Datasheet FDC640P Datasheet (Fairchild)

FDC640P

P-Channel 2.5V PowerTrench



Specified MOSFET

FDC640P

January 2001

General Description

This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).

Applications

• Battery management

• Load switch

• Battery protection

Features

• –4.5 A, –20 V R

• Rugged gate rating (±12V)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

= 0.053 Ω @ VGS = –4.5 V

DS(ON)

R

= 0.080 Ω @ VGS = –2.5 V

DS(ON)

S

D

D

1
2

6
5

G

SuperSOT -6

TM

D

D

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

3

4

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

D

TJ, T

STG

Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –4.5 A

– Pulsed –20

Maximum Power Dissipation (Note 1a) 1.6 WP

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

±12

0.8

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 30

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.640 FDC640P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor International

°C/W
°C/W

FDC640P Rev E(W)

FDC640P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA, Referenced to 25°C

D

–20 V

–14

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = –250 µA

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –4.5 A

= –2.5 V, ID = –3.6 A

V

GS

= –4.5 V, ID = –4.5A,TJ=125°C

V

GS

–0.6 –1.0 –1.5 V

3

0.039

0.062

0.053

On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A
Forward Transconductance VDS = –5 V, ID = –4.5 A 16 S

mV/°C

0.053

0.080

0.077

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 890 pF
Output Capacitance 244 pF
Reverse Transfer Capacitance

= –10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

123 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 12 22 ns
Turn–On Rise Time 9 18 ns

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 24 38 ns
Turn–Off Fall Time
Total Gate Charge 9 13 nC
Gate–Source Charge 2 nC

V

= –10 V, ID = –4.5 A,

DS

= –4.5 V

V

GS

Gate–Drain Charge

13 23 ns

3nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

pins. R

a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain–Source Diode Forward Current –1.3 A
Drain–Source Diode Forward

VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

is guaranteed by design while R

θJC

2

pad of 2oz copper on FR-4 board.

is determined by the user's board design.

θCA

µA

Ω

FDC640P Rev E(W)

Typical Characteristics

)

FDC640P

15

VGS = -4.5V

-3.5V

12

9

6

, DRAIN CURRENT (A)

D

-I

3

0

00.511.522.5

-3.0V

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

-2.5V

-2.0V

3

VGS = -2.0V

2.5

2

, NORMALIZED

1.5

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.5
03691215

-2.5V

-3.0V

, DRAIN CURRENT (A)

-I

D

-3.5V

-4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5
ID = -4.5 A

1.4

= -4.5 V

V

GS

1.3

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.16

0.14

0.12

0.1

0.08

, ON-RESISTANCE (OHM)

0.06

DS(ON)

R

TA = 25oC

0.04

0.02

1.522.533.544.55

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

ID = -2.25 A

Figure 3. On-Resistance Variation with

Temperature.

12

VDS = -5V

10

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

0.511.522.53

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC640P Rev E(W)

Typical Characteristics

)

FDC640P

5

ID = -4.5A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

024681012

Q

g

VDS = -5V

, GATE CHARGE (nC)

-10V

-15V

1200

1000

800

600

400

CAPACITANCE (pF)

200

0

0 5 10 15 20

C

ISS

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOL TAG E (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10ms

100µs

1ms

R

LIMIT

DS(ON)

10

100ms

1

VGS = -4.5V

, DRAIN CURRENT (A)

SINGLE PULSE

D

0.1

-I

0.01

= 156oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100

, DRAIN-SOURCE VO LTAGE (V)

-V

DS

1s

10s

DC

5

SINGLE PULSE
R

θ

4

3

2

1

P(pk), PEAK TRANSIENT POWER (W)

0

0.1 1 10 100 1000

, TIME (sec)

t

1

JA

T

f = 1MHz

V

GS

= 156°C/W

= 25°C

A

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

(t) = r(t) + R

0.2

0.1

0.01

r(t), NORMALIZED EFF E CT IVE

TRANSIENT THERMAL RESISTANCE

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE

θJA

R

= 156°C/W

JA

θ

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.

θJA

(t)

JA

θ

/ t

1

2

FDC640P Rev E(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™

PowerTrench



QFET™
QS™
QT Optoelectronics™

Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8



SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G