Page 1
FDD3670
100V N-Channel PowerTrench MOSFET
FDD3670
January 2000
ADVANCE INFORMATION
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controllers.
Features
34 A, 100 V. R
•
Low gate charge (57 nC typical)
•
= 0.030 Ω @ VGS = 10 V
DS(ON)
= 0.033 Ω @ VGS = 6 V
R
DS(ON)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications.
R
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Fast switching speed
•
High performance trench technology for extremely
•
low R
DS(ON)
High power and current handling capability.
•
D
D
G
S
G
TO-252
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 100 V
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
20
±
34 A
Drain Current – Pulsed 100
Maximum Power Dissipation @ TC = 25°C
@ TA = 25°C
@ TA = 25°C
(Note 1)
(Note 1a)
(Note 1b)
70
3.2
1.3
Operating and Storage Junction Temperature Range -55 to +150
V
W
C
°
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
1.8
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3670 FDD3670 13’’ 16mm 2500 units
2000 Fairchild Semiconductor Corpor ation
C/W
°
C/W
°
FDD3670 Rev A(W)
Page 2
FDD3670
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆
∆
I
DSS
I
GSSF
I
GSSR
DSS
BV
T
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 25
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
GS(th)
V
T
DS(on)
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 7.3 A 31 S
(Note 2)
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 7.3 A
= 10 V, ID = 7.3 A
V
GS
V
= 6 V, ID = 7.0 A
GS
= 125°C
T
J
100 V
92
mV/°C
A
µ
22.54 V
–7.2
0.022
0.039
0.024
0.030
0.060
0.033
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 2490 pF
Output Capacitance 265 pF
Reverse Transfer Capacitance
V
= 50 V, V
DS
f = 1.0 MHz
GS
= 0 V,
80 pF
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 16 26 ns
Turn–On Rise Time 10 18 ns
Turn–Off Delay Time 56 84 ns
Turn–Off Fall Time
Total Gate Charge 57 80 nC
Gate–Source Charge 11 nC
Gate–Drain Charge
(Note 2)
V
= 50 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 50 V, ID = 25 A,
DS
= 10 V
V
GS
GEN
= 6
Ω
25 40 ns
15 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
R
1.
JA
θ
the drain pins. R
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
Maximum Continuous Drain–Source Diode Forward Current 2.7 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
JC
θ
a) R
= 40oC/W when
JA
θ
mounted on a 1in2 pad of
2oz copper.
V
= 0 V, IS = 2.7 A
GS
is determined by the user's board design.
CA
θ
(Note 2)
b) R
= 96oC/W on a
JA
θ
minimum mounting pad.
1.2 V
FDD3670 Rev A(W)
Page 3
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Packaging
Configuration: Figure 1.0
Packaging Description:
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms
MAX _____________ gms
ESD Label
F63TNR
Label
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
TO-252 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in di ffe re nt siz es depe nd in g on the nu m ber of pa rts
shippe d.
D-PAK (TO-252) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (k g)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
359x359x57
5,000
0.300
1.200
F63TNR Label sample
LOT: CBVK741B019
FSID: FDD6680
D/C1: Z9942 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2500
SPEC:
N/F: F (F63TNR)3
TO-252 (D-PAK) Tape Leader and
Trailer Configuration: Figure 2.0
6680
FDD
F
Z9935
6680
FDD
F
Z9935
D-PAK (TO-252) Unit Orientation
359mm x 359mm x 57mm
Stand a r d In termediate box
F63TNR Label
6680
FDD
F
Z9935
ESD Label
6680
FDD
F
Z9935
Carrier Tape
Cover Tape
Trailer Tape
640mm minimum or
80 empty pockets
Components
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. A
Page 4
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Embossed Carrier
Tape Co nfi guratio n: Figure 3.0
T
K0
Wc
B0
P0
D0
E1
F
W
E2
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg ty pe
TO252
(24mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
D-PAK (TO-252) Reel
Configuration: Figure 4.0
Dim A
max
A0 B0 W D0 D1 E1 E2 F P1 P 0 K0 T Wc Tc
6.90
10.50
16.0
1.55
1.5
1.75
14.25
+/-0.10
+/-0.10
10 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
+/-0.3
+/-0.05
+/-0.10
+/-0.10
B0
Sketch B (Top View)
Component Rotation
min
7.50
+/-0.10
10 deg maximum
A0
W1 Measured at Hub
Dim N
8.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
Dim D
min
4.0
+/-0.1
2.65
0.30
+/-0.05
13.0
+/-0.3
0.9mm
maximum
+/-0.10
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
B Min
Dim C
0.06
+/-0.02
Tape Size
164mm 13" D ia
Reel
Option
DETAIL AA
13" Diameter Option
See detail AA
W2 max Measured at Hub
W3
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
13.00
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
330
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 – 0.764
15.9 – 19.4
July 1999, Rev. A
Page 5
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
2
E
CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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