Datasheet fdc5661n_f085 Datasheet

October 2008

FDC5661N_F085 N-Channel Logic Level PowerTrench

FDC5661N_F085

N-Channel Logic Level PowerTrench® MOSFET

60V, 4A, 60mΩ

Features

 R

 R

 Typ Q

 Low Miller Charge

 Qualified to AEC Q101

 RoHS Compliant

DS(on)

DS(on)

= 47mΩ at V

= 60mΩ at V

= 14.5nC at VGS = 10V

g(TOT)

GS

GS

= 10V, ID = 4.3A

= 4.5V, ID = 4A

Applications

 DC/DC converter

 Motor Drives

tm

®

MOSFET

©2008 Fairchild Semiconductor Corporation
FDC5661N_F085 Rev. A

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

T

J

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current Continuous (V

= 10V) 4.3

GS

Pulsed 20

Power Dissipation 1.6 W

, T

Operating and Storage Temperature -55 to +150

STG

Thermal Characteristics

FDC5661N_F085 N-Channel Logic Level PowerTrench

A

o

C

R

θJC

R

θJA

Thermal Resistance Junction to Case 30

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 78

o

o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

.661N FDC5661N_F085 SSOT

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 60 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(th)

r

DS(on)

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA12.03V

Drain to Source On Resistance

-6 7” 8mm 3000 units

V

= 48V, - - 1

DS

= 0V TA = 150oC - - 250

V

GS

= 4.3A, VGS= 10V - 38 47

I

D

I

= 4A, VGS= 4.5V - 46 60

D

= 4.3A, VGS= 10V

I

D

= 150oC

T

J

-6986

C/W

C/W

μA

mΩ

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

gs

Q

gd

Input Capacitance

Output Capacitance - 68 - pF

Reverse Transfer Capacitance - 36 - pF

V

= 25V, VGS = 0V,

DS

f = 1MHz

Gate Resistance f = 1MHz - 2.6 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

Gate to Source Gate Charge

Gate to Drain “Miller“ Charge - 2.9 - nC

FDC5661N_F085 Rev. A www.fairchildsemi.com2

V

DD

I

D

= 30V

= 4.3A

- 763 - pF

- 14.5 19 nC

-2.4-nC

FDC5661N_F085 N-Channel Logic Level PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1:

Turn-O n Time

Turn-O n Delay Time - 7.2 - ns

Rise Time - 1.6 - ns

Turn-Off Delay Time - 19.3 - ns

= 30V, ID = 4.3A

V

DD

= 10V, RGS = 6Ω

V

GS

- - 17.6 ns

Fall Time - 3.1 - ns

Turn-O ff Time - - 36 ns

I

= 4.3A - 0.8 1.25

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge - 10.0 13 nC

SD

= 2.1A - 0.8 1.0

I

SD

= 4.3A, dISD/dt = 100A/μs

I

SD

- 18.4 24 ns

V

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDC5661N_F085 Rev. A www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

)

FDC5661N_F085 N-Channel Logic Level PowerTrench

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

D = 0.50

0.20

JA

θ

0.10

0.05

0.02

0.01

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

-3

10

SINGLE PULSE

R

= 78oC/W

θ

JA

Figure 3.

-2

10

Normalized Maximum Transient Thermal Impedance

-1

10

t, RECTANGULAR PULSE DURATION(s

5

4

3

VGS = 10V

2

VGS = 4.5V

, DRAIN CURRENT (A)

D

1

I

R

θ

JA

= 78oC/W

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE(oC)

Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature

P

DM

t

1

t

x R

2

2

2

+ T

θJA

A

10

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0

10

1

10

θJA

10

®

MOSFET

3

100

VGS = 10V

10

, PEAK CURRENT (A)

DM

I

SINGLE PULSE

R

= 78oC/W

θ

JA

1

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDC5661N_F085 Rev. A www.fairchildsemi.com4

TC = 25oC

FOR TEMPERATURES

o

I = I

2

C DERATE PEAK

150 - T

5

2

10

125

C

3

10

ABOVE 25

CURRENT AS FOLLOWS:

0

10

1

10

Typical Characteristics

FDC5661N_F085 N-Channel Logic Level PowerTrench

100

10

10us

100us

1

1ms

, DRAIN CURRENT (A)
I

D

0.1

0.01

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

T

J

T

= 25oC

A

10ms

100ms

1s
DC

0.01 0.1 1 10 100 300

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5.

20

16

12

Forward Bias Safe Operating Area

VGS = 10V

VGS = 6V

VGS = 5V

VGS = 4.5V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

VGS = 4V

VGS = 3.5V

8

, DRAIN CURRENT (A)

D

I

4

V

= 3V

GS

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

20

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

16

V

= 5V

DD

12

8

TJ = 150oC

, DRAIN CURRENT (A)

4

D

I

0

012345

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

120

(mΩ)

90

60

, DRAIN TO SOURCE

ON-RESISTANCE

DS(on)

r

30

246810

Transfer Characteristics

I

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80μs

= 4.3A

D

DUTY CYCLE = 0.5% MAX

TJ = 150oC

TJ = 25oC

®

MOSFET

Figure 7.

Saturation Characteristics Figure 8.

2.0

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

1.8

1.6

1.4

1.2

NORMALIZED

1.0

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-80 -40 0 40 80 120 160

Figure 9.

TJ, JUNCTION TEMPERATURE(oC)

Normalized Drain to Source On

ID = 4.3A

= 10V

V

GS

Resistance vs Junction Temperature

FDC5661N_F085 Rev. A www.fairchildsemi.com5

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

1.2

1.1

1.0

0.9

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.7

0.6

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE(oC)

Figure 10.

Normalized Gate Threshold Voltage vs

Junction Temperature

V

I

D

GS

= 250

=

V

DS

μ

A

Typical Characteristics

FDC5661N_F085 N-Channel Logic Level PowerTrench

1.15

I

= 250μA

D

1.10

1.05

1.00

0.95

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.90

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

Figure 11.

Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

ID = 4.3A

8

VDD = 20V

6

4

VDD = 40V

VDD = 30V

2000

C

1000

100

CAPACITANCE (pF)

f = 1MHz
V

= 0V

GS

10

0.1 1 10 50

VDS, DRAIN TO SOURCE VOLTAGE (V)

iss

C

oss

C

rss

Figure 12. Capacitance vs Drain to Source

Voltage

Figure 14.

®

MOSFET

2

, GATE TO SOURCE VOLTAGE(V)

GS

0

V

0 3 6 9 12 15

Figure 13.

Qg, GATE CHARGE(nC)

Gate Charge vs Gate to Source Voltage

FDC5661N_F085 Rev. A www.fairchildsemi.com6

TRADEMARKS

tm

®

tm

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *

™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
F-PFS™

* EZSWITCH™ and FlashWriter

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

®

®

®
®

®

*

®

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR

PDP SPM™
Power-SPM™
PowerTrench

®

®

®

®

PowerXS™

SM

Programmable Active Droop™

®

QFET
QS™
Quiet Series™
RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™

®

The Power Franchise

®

TinyBoost™
TinyBuck™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

FDC5661N_F085 N-Channel Logic Level PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

FDC5661N_F085 Rev. A www.fairchildsemi.com7

Rev. I37