Datasheet FDD3570 Datasheet (Fairchild Semiconductor)

FDD3570

80V N-Channel PowerTrench MOSFET

FDD3570

February 2000

PRELIMINARY

General Description

This N-Channel Logic level MOSFET has been designed specifically to improve the overall effici ency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

10 A, 80 V. R

•

R

Fast switching speed.

•

= 0.019 Ω @ VGS = 10 V

DS(ON)

= 0.022 Ω @ VGS = 6 V.

DS(ON)

This MOSFET features faster switching and lower gate change than other MOSFETs with comparable R specifications resulting in DC/DC power supply des igns with higher overall efficiency.

DS(ON)

High performance trench technology for extremely

•

DS(ON)

.

low R

High power and current handling capability.

•

D

G

S

G

TO-252

S

Absolute Maximum Ratings

TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 80 V Gate-Source Voltage Maximum Drain Current-Continuous

(Note 1) (Note 1a)

20

±

43

10 Maximum Drain Current – Pulsed 110 Maximum Power Dissipation @TC = 25oC

TA = 25oC TA = 25oC

(Note 1) (Note 1a) (Note 1b)

69

3.4

1.3

Operating and Storage Junction Temperature Range -55 to +150

W

°

V A

C

Thermal Characteristics

R

JC

θ

R

JA

θ

Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient

(Note 1) (Note 1a) (Note 1b)

1.8 37 96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD3570 FDD3570 13’’ 16mm 2500

2000 Fairchild Semiconductor Corpor ation



C/W

°

C/W

°

C/W

°

FDD3570 Rev BW)

FDD3570

Electrical Characteristics

TA = 25°C unless otherwise noted16

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

BV

∆

T

∆

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

V

∆

T

∆

J

R

DS(on)

I

D(on)

g

FS

Drain–Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

V

= 0 V, ID = 250 µA

GS

I

= 250 µA,Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 Gate–Body Leakage Current,

VGS = 20 V, VDS = 0 V 100 nA

80 V

78

mV/°C

µ

Forward Gate–Body Leakage Current,

VGS = –20 V VDS = 0 V –100 nA

Reverse

(Note 2)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient Static Drain–Source

On–Resistance

V

= VGS, ID = 250 µA

DS

= 250 µA,Referenced to 25°C

I

D

VGS = 10 V, ID = 10 A

= 10 V, ID = 10 A,TJ =125°C

V

GS

V

= 6 V, ID = 9 A

GS

22.44 V

-7

0.015

0.027

0.016

0.019

0.038

0.022

mV/°C

On–State Drain Current VGS = 10 V, VDS = 5 V 25 A Forward Transconductance VDS = 5 V, ID = 14 A 40 S

A

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 2800 pF Output Capacitance 230 pF Reverse Transfer Capacitance

= 40 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

117 pF

Switching Characteristics

t t t t Q Q Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 20 32 ns Turn–On Rise Time 12 24 ns Turn–Off Delay Time 60 95 ns Turn–Off Fall Time Total Gate Charge 54 76 nC Gate–Source Charge 9.6 nC Gate–Drain Charge

(Note 2)

V

= 40 V, ID = 1 A,

DD

= 10 V, R

V

GS

= 40V, ID = 9 A,

V

DS

= 10 V

V

GS

GEN

= 6

Ω

24 38 ns

14 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

R

1.

JA

θ

the drain pins. R

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2.

Maximum Continuous Drain–Source Diode Forward Current 2.8 A Drain–Source Diode Forward

VGS = 0 V, IS = 2.8 A

(Note 2)

0.72 1.2 V

Voltage

is guaranteed by design while R

JC

θ

is determined by the user's board design.

CA

θ

a) R

= 40°/W when mounted on a

JA

θ

1in2 pad of 2 oz copper

b) R

= 96°/W when mounted on

JA

θ

a minimum pad.

FDD3570 Rev. A(W)

Typical Characteristics

V

FDD3570

50

VGS = 10V

6.0V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

0123

5.0V

4.5V

4.0

3.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

2

1.8

1.6

VGS = 4.0V

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0 1020304050

4.5V

5.0V

6.0V

, DRAIN CURRENT (A)

I

D

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID = 9A

1.8 = 10V

V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

10V

ID = 10 A

Figure 3. On-Resistance Variation with

Temperature.

50

VDS = 5V

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

23456

125oC

25oC

TA = -55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD3570 Rev. A(W)

Typical Characteristics

N

E

FDD3570

10

ID = 9A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 102030405060

Q

, GATE CHARGE (nC)

g

VDS = 10V

20V

40V

4000 3500 3000 2500 2000 1500

CAPACITANCE (pF)

1000

500

0

0 102030405060

C

ISS

C

OSS

C

RSS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

R

LIMIT

DS(ON)

100

10s

1s

10ms

100ms

10

1

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A)

D

I

R

0.1

0.01

= 96oC/W

JA

θ

= 25oC

T

A

0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

DC

100µs

1ms

200

150

100

50

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

SINGLE PULSE

R

= 96 °C/W

JA

θ

= 25°C

T

A

f = 1MHz V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

THERMAL RESISTANCE

0.001

r(t), NORMALIZED EFFECTIVE TRANSIE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULS

t

, TIME (sec)

1

R

(t) = r(t ) + R

JA

θ

R

= 96 °C/W

JA

θ

P(pk)

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDD3570 Rev. A(W)

TO-252 Tape and Reel Data and Package Dimensions

D-PAK (TO-252) Packaging Configuration: Figure 1.0

Packaging Description:

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC

ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE

PT NUMBER

PEEL STRENGTH MIN ______________gms

MAX _____________ gms

ESD Label

F63TNR Label

Antistatic Cover Tape

Static Dissipative

Embossed Carrier Tape

TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table.

These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in di ffe re nt siz es depe nd in g on the nu m ber of pa rts shippe d.

D-PAK (TO-252) Packaging Information

Packaging Option

Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel(kg)

Note/Comments

Standard

(no flow code)

TNR

2,500

13" Dia

359x359x57

5,000

0.300

1.200

F63TNR Label sample

LOT: CBVK741B019

FSID: FDD6680

D/C1: Z9942 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 2500

SPEC:

N/F: F (F63TNR)3

TO-252 (D-PAK) Tape Leader and Trailer Configuration: Figure 2.0

6680 FDD

F

Z9935

6680 FDD

F

Z9935

D-PAK (TO-252) Unit Orientation

359mm x 359mm x 57mm

Stand a r d In termediate box

F63TNR Label

6680 FDD

F

Z9935

ESD Label

6680 FDD

F

Z9935

Carrier Tape

Cover Tape

Trailer Tape 640mm minimum or 80 empty pockets

Components

Leader Tape 1680mm minimum or 210 empty pockets

July 1999, Rev. A

TO-252 Tape and Reel Data and Package Dimensions

D-PAK (TO-252) Embossed Carrier Tape Co nfi guratio n: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

P1

D1

User Direction of Feed

Dimensions are in millimeter

Pkg ty pe

TO252

(24mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

D-PAK (TO-252) Reel Configuration: Figure 4.0

Dim A

max

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc T c

6.90

10.50

16.0

1.55

1.5

1.75

14.25

+/-0.10

10 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

+/-0.3

+/-0.05

+/-0.10

B0

Sketch B (Top View)

Component Rotation

min

7.50 +/-0.10

10 deg maximum

A0

W1 Measured at Hub

Dim N

8.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

Dim D

min

4.0 +/-0.1

2.65

0.30 +/-0.05

13.0 +/-0.3

0.9mm maximum

+/-0.10

0.9mm maximum

Sketch C (Top View)

Component lateral movement

B Min

Dim C

0.06 +/-0.02

Tape Size

164mm 13" Dia

Reel

Option

DETAIL AA

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

13.00

0.059

1.5

512 +0.020/-0.008 13 +0.5/-0.2

330

0.795

20.2

4.00 100

0.646 +0.078/-0.000

16.4 +2/0

0.882

22.4

0.626 – 0.764

15.9 – 19.4

July 1999, Rev. A

TO-252 Tape and Reel Data and Package Dimensions

TO-252 (FS PKG Code AA)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.300

September 1999, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™

2

E

CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench



QFET™ QS™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. D