Datasheet fdc6020c Datasheet

November 2003

FDC6020C

Complementary PowerTrench MOSFET

FDC6020C

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor Driving

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Features

• Q1 –4.2 A, –20V. R

R

• Q2 5.9 A, 20V. R

R

• Low gate charge

• High performance trench technology for extremely

DS(ON)

.

Bottom Drain Contact

4

5

6

Bottom Drain Contact

low R

• FLMP SSOT-6 package: Enhanced thermal

performance in industry-standard package size

= 55 mΩ @ VGS = – 4.5 V

DS(ON)

= 82 mΩ @ VGS = – 2.5 V

DS(ON)

= 27 mΩ @ VGS = 4.5 V

DS(ON)

= 39 mΩ @ VGS = 2.5 V

DS(ON)

Q2 (N)

3

2

1

Q1 (P)

1

Symbol Parameter Q1 Q2 Units

V

Drain-Source Voltage –20 20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current - Continuous (Note 1a) –4.2 5.9 A

- Pulsed –20 20 PD Power Dissipation for Dual Operation (Note 1a) 1.6 W

Power Dissipation for single Operation (Note 1a) 1.8

TJ, T

STG

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

±12 ±12

1.2

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 68

(Note 1a) 1

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.020 FDC6020C 7’’ 8mm 3000 units

2003 Fairchild Semiconductor Corpora tion

°C/W

FDC6020C Rev B(W)

FDC6020C

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

∆BVDSS ∆T

I

Zero Gate Voltage Drain

DSS

Breakdown Voltage Temperature Coefficient

J

Current

I

Gate-Body Leakage VGS = +12 V, VDS = 0 V

GSS

VGS = 0 V, ID = –250 µA

= 0 V, ID = 250 µA

V

GS

= –250 µA, Referenced to 25°C

I

D

= 250 µA, Referenced to 25°C

I

D

VDS = –16 V, VGS = 0 V

= 16 V, VGS = 0 V

V

DS

= +12 V, VDS = 0 V

V

GS

Q2 Q1 Q2

Q1 Q2

–20

20

V

–14

12

–1

1

+

100 100

mV/°C

µA

nA

Q1

On Characteristics (Note 2)

Q1

–0.6

–1.0

V

Gate Threshold Voltage VDS = VGS, ID = –250 µA

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

V

= VGS, ID = 250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

= 250 µA, Referenced to 25°C

I

D

VGS = –4.5 V, ID = –4.2 A

= –2.5 V, ID = –3.4 A

V

GS

= –4.5 V, ID = –4.2 A,TJ =125°C

V

GS

= 4.5 V, ID = 5.9 A

GS

= 2.5 V, ID = 4.9 A

V

GS

= 4.5 V, ID = 5.9 A, TJ = 125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = – 4.2 A

= 5 V, ID = 5.9 A

V

DS

Q2 Q1 Q2

Q1

Q2

Q1 Q2

0.6 3

45

23

13

1.0

–3

65 58

33 31

23

–1.5

1.5 mV/°C

55

mΩ 82 73

27 39 39

S

Dynamic Characteristics

C

Input Capacitance Q1

iss

C

Output Capacitance Q1

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance

Q1:

= –10 V, VGS = 0 V,

V

DS

f = 1.0 MHz Q2:

= 10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

15mV, f = 1.0 MHz

V

GS =

Q2

Q2 Q1 Q2

753

677

163

171

83

91

pF

Q1 8

Q2 2.2

V

Ω

Switching Characteristics

t

Turn-On Delay Time

d(on)

tr Turn-On Rise Time

t

Turn-Off Delay Time

d(off)

tf Turn-Off Fall Time

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

Q1:

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

GEN

= 6 Ω

Q2:

= 10 V, ID = 1 A,

V

DD

= 4.5V, R

V

GS

GEN

= 6 Ω

Q1:

= –10 V,ID = –4.2 A,VGS= –4.5V

V

DS

Q2:

= 10 V, ID = 5.9 A,VGS = 4.5 V

V

DS

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

13

8

26

14 7 52

11

16

18

23 20 16 29 42 32

ns

14

7 6 10 8 nC

1.6

nC

1.5

1.9

nC

1.8

FDC6020C RevB (W)

FDC6020C

Electrical Characteristics (continued) T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q1

VSD Drain-Source Diode Forward

Voltage

trr Diode Reverse Recovery

Time

Qrr Diode Reverse Recovery

Charge

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

a) 68°C/W when

VGS = 0 V, IS = –1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2)

= – 4.2A,dIF/dt = 100 A/µs

I

F

IF = 5.9A, dIF/dt = 100 A/µs

= – 4.2A,dIF/dt = 100 A/µs

I

F

IF = 5.9A, dIF/dt = 100 A/µs

is determined by the user's board design.

θCA

mounted on a 1in2 pad of 2 oz copper (Single Operation).

Q2 Q1 Q2 Q1 Q2

Q1

–0.8

17

6 4

0.7

15

1.3

–1.2

1.2

Q2

–1.3

b) 102°C/W when mounted

on a minimum pad of 2 oz copper (Single Operation).

A

V

nS

nC

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDC6020C RevB (W)

Typical Characteristics : Q1

FDC6020C

20

VGS = -4.5V

-3.5V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

01234

-V

-3.0V

-2.5V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-2.0V

2.8

2.6 VGS= -2.0V

2.4

2.2

2

1.8

, NORMALIZED

1.6

1.4

DS(ON)

R

1.2

DRAIN-SOURCE ON-RESISTANCE

1

0.8

048121620

-2.5V

, DRAIN CURRENT (A)

-I

D

-3.0V

-3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.3

ID = -4.2A

= -4.5V

V

GS

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.16

0.14

0.12

0.1

0.08

, ON-RESISTANCE (OHM)

DS(ON)

R

TA = 25oC

0.06

0.04

1.522.533.544.55

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-4.5V

ID = -2.1A

Figure 3. On-Resistance Variation with

Temperature.

20

VDS = -5V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

0.511.522.533.5

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC 25oC

125oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

with Source Current and Temperature.

FDC6020C RevB (W)

Typical Characteristics : Q1

FDC6020C

5

ID = -4.2A

4

3

2

, GATE-SOURCE VOLTAGE (V)

1

GS

-V

0

0123456789

Q

VDS = -5V

, GATE CHARGE (nC)

g

-15V

-10V

1100

1000

900

800

700

600

500

400

CAPACITANCE (pF)

300

200

100

C

RSS

0

0 4 8 12 16 20

C

ISS

C

OSS

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

10ms

1

, DRAIN CURRENT (A)

D

-I

0.01

VGS = -4.5V

SINGLE PULSE

0.1

R

= 102oC/W

JA

θ

T

= 25oC

A

0.1 1 10 100

-V

DS

100ms

1s

DC

, DRAIN-SOURCE VOLTAGE (V)

1ms

10µs

100µs

10

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1 MHz V

= 0 V

GS

SINGLE PULSE

= 102°C/W

R

JA

θ

T

= 25°C

A

FDC6020C RevB (W)

Typical Characteristics : Q2

FDC6020C

20

VGS = 4.5V

3.5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

0 0.5 1 1.5 2

3.0V

2.5V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

2.0V

2.8

2.6

2.4

VGS = 2.0V

2.2

2

1.8

, NORMALIZED

1.6

DS(ON)

1.4

R

1.2

DRAIN-SOURCE ON-RESISTANCE

1

0.8 048121620

2.5V

3.0V

I

, DRAIN CURRENT (A)

D

3.5V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 5.9A

= 4.5V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.08

0.07

0.06

0.05

0.04

, ON-RESISTANCE (OHM)

DS(ON)

0.03

R

0.02

TA = 25oC

1.522.533.544.55

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

4.5V

ID = 2.9A

Figure 13. On-Resistance Variation with

Temperature.

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

11.522.5

V

, GATE TO SOURCE VOLTAGE (V)

GS

T

=-55oC 25oC

125oC

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6020C RevB (W)

Typical Characteristics : Q2

FDC6020C

1000

900

800

700

600

500

400

300

CAPACITANCE (pF)

200

100

C

0

0 4 8 121620

C

ISS

C

OSS

RSS

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

5

ID = 5.9A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

V

0

012345678

Q

, GATE CHARGE (nC)

g

VDS = 5V

10V

15V

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

1ms

10µs

100µs

10

10ms

1

VGS = 4.5V

, DRAIN CURRENT (A)

SINGLE PULSE

D

0.1

I

R

= 102oC/W

JA

θ

T

= 25oC

A

0.01

0.1 1 10 100

V

100ms

1s

DC

, DRAIN-SOURCE VOLTAGE (V)

DS

10

SINGLE PULSE

R

8

θ

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum

Power Dissipation.

f = 1MHz V

GS

= 102°C/W

JA

T

= 25°C

A

= 0 V

1

R

(t) = r(t) * R

JA

D = 0.5

0.2

0.1

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSI ENT

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

θ

R

JA

θ

P(pk)

T

- TA = P * R

J

Duty Cycle, D = t

= 102 °C/W

t

1

t

2

JA

θ

(t)

JA

θ

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDC6020C RevB (W)

Dimensional Outline and Pad Layout

FDC6020C

Bottom View

Top View

Recommended Landing Pattern

For Standard Dual Configuration

FDC6020C RevB (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™

FACT Quiet Series™



FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ImpliedDisconnect™ ISOPLANAR™

Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC



OPTOPLANAR™ P ACMAN™ POP™

Power247™ PowerTrench



QFET



QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART ST ART™ SPM™ Stealth™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET



VCX™



FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I5