Datasheet FDD2570 Datasheet (Fairchild Semiconductor)

FDD2570

150V N-Channel PowerTrench



MOSFET

FDD2570

February 2001

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controller s .

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifications.

R

DS(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

Features

• 4.7 A, 150 V. R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability.

= 80 mΩ @ VGS = 10 V

DS(ON)

= 90 mΩ @ VGS = 6 V

R

DS(ON)

D

D

G

S

G

TO-252

S

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 150
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 4.7
Drain Current – Pulsed 30
Maximum Power Dissipation @ TC = 25°C (Note 1)
@ TA = 25°C (Note 1a)
@ TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range -55 to +150

±20

70

3.2

1.3

V
V
A

W

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case (Note 1) 1.8
Thermal Resistance, Junction-to-Ambient (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD2570 FDD2570 13’’ 16mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDD2570 Rev C(W)

FDD2570

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current

VDD = 75 V, ID = 4.7 A 375 mJ

4.7 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

150 V

150

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

V

= 10 V, ID = 4.7 A

GS

= 6 V, ID = 4.5 A

V

GS

= 10 V, ID = 4.7 A, T

V

GS

J =

125°C

On–State Drain Current VGS = 10 V, VDS = 10 V 30 A
Forward Transconductance VDS = 10 V, ID = 6.3 A 20 S

22.64 V
–7

60
63

120

80
90

158

mV/°C

mΩ

Dynamic Characteri stics

C

iss

C

oss

C

rss

Input Capacitance 1907 pF
Output Capacitance 117 pF
Reverse Transfer Capacitance

V

= 75 V, V

DS

f = 1.0 MHz

GS

= 0 V,

33 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 12 19 ns
Turn–On Rise Time 7 14 ns

V

= 75 V, ID = 1 A,

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Turn–Off Delay Time 41 65 ns
Turn–Off Fall Time
Total Gate Charge 39 62 nC
Gate–Source Charge 7 nC

V

= 75 V, ID = 4.7 A,

DS

= 10 V

V

GS

Gate–Drain Charge

21 34 ns

9nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain–Source Diode Forward Current 2.7 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

θJC

a) R

= 40oC/W when

θJA

mounted on a 1in2 pad of
2oz copper.

is determined by the user's board design.

θCA

= 0 V, IS = 2.7 A (Note 2) 0.7 1.2 V

V

GS

b) R

= 96oC/W on a

θJA

minimum mounting pad.

FDD2570 Rev C(W)

Typical Characteristics

FDD2570

30

25

20

15

10

5

0

012345

VGS = 10V

5.0V

V

4.5V

, DRAIN-SOURCE VOLTAGE (V)

DS

4.0V

3.5V

1.6

VGS =

1.4

1.2

1

0.8
0 5 10 15 20 25 30

4.5V

5.0V

I

, DRAIN CURRENT (A)

D

10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.6
ID = 4.7 A

2.2

V

= 10 V

GS

1.8

1.4

1

0.6

0.16

0.12

0.08

0.2

TA = 125oC

TA = 25oC

ID = 2.2 A

0.2

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation with

Temperature.

15

VDS = 10 V

12

9

6

3

0

22.533.544.5

V

GS

TA = 125oC

25oC

-55oC

, GATE TO SOURCE VOLTAGE (V)

0.04
345678910

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

0.0001
0 0.2 0.4 0.6 0.8 1

TA = 125oC

25oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD2570 Rev C(W)

Typical Characteristics

)

FDD2570

10

ID = 4.7 A

8

VDS = 25 V

50 V

75

3000

2500

2000

C

ISS

6

1500

4

2

0

0 10203040

Q

, GATE CHARGE (nC)

g

1000

C

RSS

500

C

OSS

0

0 102030405060708090100

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10

0.1

0.01

0.001

R

DS(ON)

1

SINGLE PULSE

R

LIMIT

VGS = 10V

= 96oC/W

θ

JA

= 25oC

T

A

100ms
1s

DC

10ms

100us

1ms

0.1 1 10 100 1000

V

, DRAIN-SOURCE VOLTAGE (V)

DS

80

60

SINGLE PULSE

R

θ

JA

T

40

20

0

0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

f = 1MHz

= 0 V

V

GS

= 96 °C/W

= 25°C

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE

θ

R

(t) = r(t) + R

JA

θ

R

= 96 °C/W

JA

P(pk

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

θ

JA

0.001

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD2570 Rev C(W)

θ

JA

(t)

/ t

1

2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™

PowerTrench



QFET™
QS™
QT Optoelectronics™

Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8



SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G