Datasheet FDD2512 Datasheet (Fairchild Semiconductor)

FDD2512

150V N-Channel PowerTrench



MOSFET

FDD2512

August 2001

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controllers. These MOSFETs feature
faster switching and lower gate charge than other
MOSFETs with comparable R
result is a MOSFET that is easy and safer to drive

specifications. The

DS(ON)

Features

• 6.7 A, 150 V R
R

• Low gate charge (8nC typical)

• Fast switching

= 420 mΩ @ VGS = 10 V

DS(ON)

= 470 mΩ @ VGS = 6 V

DS(ON)

(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

• High performance trench technology for extremely

low R

DS(ON)

.

D

D

G

S

G

TO-252

S

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 150 V
Gate-Source Voltage

±20

Drain Current – Continuous (Note 3) 6.7 A

– Pulsed (Note 1a) 20

Power Dissipation (Note 1) 42

(Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range

3.8

1.6

−55 to +175 °C

V

W

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction-to-Case (Note 1) 3.5
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD2512 FDD2512 13’’ 16mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W
°C/W

FDD2512 Rev B2(W)

FDD2512

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)

W

DSS

I

AR

Drain-Source Avalanche Energy Single Pulse,VDD = 75 V, ID = 2.2A 90 mJ
Drain-Source Avalanche Current 2.2 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

= 0 V, ID = 250 µA

V

GS

ID = 250 µA, Referenced to 25°C

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

150 V

147

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 2.2 A

= 6 V, ID = 2.0 A

V

GS

= 10 V, ID = 2.2 A,TJ = 125°C

V

GS

On–State Drain Current VGS = 10 V, VDS = 10 V 5 A
Forward Transconductance VDS = 10 V, ID = 2.2 A 6.5 S

22.64 V
–5.6

307
322
606

420
470
870

mV/°C

mΩ

Dynamic Characteristics

V

C

iss

C

oss

C

rss

Input Capacitance 344 pF
Output Capacitance 22 pF
Reverse Transfer Capacitance

= 75 V, V

DS

f = 1.0 MHz

GS

= 0 V,

9pF

Switching Characteristics (Note 2)

V

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

Turn–On Delay Time 6.5 13 ns
Turn–On Rise Time 3.5 7 ns
Turn–Off Delay Time 22 33 ns
Turn–Off Fall Time

g

gs

gd

Total Gate Charge 8 11 nC
Gate–Source Charge 1.5 nC
Gate–Drain Charge

= 75 V, ID = 1 A,

DD

V

= 10 V, R

GS

V

= 75 V, ID = 2.2 A,

DS

= 10 V

V

GS

GEN

= 6 Ω

48ns

2.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 3.2 A
Drain–Source Diode Forward

VGS = 0 V, IS = 3.2 A (Note 2) 0.8 1.2 V

Voltage

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

a) R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

P

D

3. Maximum current is calculated as:
is maximum power dissipation at TC = 25°C and R

where P

D

R

)ON(DS

= 40°C/W when mounted on a

θJA

2

pad of 2 oz copper

1in

is at T

DS(on)

J(max)

b) R

θJA

on a minimum pad.

and VGS = 10V. Package current limitation is 21A

= 96°C/W when mounted

FDD2512 Rev B2(W)

Typical Characteristics

)

E

FDD2512

8

VGS =10V

6

4

, DRAIN CURRENT (A

2

D

I

0

6.0V

0246810

V

4.5V

, DRAIN-SOURCE VOLTAGE (V)

DS

4.0V

1.4

1.3

VGS = 4.0V

4.5V

5.0V

6.0V

01234

, DRAIN CURRENT (A)

I

D

, NORMALIZED

DS(ON)

R

1.2

1.1

1

DRAIN-SOURCE ON-RESISTANCE

0.9

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.6
ID = 2.2A

2.2

V

= 10V

GS

1.8

1.4

, NORMALIZED

1

DS(ON)

R

0.6

DRAIN-SOURCE ON-RESISTANC

0.2

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEM P E RATURE (oC)

T

J

0.8

0.7

0.6

0.5

0.4

, ON-RESISTANCE (OHM)

DS(ON)

0.3

R

TA = 25oC

0.2
345678910

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

10V

ID = 1A

Figure 3. On-Resistance Variation with

Temperature.

8

VDS = 25V

6

4

, DRAIN CURRENT (A)

D

2

I

0

23456

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001

00.20.40.60.811.2

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD2512 Rev B2(W)

Typical Characteristics

E

FDD2512

10

ID = 2.2A

8

6

4

2

, GATE-SOURCE VOLTAGE (V )

GS

V

0

0123456789

, GATE CHARGE (nC)

Q

g

VDS = 50V

100V

75V

500

400

300

200

CAPACITANCE (pF)

100

C

0

0 255075100125150

C

ISS

C

OSS

RSS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

100µs

100ms

1s

10ms

1ms

10

R

LIMIT

DS(ON)

1

, DRAIN CURRENT (A)

D

I

0.1

0.01

0.001

VGS = 10V

SINGLE PULSE

R

= 96oC/W

θ

JA

T

= 25oC

A

0.1 1 10 100 1000

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

DC

100

80

60

40

20

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

t1, TIME (sec)

f = 1MHz

V

= 0 V

GS

SINGLE PULSE

=96°C/W

R

θ

JA

= 25°C

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

(t) = r(t) + R

r(t), NORMALIZED EFFECTIVE

0.1

0.01

TRANSIENT THERMAL RESISTANC

0.001

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

θJA

R

JA

θ

P(pk)

T

- TA = P * R

J

Duty Cycle, D = t

= 96 °C/W

t

1

t

2

θJA

θJA

(t)

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD2512 Rev B2(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4