Datasheet FDC637AN Datasheet (Fairchild)

FDC637AN

Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

FDC637AN

November 1999

General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Applications

• DC/DC converter

• Load switch

• Battery Protection

S

D

G

SuperSOT -6

TM

Absolute Maximum Ratings

D

TA = 25°C unless otherwise noted

Features

• 6.2 A, 20 V. R

R

= 0.024 Ω @ V

DS(on)

= 0.032 Ω @ V

DS(on)

= 4.5 V

GS

= 2.5 V

GS

• Fast switching speed.

• Low gate charge (10.5nC typical).

• High performance trench technology for extremely

low R

• SuperSOT

than standard SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

1

2

3

6

5

4

Symbol Parameter FDC637AN Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 V Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed 20 Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a) (Note 1b)

8

±

6.2 A

1.6 W

0.8

Thermal Characteristics

R

θ

JA

R

θ

JC

Thermal Resistance, Junction-to-Ambient Ther mal Resist ance, Junction-to-Case

(Note 1a) (Note 1)

78 30

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.637 FDC637AN 7’’ 8mm 3000 units

1999 Fairchild Semiconductor Corporation

V

C

°

C/W

°

C/W

°

FDC637AN, Rev. C

FDC637AN

Electrical Characteristics

Symbol Off Characteri st ics

BV

DSS

BV

∆

T

∆

I

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

DSS

Coefficient

J

Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

On Characteristics

V

Gate Threshold Voltage

GS(th)

∆ ∆

R

I

D(on)

V

GS(th)

T

DS(on)

Gate Threshold Voltage Temperature Coefficient

J

Static Drain-Source

On-Resistance

On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A

Parameter

(Note 2)

TA = 25°C unless otherwise noted

Test Conditions

V

= 0 V, ID = 250 µA

GS

= 250µA, Reference d to 25°C

I

D

V

= VGS, ID = 250 µA

DS

I

=250µA,Referenced to 125°C

D

VGS = 4.5 V,ID = 6.2 A V

= 4.5 V,ID = 6.2 A,TJ=125°C

GS

V

= 2.5 V, ID = 5.2 A

GS

Min

Typ Max Units

20 V

14

mV/°C

A

µ

0.4 0.82 1.5 V

-3

0.019

0.028

0.025

0.024

0.041

0.032

mV/°C

Ω

gFS Forward Transconductance VDS = 5 V, ID = 6.2 A 7.4 S

Dynamic Characteristics

C

Input Capacitance 1125 pF

iss

C

Output Capacitance 290 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics

t

Turn-On Delay Time 9 18 ns

d(on)

tr Turn-On Rise Time 13 24 ns t

Turn-Off Delay Time 26 42 ns

d(off)

tf Turn-Off Fall Time Qg Total Gate Charge 10.5 16 nC Qgs Gate-Source Charge 1.5 nC Qgd Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

V

= 10 V, VGS = 0 V,

DS

f = 1.0 MHz

145 pF

(Note 2)

V

= 10 V, ID = 1 A,

DD

V

= 4.5 V, R

GS

GEN

= 6 Ω

11 20 ns

V

= 5 V, ID = 6.2 A,

DS

V

= 4.5 V

GS

2.2 nC

IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A

0.7 1.2 V

(Note 2)

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

θJA

of the drain pins. R

a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

FDC637AN, Rev. C

T ypical Characteristics

FDC637AN

20

VGS= 4.5V

3.0V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

0 0.4 0.8 1.2 1.6 2

2.5V

2.0V

1.5V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

Figure 1. On-Region Characteristics.

1.5 ID= 6.2A

VGS= 4.5V

1.4

1.3

1.2

1.1

, NORMALIZED

1

DS(ON)

0.9

R

0.8

DRAIN-SOURCE ON- RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

2.5

2

VGS= 2.0V

1.5

, NORMALIZED

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.5 0 5 10 15 20

2.5V

3.0V

, DRAIN CURRENT (A)

I

D

4.5V

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

0.08 ID= 6.2A

0.06

0.04

TJ= 125oC

, ON RESISTANCE (OHM)

0.02

DS(ON)

R

0

12345

V

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

Figure 3. On-Resistance Variation

with Temperature.

20

VDS= 5V

15

10

, DRAIN CURRENT (A)

5

D

I

0

0.5 1 1.5 2 2.5

, GATE TO SOURCE VOLTAGE (V)

V

GS

TJ= -55oC

o

25

C

125oC

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

V

= 0

GS

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TJ= 125oC

25oC

-55oC

, BODY DIODE VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDC637AN, Rev. C

Typical Characteristics (continued)

)

FDC637AN

5

ID = 6.2A

4

VDS = 5V

10V

15V

3

1800

1500

1200

C

iss

900

2

1

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 2 4 6 8 10 12 14

, GATE CHARGE (nC)

Q

g

600

CAPACITANCE (pF)

300

0

0 5 10 15 20

V

, DRAIN TO SOURCE VO LTAGE (V)

DS

C

oss

C

rss

Figure 7. Gate-Charge Characteristics Figure 8. Capacitance Characteristics

100

10ms

100µs

1ms

R

LIMIT

DS(ON)

10

100ms

1s

DC

, DRAIN CURRENT (A)

D

I

1

0.1

VGS= 4.5V

SINGLE PULSE

= 156oC/W

R

JA

θ

T

= 25oC

A

0.01

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

5

4

3

2

POWER (W)

1

0

0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

f = 1MHz

= 0V

V

GS

SINGLE PULSE R

= 156oC/W

JA

θ

= 25oC

T

A

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

Power Dissipation

1

D = 0.5

0.5

0.2

0.1

0.05

0.02

r(t), NORMALIZED EFFECTIVE

0.01

TRANSIENT THERMAL RESISTANCE

0.005

0.00001 0.0001 0.001 0.01 0.1 1 10 100 300

0.05

0.02

0.01 Single Pulse

t , TIME (sec)

1

R (t) = r(t) * R

θ

JA

R = 156°C/W

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t

J

A

Duty Cycle, D = t / t

θ

JA

θ

JA

1 2

Figure 11. T ransient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

FDC637AN, Rev. C

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™

2

E

CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench



QFET™ QS™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. D