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FDC6305N
Dual N-Channel 2.5V Specified PowerTrench
TM
MOSFET
FDC6305N
March 1999
General Description
These N-Channel low threshold 2.5V specified
MOSFET s are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.
Applications
• Load switch
• DC/DC converter
• Motor driving
D2
S1
D1
G2
SuperSOT -6
TM
S2
G1
Features
• 2.7 A, 20 V. R
R
= 0.08 Ω @ V
DS(ON)
= 0.12 Ω @ V
DS(ON)
= 4.5 V
GS
= 2.5 V
GS
• Low gate charge (3.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
• SuperSOT
than standard SO-8); low profile (1mm thick).
.
DS(ON)
TM
-6 package: small footprint (72% smaller
4
5
6
3
2
1
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed 8
Power Dissipation for Single Operat i on
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
8V
±
2.7 A
0.96 W
0.9
0.7
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.305 FDC6305N 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation
C
°
C/W
°
C/W
°
FDC6305N, Rev. C
Page 2
FDC6305N
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA20 V
DSS
Breakdown Voltage Temperature
Coefficient
J
ID = 250 µA, Referenced to 25°C14mV/
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C-2.7mV/
VGS = 4.5, ID = 2.7 A
V
= 4.5 ID = 2.7 A, TJ = 125°C
GS
V
= 2.5 V, ID = 2.2 A
GS
On-State Drain Current VGS = 4.5 V, VDS = 5 V 6 A
Forward Transconductance VDS = 5 V, ID = 2.7 A 8 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 310 pF
Output Capacitance 80 pF
Reverse Transfer Capacitance
V
= 10 V, VGS = 0 V,
DS
f = 1.0 MHz
Max Units
0.080
0.060
0.128
0.095
0.120
0.085
40 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 5 15 ns
Turn-On Rise Time 8.5 17 ns
Turn-Off Delay Time 11 20 ns
Turn-Off Fall Time
Total Gate Charge 3.5 5 nC
Gate-Source Charge 0.55 nC
Gate-Drain Charge
V
= 10 V, ID = 1 A,
DD
V
= 4.5 V, R
GS
V
= 10 V, ID = 2.7 A,
DS
V
= 4.5 V
GS
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
of the drain pins. R
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source D i ode Forward Current 0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
is guaranteed by design while R
θJC
a) 130 °C/W when
mounted on a 0.125 in
pad of 2 oz. copper.
is determined by the user's board design. Both devices are assumed to be operating and
θCA
2
b) 140 °C/W when
mounted on a 0.005 in
pad of 2 oz. copper.
(Note 2)
2
310ns
0.95 nC
0.77 1.2 V
c) 180 °C/W on a minimum
mounting pad.
FDC6305N, Rev. C
Page 3
T ypical Characteristics
FDC6305N
10
VGS = 4.5V
3.5V
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
00.511.522.53
3.0V
2.5V
2.0V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
1.5V
Figure 1. On-Region Characteristics.
1.6
ID = 2.7A
V
= 4.5V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50-250 255075100125150
, JUNCTION TEMPERATURE (oC)
T
J
1.6
1.4
1.2
, NORMALIZED
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
0.8
VGS = 2.5V
3.0V
3.5V
4.0V
1
0246810
, DRAIN CURRENT (A)
I
D
4.5V
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.24
0.2
0.16
0.12
0.08
, ON-RESISTANCE (OHM)
DS(ON)
0.04
R
0
12345
, GATE TO SOURCE VOLTAGE (V)
V
GS
ID = 1.4A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = 5V
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
01234
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDC6305N, Rev. C
Page 4
Typical Characteristics (continued)
FDC6305N
5
ID = 2.7A
4
VDS = 5V
15V
10V
3
2
500
400
300
200
C
ISS
CAPACITANCE (pF)
1
, GATE-SOURCE VOLTAGE (V)
GS
V
0
00.511.522.533.54
, GATE CHARGE (nC)
Q
g
100
0
0 4 8 12 16 20
C
OSS
C
RSS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
10
R
DS(ON)
LIMIT
100µs
1ms
10ms
1
VGS = 4.5V
0.1
SINGLE PULSE
, DRAIN CURRENT (A)
D
I
0.01
= 180oC/W
R
θ
JA
o
TA = 25
C
0.1 1 10 100
V
DS
100ms
1s
DC
, DRAIN-SOURCE VOLTAGE (V)
5
4
3
2
POWER (W)
1
0
0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
f = 1MHz
V
= 0 V
GS
SINGLE PULSE
R
= 180oC/W
JA
θ
= 25oC
T
A
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
r(t), NORMALIZED EFFECTIVE
0.02
TRANSIENT THERMAL RESISTANCE
0.01
0.05
0.02
0.01
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)
1
R (t) = r(t) * R
θ
JA
R = 180°C/W
θ
JA
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t / t
θ
JA
θ
JA
2
1
Figure 11. T ransient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDC6305N, Rev. C
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
www.fairchildsemi.com
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