Datasheet fdc697p Datasheet

January 2004

FDC697P

P-Channel 1.8V PowerTrench MOSFET

FDC697P

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.

Applications

• Battery management

• Load Switch

• Battery protection

G

S

TM

SuperSOT-6

FLMP

Absolute Maximum Ratings T

S

o

=25

C unless otherwise noted

A

Features

• –8 A, –20 V R

• High performance trench technology for extremely

low R

• Fast switching speed

• FLMP SuperSOT-6 package: Enhanced thermal

performance in industry-standard package size

DS(ON)

= 20 mΩ @ VGS = –4.5 V

DS(ON)

= 25 mΩ @ VGS = –2.5 V

R

DS(ON)

= 35 mΩ @ VGS = –1.8 V

R

DS(ON)

1

2

3

Bottom Drain

6 5

4

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –8 A

– Pulsed –40

PD

TJ, T

STG

Power Dissipation (Note 1a) 2

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

±8

1.5

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 60

(Note 1b)

0.5

111

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2004 Fairchild Semiconductor Corpora tion

.697 FDC697P 7’’ 8mm 3000 units

°C/W

FDC697P Rev C2 (W)

FDC697P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage

GSS

Breakdown Voltage Temperature Coefficient

J

= 0 V, ID = –250 µA

V

GS

= – 250 µA, Referenced to 25°C

I

D

= ±8 V, VDS = 0 V

V

GS

–20 V

–12.2

mV/°C

µA

±100

nA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = –250 µA

V

DS

I

= – 250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –8 A

= –2.5 V, ID = –6.8 A

V

GS

V

= –1.8 V, ID = –5.8 A

GS

V

= –4.5 V, ID = –8 A, TJ =125°C

GS

gFS Forward Transconductance VDS = –5 V, ID = –8 A 37 S

–0.4 –0.8 –1.5 V

2.9

13

18 26 16

20 25 35 27

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 3524 pF

iss

C

Output Capacitance 544 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.8

V

= – 10 V, V

DS

f = 1.0 MHz

= 0 V,

GS

254 pF

Ω

Switching Characteristics (Note 2)

= –10 V, ID = –1 A,

t

Turn–On Delay Time 18 32 ns

d(on)

tr Turn–On Rise Time 6 12 ns

t

Turn–Off Delay Time 119 190 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 39 55 nC

Qgs Gate–Source Charge 6 8.4 nC

Qgd Gate–Drain Charge

V

DD

= –4.5 V, R

V

GS

= –10 V, ID = –8 A,

V

DS

= –4.5 V

V

GS

GEN

= 6 Ω

43 69 ns

5.6 7.8 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.6 A

VSD

trr Reverse Recovery Time 27 ns

Qrr Reverse Recovery Charge

Notes: 1. R

surface of the drain pins. R

Drain–Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

θJA

is guaranteed by design while R

θJC

a) 60°C/W when

mounted on a 1in of 2 oz copper

= 0 V, IS = –1.6 A (Note 2) –0.7 –1.2 V

V

GS

= –8 A,

I

F

d

= 100 A/µs

iF/dt

is determined by the user's board design.

θCA

2

pad

16 nC

b) 111°C/W when mounted

on a minimum pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDC697P Rev C2 (W)

Dimensional Outline and Pad Layout

Bottom View

FDC697P

Top View

Recommended Landing Pattern

FDC697P Rev C2 (W)

–

,

)

Typical Characteristics

FDC697P

40

VGS = –4.5V

30

20

, DRAIN CURRENT (A)

10

D

-I

0

–3V

2.5V

–1.8V

00.511.52

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

3

2.5 VGS = -1.8V

2

, NORMALIZED

1.5

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.5

0 10203040

-2.5V

-3.0V

DRAIN CURRENT (A

-I

-3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -8A

V

= -4.5V

GS

1.2

, NORMALIZED

1

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation

withTemperature.

0.05

0.045

0.04

0.035

0.03

0.025

0.02

, ON-RESISTANCE (OHM)

R

DS(ON)

0.015

0.005

TA = 25oC

0.01

12345

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

ID = -4 A

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

-4.5V

40

VDS = -5V

30

20

, DRAIN CURRENT (A)

D

10

-I

0

0.511.522.5

-V

TA = 125oC

25oC

-55oC

, GATE TO SOURCE VOLTAGE (V)

GS

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC697P Rev C2 (W)

Typical Characteristics

FDC697P

5

ID = -8A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 1020304050

Q

, GATE CHARGE (nC)

g

VDS = -5V

-10V

-15V

5000

4500

4000

3500

3000

2500

2000

1500

CAPACITANCE (pF)

1000

500

0

0.0 5.0 10.0 15.0 20.0

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C

ISS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1s

1

, DRAIN CURRENT (A)

D

-I

VGS = -4.5V

SINGLE PULSE

0.1

0.01

= 100oC/W

R

JA

θ

T

= 25oC

A

0.1 1 10 100

-V

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

DS

1ms

10ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

SINGLE PULSE

R

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1MHz

= 0 V

V

GS

= 100°C/W

JA

θ

T

= 25°C

A

1

D = 0.5

R

(t) = r(t) * R

r(t), NORMALIZED EFFECTIVE

0.01

TRANSIENT THERMAL RESISTANCE

0.001

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

JA

θ

R

= 100 °C/W

JA

θ

P(pk)

t

- TA = P * R

T

J

Duty Cycle, D = t

JA

θ

1

t

2

(t)

JA

θ

/ t

1

2

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDC697P Rev C2 (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™

FACT Quiet Series™



FAST FASTr™

FPS™

FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ImpliedDisconnect™

Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

ISOPLANAR™

LittleFET™

MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ P ACMAN™



POP™

Power247™

PowerTrench



QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART ST ART™ SPM™ Stealth™



SuperFET™

SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic



TINYOPTO™ TruTranslation™ UHC™



UltraFET



VCX™

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I7