Datasheet FDD3580 Datasheet (Fairchild Semiconductor)

August 2001

2001 Fairchild Semiconductor Corporation

FDD3580/FDU3580 Rev A1(W)

FDD3580/FDU3580

80V N-Channel PowerTrench



MOSFET

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable R

DS(ON)

specifications resulting in DC/DC power supply desi gns
with higher overall efficiency.

Features

• 7.7 A, 80 V. R

DS(ON)

= 29 mΩ @ VGS = 10 V

R

DS(ON)

= 33 mΩ @ VGS = 6 V

• Low gate charge (34nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

S

D

G

Absolute Maximum Ratings T

A

=25oC unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage 80 V

V

GSS

Gate-Source Voltage

± 20

V

Maximum Drain Current-Continuous (Note 1a) 7.7I

D

Maximum Drain Current – Pulsed 50

A

Maximum Power Dissipation @TC = 25oC (Note 1) 42

TA = 25oC (Note 1a) 3.8

P

D

TA = 25oC (Note 1b) 1.6

W

TJ, T

STG

Operating and Storage Junction Temperature Range

−55 to +175 °C

Thermal Characteristics

R

θJC

Thermal Resistance, Junction-to- Case (Note 1) 3.5

°C/W

R

θJA

Thermal Resistance, Junction-to- Ambient (Note 1b) 96

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD3580 FDD3580 13’’ 16mm 2500
FDU3580 FDU3580 Tube N/A 75

FDD3580

/

FDU3580

G DS

I-PAK

(TO-251AA)

G

S

D

TO-252

D-PAK

(TO-

G

S

D

TO-252

D-PAK

(TO-252)

FDD3580/FDU3580 Rev. A1(W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)

W

DSS

Single Pulse Drain-Source
Avalanche Energy

VDD = 40 V, ID = 7.7 A 245 mJ

I

AR

Maximum Drain-Source
Avalanche Current

7.7 A

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, ID = 250 µA

80 V

∆BVDSS
∆T

J

Breakdown Voltage Temperature
Coefficient

I

D

= 250 µA, Referenced to 25°C

79

mV/°C

I

DSS

Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1

µA

I

GSSF

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

I

GSSR

Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

On Characteristics (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS,ID = 250 µA

22.54 V

∆VGS(th)
∆T

J

Gate Threshold Voltage
Temperature Coefficient

I

D

= 250 µA, Referenced to 25°C −7mV/°C

R

DS(on)

Static Drain–Source
On–Resistance

VGS = 10 V, ID = 7.7 A
V

GS

= 6 V, ID = 7.2 A

V

GS

= 10 V, ID = 7.7 A,TJ=125°C

23
24
37

29
33
50

mΩ

I

D(on)

On–State Drain Current VGS = 10 V, VDS = 10 V 30 A

g

FS

Forward Transconductance VDS = 10 V, ID = 7.7 A 28 S

Dynamic Characteristics

C

iss

Input Capacitance 1760 pF

C

oss

Output Capacitance 144 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 40 V, V

GS

= 0 V,

f = 1.0 MHz

72 pF

Switching Characteristics (Note 2)

t

d(on)

Turn–On Delay Time 13 23 ns

t

r

Turn–On Rise Time 8 16 ns

t

d(off)

Turn–Off Delay Time 34 54 ns

t

f

Turn–Off Fall Time

V

DD

= 40 V, ID = 1 A,

V

GS

= 10 V, R

GEN

= 6 Ω

16 29 ns

Q

g

Total Gate Charge 35 49 nC

Q

gs

Gate–Source Charge 6.2 nC

Q

gd

Gate–Drain Charge

V

DS

= 40V, ID = 7.7 A,

V

GS

= 10 V,

8.6 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 3.2 A

V

SD

Drain–Source Diode Forward
Voltage

VGS = 0 V, IS = 3.2 A (Note 2) 0.73 1.2 V

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) R

θJA

= 40 °C/W when mounted on a

1in2 pad of 2 oz copper.

Scale 1 : 1 on letter size paper

b) R

θJA

= 96 °C/W when mounted

on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDD3580

/

FDU3580

FDD3580/FDU3580 Rev. A1(W)

Typical Characteristics

0

10

20

30

40

50

60

012345

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

6.0V

4.0V

VGS = 10V

5.0V

4.5V

0.8

1

1.2

1.4

1.6

1.8

2

0 102030405060

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 4.0V

5.0V

4.5V

10V

6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

-50 -25 0 25 50 75 100 125 150 175

T

J

, JUNCTION TEMPERATURE (oC)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANC

E

ID = 7.7A

V

GS

= 10V

0.01

0.02

0.03

0.04

0.05

0.06

246810

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM )

ID =3.8A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

10

20

30

40

50

60

23456

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

TA = 125oC

-55oC

VDS = 5V

25oC

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

V

SD

, BODY DIODE FORWARD V O LTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A

)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD3580

/

FDU3580

FDD3580/FDU3580 Rev. A1(W)

Typical Characteristics

0

2

4

6

8

10

0 5 10 15 20 25 30 35

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

ID = 7.7A VDS = 10V

20V

40V

0

400

800

1200

1600

2000

2400

0 20406080

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

ISS

C

RSS

C

OSS

f = 1MHz
V

GS

= 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

1000

0.1 1 10 100

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

DC

1s

100ms

R

DS(ON)

LIMIT

VGS = 10V

SINGLE PULSE

R

θ

JA

= 96oC/W

T

A

= 25oC

10ms

1ms

100µs

10s

0

20

40

60

80

100

0.01 0.1 1 10 100 1000

t1, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θ

JA

= 96°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANC

E

R

θJA

(t) = r(t) + R

θJA

R

θJA

= 96 °C/W

T

J

- TA = P * R

θ

JA

(t)

Duty Cycle, D = t

1

/ t

2

P(pk)

t

1

t

2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD3580

/

FDU3580

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Formative or
In Design

First Production

Full Production

Not In Production

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