pF)

500

C

RSS

0

0 1020304050

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

ISS

C

OSS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

100

R

LIMIT

DS(ON)

10

1

VGS = 10V

0.1 SINGLE PULSE

, DRAIN CURRENT (A

D

I

0.01

0.001

= 96oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100 1000

V

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1s

10ms

100µs

1ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

, TIME (SEC)

t

1

SINGLE PULSE

R

θ

V

= 96oC/W

JA

T

= 25oC

A

f = 1MHz

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.01 SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

R

(t) = r(t) + R

JA

θ

R

= 96 °C/W

θJA

P(pk

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

JA

θ

(t)

θJA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD3690 Rev. C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOL T™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™



FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN™ POP™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART ST ART™ Stealth™



SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H2