Datasheet FDD306P Datasheet (Fairchild)

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° C

FDD306P P-Channel 1.8V Speciﬁed PowerTrench

January 2005

FDD306P P-Channel 1.8V Speciﬁed PowerTrench

MOSFET

Features

–6.7 A, –12 V. R R

Fast switching speed

High performance trench technology for extremely low R

DS(ON)

High power and current handling capability

Absolute Maximum Ratings

DS(ON)

= 28 m Ω @ V = 41 m Ω @ V = 90 m Ω @ V

TO-252

= –4.5 V

= –2.5 V

= –1.8 V

=25°C unless otherwise noted

Applications

DC/DC converter

General Description

This P-Channel 1.8V Speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management.

Symbol Parameter Ratings Units

DSS

GSS

, T

STG

Thermal Characteristics

Drain-Source Voltage –12 V

Gate-Source Voltage

Drain Current – Continuous (Note 3) –6.7 A

– Pulsed (Note 1a) –54

Power Dissipation for Single Operation (Note 1) 52 W

(Note 1a) 3.8

(Note 1b) 1.6

Operating and Storage Junction Temperature Range –55 to +175

Thermal Resistance, Junction-to-Case (Note 1) 2.9

Thermal Resistance, Junction-to-Ambient (Note 1a) 40

Thermal Resistance, Junction-to-Ambient (Note 1b) 96

C/W

MOSFET

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD306P FDD306P 13’’ 12mm 2500 units

FDD306P Rev. C

www.fairchildsemi.com

Page 2

∆

Electrical Characteristics

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆ T

DSS

GSSF

On Characteristics (Note 2)

GS(th)

∆ T

DS(on)

D(on)

Dynamic Characteristics

iss

oss

rss

Switching Characteristics (Note 2)

d(on)

d(off)

Drain–Source Diode Characteristics and Maximum Ratings

Tr r Diode Reverse Recovery Time IF = –6.7 A,

Irm Diode Reverse Recovery Current 0.9 A

Qrr Diode Reverse Recovery Charge 17 nC

Notes:

1. R R

Drain–Source Breakdown Voltage V

Breakdown Voltage Temperature Coefﬁcient I

DSS

Zero Gate Voltage Drain Current V

Gate–Body Leakage V

Gate Threshold Voltage V

Gate Threshold Voltage Temperature Coefﬁcient

Static Drain–Source On–Resistance

On–State Drain Current V

Forward Transconductance V

Input Capacitance V

Output Capacitance 590 pF

= 0 V, I

= –250 µ A, Referenced to 25 ° C –0.6 mV/ ° C

= –10 V, V

= ± 8V, V

= V

= –250 µ A, Referenced to 25 ° C 2.2 mV/ ° C

= –4.5 V, I

= –2.5 V, I

= –1.8 V, I

= –4.5 V, I

= –4.5 V, V

= –5 V, I

= –6 V, V

f = 1.0 MHz

= –250 µ A –12 V

= 0 V –1

= 0 V

, I

= –250 µ A –0.4 –0.5 –1.5 V

= –6.7 A

= –6.1 A

= –4.8 A

= –6.7A, T

= –5 V –45 A

= –6.7 A 22 S

= 0 V,

= 125 ° C

21 29 42 25

1290 pF

100 nA

28 41 90

m Ω

Reverse Transfer Capacitance 430 pF

Gate Resistance V

Tu r n–On Delay Time V

Tu r n–On Rise Time 816ns

= 15 mV, f = 1.0 MHz 4.2

= –6 V, I

= –4.5 V, R

= –1 A,

GEN

= 6 Ω

16 29 ns

Tu r n–Off Delay Time 34 54 ns

Tu r n–Off Fall Time 41 65 ns

Total Gate Charge V

Gate–Source Charge 2.0 nC

= –6V, I = –4.5 V

= –6.7 A,

15 21 nC

Gate–Drain Charge 4.4 nC

Maximum Continuous Drain–Source Diode Forward Current –3.2 A

Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V

37 ns

diF/dt = 100 A/µs (Note 3)

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins.

is guaranteed by design while R

is determined by the user's board design.

a) R

= 40°C/W when mounted

θJA

pad of 2 oz copper

on a 1in

b) R

= 96°C/W when mounted on a

θJA

minimum pad.

Ω

FDD306P P-Channel 1.8V Speciﬁed PowerTrench

MOSFET

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%

3. Maximum current is calculated as: where P

4. Starting T

= 25°C, L = TBD, I

= -6.7A

-----------------------R

DS ON()

FDD306P Rev. C

is maximum power dissipation at T

= 25°C and R

DS(on)

is at T

J(max)

and V

= 10V.

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Page 3

Typical Characteristics

FDD306P P-Channel 1.8V Speciﬁed PowerTrench

VGS = -4.5V

-3.5V

-3.0V

-4.0V

-2.5V

, DRAIN CURRENT (A)

-I

-2.0V

-1.8V

01234

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

1.4

ID = -6.7A

= -4.5V

1.3

1.2

1.1

, NORMALIZED

DS(ON)

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

2.5

VGS = -1.8V

1.5

, NORMALIZED

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

-2.0V

-2.5V

-3.0V

-3.5V

-4.5V

0.5 091827 36 45 54

-ID, DRAIN CURRENT (A)

Drain Current and Gate Voltage.

0.1

ID = -3.4A

0.08

0.06

0.04

, ON-RESISTANCE (OHM)

TA = 25°C

0.02

DS(ON)

0246810

TA = 125°C

-VGS, GATE TO SOURCE VOLTAGE (V)

MOSFET

Figure 3. On-Resistance Variation

withTemperature.

VDS = - 5V

, DRAIN CURRENT (A)

-I

01234

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55°C

125°C

25°C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

-I

0.0001

TA = 125°C

25°C

-55°C

0 0.2 0.4 0.6 0.8 1 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

with Source Current and Temperature.

FDD306P Rev. C

3 www.fairchildsemi.com

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Typical Characteristics

FDD306P P-Channel 1.8V Speciﬁed PowerTrench

ID = -6.7A

= -4V

-8V

-6V

, GATE-SOURCE VOLTAGE (V)

-V

0481216 20

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

100

LIMIT

DS(ON)

10s

100ms

0.1

VGS =-4.5V

SINGLE PULSE

= 96oC/W

= 25oC

, DRAIN CURRENT (A)

-I

0.01

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

10ms

1ms

2400

2000

f = 1MHz

= 0 V

1600

iss

1200

800

CAPACITANCE (pF)

400

rss

oss

036912

-VDS, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE

= 96°C/W

= 25°C

P(pk), PEAK TRANSIENT POWER (W)

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

MOSFET

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

(t) = r(t) * R

0.2

0.1

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.01

SINGLE PULSE

= 96 °C/W

P(pk)

- TA = P * R

Duty Cycle, D = t

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

(t)

1 /t2

FDD306P Rev. C

4 www.fairchildsemi.com

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™

FPS™

CoolFET™

CROSSVOLT

™ DOME™ EcoSPARK™

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY



FAST FASTr™

LittleFET™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™

C™

i-Lo

™

ImpliedDisconnect™



IntelliMAX™ ISOPLANAR™

MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC



OPTOPLANAR™ PACMAN™

POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench

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QFET

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SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET



UniFET™ VCX™



FDD306P P-Channel 1.8V Speciﬁed PowerTrench

MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

FDD306P Rev. C

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I15

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