Datasheet FDC6401N Datasheet (Fairchild)

FDC6401N

FDC6401N

Dual N-Channel 2.5V Specified PowerTrench MOSFET

October 2001

General Description

This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

• Battery Protection

• Power Management

Features

• 3.0 A, 20 V. R

• Low gate charge (3.3 nC)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

= 70 mΩ @ VGS = 4.5 V

DS(ON)

R

= 95 mΩ @ VGS = 2.5 V

DS(ON)

D2

D1

S1

4

5

3

2

G2

SuperSOT -6

TM

S2

G1

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

6

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 3.0 A

– Pulsed 12

Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range –55 to +150

±12

0.9

0.7

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 130
Thermal Resistance, Junction-to-Case (Note 1) 60

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.401 FDC6401N 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDC6401N Rev C (W)

Electrical Characteristics T

FDC6401N

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 13 mV/°C

20 V

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V 100 nA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C

VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 2.5 A
VGS = 4.5 V, ID = 3.0 A,TJ=125°C

0.5 0.9 1.5 V
–3 mV/°C

50
66
71

On–State Drain Current VGS = 4.5 V, VDS = 5 V 12 A
Forward Transconductance VDS = 5V, ID = 3.0 A 10 S

70
95

106

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 324 pF
Output Capacitance 82 pF
Reverse Transfer Capacitance

VDS = 10 V, V
f = 1.0 MHz

GS

= 0 V,

42 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

Turn–On Delay Time 5 10 ns
Turn–On Rise Time 7 14 ns
Turn–Off Delay Time 13 23 ns
Turn–Off Fall Time

g

gs

gd

Total Gate Charge 3.3 4.6 nC
Gate–Source Charge 0.95 nC
Gate–Drain Charge

VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R

GEN

= 6 Ω

VDS = 10 V, ID = 3.0 A,
VGS = 4.5 V

1.6 3 ns

0.7 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 0.8 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

θJC

θCA

VGS = 0 V, IS = 0.8 A (Note 2) 0.7 1.2 V

is determined by the user's board design.

µA

mΩ

a) 130 °C/W when

mounted on a 0.125
in2 pad of 2 oz.
copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 140 °C/W when

mounted on a .004 in
pad of 2 oz copper

2

c) 180 C°/W when mounted on a

minimum pad.

FDC6401N Rev C (W)

Typical Characteristics

I

D

, DRAIN CURRENT (A)

2.5V

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

, DRAIN CURRENT (A)
I

S

, REVERSE DRAIN CURRENT (A)

FDC6401N

12

VGS = 4.5V

10

3.5V

8

6

4

2

0

0 1 2 3

3.0V

2.0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

2

VGS = 2.0V

1.8

1.6

1.4

1.2

R

1

0.8
0 2 4 6 8 10 12

2.5V

3.0V

ID, DIRAIN CURRENT (A)

3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = 3.0A

VGS = 4.5V

1.4

1.2

1

R

0.8

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.22

0.18

0.14

0.1

0.06

TA = 25oC

0.02
1 2 3 4 5

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

4.5V

ID = 1.5A

Figure 3. On-Resistance Variation with

Temperature.

10

VDS = 5V

8

6

4

2

0

0.5 1 1.5 2 2.5 3

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6401N Rev C (W)

Typical Characteristics

V

, GATE-SOURCE VOLTAGE (V)

CAPACITANCE (pF)

I

D

, DRAIN CURRENT (A)

100µs

1ms

P(pk), PEAK TRANSIENT POWER (W)

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

P(pk)

FDC6401N

5

ID = 3A VDS = 5V

4

3

2

1

GS

0

0 1 2 3 4

Qg, GATE CHARGE (nC)

15V

10V

450

360

270

180

90

0

C

C

RSS

0 5 10 15 20

C

ISS

OSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

10ms

1

VGS = 4.5V

SINGLE PULSE

0.1
R

= 180oC/W

θ

JA

TA = 25oC

0.01

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

100ms

1s

DC

10

8

6

4

2

0

0.01 0.1 1 10 100 1000

t1, TIME (sec)

SINGLE PULSE

R

= 180°C/W

θ

JA

TA = 25°C

f = 1 MHz
VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01

R

(t) = r(t) * R

θJA

R

= 180°C/W

θJA

t

1

t

2

TJ - TA = P * R

θ

Duty Cycle, D = t1 / t

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDC6401N Rev C (W)

θJA

(t)

JA

2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4