Datasheet FDC658AP Datasheet (Fairchild)

FDC658AP

Single P-Channel Logic Level PowerTrench® MOSFET

-30V, -4A, 50m:

FDC658AP Single P-Channel Logic Level PowerTrench

November 2011

General Description

This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.

Applications

 Battery management

 Load switch

 Battery protection

 DC/DC conversion

Features

 Max r

 Max r

 Low Gate Charge

 High performance trench technology for extremely low

r

DS(on)

 RoHS Compliant

= 50 m: @ VGS = -10 V, ID = -4A

DS(on)

= 75 m: @ VGS = -4.5 V, ID = -3.4A

DS(on)

S

D

D

G

D

- Pulsed

D

TM

-6

= 25°C unless otherwise noted

A

PIN 1

SuperSOT

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain-Source Voltage -30 V

Gate-Source Voltage r25 V

Drain Current - Continuous -4

Maximum Power dissipation 1.6

Operating and Storage Junction Temperature Range -55 to +150 °C

1

2

3

(Note 1a)

(Note 1a)

(Note 1b)

6

5

4

-20

0.8

®

MOSFET

A

W

Thermal Characteristics

R

TJA

R

TJC

Thermal Resistance, Junction-to-Ambient 78 °C/W

Thermal Resistance, Junction-to-Case 30 °C/W

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.58A FDC658AP 7inch 8mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDC658AP Rev. B1

www.fairchildsemi.com1

FDC658AP Single P-Channel Logic Level PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(TH)

'V

GS(TH)

'T

J

r

DS(on)

I

D(ON)

g

FS

Drain-Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V

Breakdown Voltage Temperature
Coefficient

ID = -250PA,
Referenced to 25°C

-22 mV/°C

Zero Gate Voltage Drain Current VGS = 0V, VDS = -24V -1 PA

Gate-Body Leakage VGS = r25V, VDS = 0V r100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250PA-1-1.8-3V

Gate Threshold Voltage
Temperature Coefficient

Static Drain-Source On-Resistance

On-State Drain Current VGS = -10V, VDS = -5V -20 A

Forward Transconductance ID = -4A, VDS = -5V 8.4 S

ID = -250PA,
Referenced to 25°C

I

= -4A, VGS = -10V 44 50

D

= -3.4A, VGS = -4.5V 67 75

I

D

= -4A, VGS = -10V,

I

D

= 125°C

T

J

4 mV/°C

60 70

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 126 pF

Reverse Transfer Capacitance 61 pF

V

= -15V, VGS = 0V,

DS

f = 1MHz

470 pF

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time 12 22 ns

Turn-Off Delay Time 16 29 ns

= -15V, ID = -1A

V

DD

= -10V, R

V

GS

GEN

= 6:

714ns

Turn-Off Fall Time 6 12 ns

Total Gate Charge

Gate-Source Charge 2.1 nC

Gate-Drain Charge 2 nC

= -15V, ID = -4A,

V

DS

= -5V

V

GS

6 8.1 nC

m:

®

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

TJA

the drain pins. R

Scale 1: 1 on letter size paper

2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%

FDC658AP Rev. B1

Maximum Continuous Drain-Source Diode Forward Current -1.3 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2) -0.77 -1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

TJC

o

C/W when mounted on a

a) 78

2

1 in

pad of 2 oz copper

is determined by the user's board design.

TCA

b) 156oC/W whe mounted on a
minimum pad of 2 oz copper

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dsemi.com2

Typical Characteristics

FDC658AP Single P-Channel Logic Level PowerTrench

20

VGS = -10V

-6.0V

15

10

, DRAIN CURRENT (A)

D

5

-I

0

012345

Figure 1.

1.6

ID = -4.0A

V

GS

1.4

1.2

1

NORMALIZED

0.8

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

= -10V

2

1.8

VGS = -4.5V

1.6

1.4

NORMALIZED

1.2

1

DRAIN TO SOURCE ON-RESISTANCE

0.8
0 4 8 12 16 20

-5.0V

-6.0V

, DRAIN CURRENT (A)

-I

D

-7.0V

-8.0V

Normalized On-Resistance vs Drain
Current and Gate Voltage

0.22

0.18

0.14

TJ = 125oC

0.1

, DRAIN TO SOURCE

r

TJ = 25oC

ON RESISTANCE (OHM)

DS(on)

0.06

-10V

ID = -2.0A

®

MOSFET

DRAIN TO SOURCE ON-RESISTANCE

0.6

-50-250 255075100125150

Figure 3.

15

12

9

6

, DRAIN CURRENT (A)

D

-I

3

0

Figure 5. Transfer Characteristics

0.02

T

, JUNCTION TEMPERATURE (oC)

J

Normalized On-Resistance vs Junction

Figure 4.

Temperature

10

125oC

25oC

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001

1

0.1

0.01

VDS = -5V

12345

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TJ = -55oC

Figure 6.

246810

, GATE TO SOURCE VOLTAGE (V)

-V

GS

On-Resistance vs Gate to Source

Voltage

VGS = 0V

TJ = 125oC

25oC

-55oC

00.20.40.60.811.2

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

Source to Drain Diode Forward Voltage

vs Source Current

FDC658AP Rev. B1

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dsemi.com3

Typical Characteristics

FDC658AP Single P-Channel Logic Level PowerTrench

10

ID = -4A

VDS = -5V

8

-15V

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0246810

, GATE CHARGE (nC)

Q

g

Figure 7.

Gate Charge Characteristics Figure 8.

100

r

LIMIT

DS(on)

10

100us

1ms

10ms

100ms

1s

DC

, DRAIN CURRENT (A)

D

0.1

-I

1

SINGLE PULSE
R

VGS = -10V

= 156oC/W

JA

T

= 25oC

A

0.01

0.1 1 10 100

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 9.

Forward Bias Safe Operating Area Figure 10.

-10V

600

C

iss

450

300

C

oss

CAPACITANCE (pF)

150

C

rss

0

0 6 12 18 24 30

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

f = 1 MHz
V

= 0 V

GS

Capacitance vs Drain to Source Voltage

10

SINGLE PULSE

R

= 156°C/W

8

6

4

2

P(pk), PEAK TRANSIENT POW ER (W)

0

0.01 0.1 1 10 100

t, PULSE WIDTH (s)

JA

T

= 25°C

A

Single Pulse Maximum Power

Dissipation

®

MOSFET

1

D = 0. 5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t, RECTANGULAR PULSE DURATION

Figure 11.

Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

FDC658AP Rev. B1

Transient thermal response will change depending on the circuit board design.

R

(t) = r(t) x R

JA

R

= 156oC/W

JA

P(pk )

- TA = P x R

T

J

Du

ty Cycle, D = t

t

1

t

2

www.fairchil

JA

(t)

JA

/ t

1

2

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Rev. I58