Datasheet FDC365P Datasheet (Fairchild)

tm

FDC365P

P-Channel PowerTrench® MOSFET

-35V, -4.3A, 55mΩ

Features

 Max r
 Max r
 RoHS Compliant

= 55mΩ at VGS = -10V, ID = -4.2A

DS(on)

= 80mΩ at VGS = -4.5V, ID = -3.2A

DS(on)

General Description

This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the applications.

Applications

 Inverter
 Power Supplies

November 2007

®

technology to

r

and optimized Bvdss capability to offer

DS(on)

FDC365P P-Channel PowerTrench

®

MOSFET

S

D

D

G

Pin 1

SuperSOT

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -35 V
Gate to Source Voltage ±20 V

-Continuous (Note 1a) -4.3

-Pulsed -20
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C

D

D

TM

-6

= 25°C unless otherwise noted

C

1

D

D

2

G

3

D

6

5

D

S

4

Thermal Characteristics

R

θJA

R

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78
Thermal Resistance, Junction to Ambient (Note 1b) 156

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

.365P FDC365P SSOT6 7’’ 8mm 3000 units

©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C

1

www.fairchildsemi.com

FDC365P P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -35 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -28V, V
Gate to Source Leakage Current VGS = ±20V, V

ID = -250µA, referenced to 25°C -26 mV/°C

= 0V -1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.8 -3 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = -10V, ID = -4.2A 8.7 S

ID = -250µA, referenced to 25°C 5.0 mV/°C
VGS = -10V, ID = -4.2A 45 55

VGS = -10V , ID = -4.2A, TJ = 125°C 69 90

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 105 135 pF
Reverse Transfer Capacitance 55 80 pF

VDS = -20V, VGS = 0V,
f = 1MHz

530 705 pF

Gate Resistance f = 1MHz 6.1 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 15 28 ns

VDD = -20V, ID = -4.2A,
VGS = -10V, R

GEN

= 6Ω

7 13 ns

Fall Time 3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 1.7 nC

= 0V to -10V

GS

= 0V to -5V 6 9 nC

GS

VDD = -20V,
ID = -4.2A

11 15 nC

Gate to Drain “Miller” Charge 2.2 nC

mΩVGS = -4.5V, ID = -3.2A 70 80

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

1: R

θJA

R

θJC

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 7 14 nC

is guaranteed by design while R

is determined by the user’s board design.

θJA

GS

IF = -4.2A, di/dt = 100A/µs

a.

78°C/W when mounted on a 1

2

in

pad of 2 oz copper on FR-4

board.

= 0V, IS = -1.3A (Note 2) -0.8 -1.2 V

16 29 ns

b.

156°C/W when mounted on a
minimum pad of 2 oz copper.

2

www.fairchildsemi.com

FDC365P P-Channel PowerTrench

Typical Characteristics T

20

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

012345

Figure 1.

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

Figu r e 3. Nor m a lized O n - Resist a n ce

VGS = -10V

VGS = -4.5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

-VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

ID = - 4.2A
V

= -10V

GS

T

, JUNCTION TEMPERATURE (

J

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = -4V

VGS = -3.5V

VGS = -3V

o

C)

4.0

3.5

3.0

VGS = -3V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = -3.5V

2.5

VGS = -4V

VGS = -4.5V

V

= -10V

GS

2.0

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
048121620

-ID, DRAIN CURRENT(A)

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

200

ID = -4.2A

160

(mΩ)

120

, DRAIN TO

80

DS(on)

r

40

SOURCE ON-RESISTANCE

0

246810

-VGS, GATE TO SOURCE VOLTAG E (V)

Figure 4.

On-Resistanc e vs Gate to

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

Source Voltage

®

MOSFET

20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

16

V

= -5V

DS

12

8

, DRAIN CURRENT (A)

D

4

-I

0

12345

TJ = 150oC

TJ = 25oC

-VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C

TJ = -55oC

20

V

= 0V

GS

TJ = 150oC

TJ = 25oC

TJ = -55oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Dr ai n Diode

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

10

1

Forward Voltage vs Source Current

3

www.fairchildsemi.com

FDC365P P-Channel PowerTrench

Typical Characteristics T

10

ID = -4.2A

8

VDD = -20V

6

V

= -15V

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

-V

0

036912

Figure 7.

30

10

1

THIS AREA IS
LIMITED BY r

0.1

, DRAIN CURRENT (A)

D

-I

0.01

0.1 1 10 100

Figure 9.

DD

Qg, GATE CHARGE(nC)

Gate Charge Characteristics Figure 8.

DS(on)

SINGLE PULSE
T

= MAX RATED

J

o

= 156

θJA

C/W

o

C

R
TA = 25

-VDS, DRAIN to SOURCE VOLTAGE (V)

Forward Bias Safe

Operating Area

= 25°C unless otherwise noted

J

VDD = -25V

0.1ms

1ms

10ms

100ms

1s
10s

DC

1000

100

CAPACITANCE (pF)

30

0.1 1 10

400

100

10

), PEAK TRANSIENT POWER (W)

1

PK

P(

0.5

10-410-310-210

Figure 10.

C

iss

C

oss

f = 1MHz
V

= 0V

GS

C

rss

35

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Capacitance vs Drain

to Source Voltage

-1

SINGLE PULSE
R

= 156oC/W

θJA

T

= 25oC

A

110

100 1000

VGS = -10V

t, PULSE WIDTH (s)

Single Pulse Maximum Power Dissipation

®

MOSFET

2

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.1

0.2

0.1

0.05

0.02

0.01

-4

10

10

θJA

IMPEDANCE, Z

0.01

NORMALIZED THERMAL

0.001

©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C

SINGLE PULSE
R

-3

θJA

= 156

o

C/W

-2

10

t, RECTANGULAR PULSE DURATION (sec)

-1

10

110

Figure 11. Transient Thermal Response Curve

4

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

θJA

A

100 1000

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDC365P P-Channel PowerTrench

®

MOSFET

©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C

5

www.fairchildsemi.com

Preliminary Datasheet

®

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FDC365P P-Channel PowerTrench

®

MOSFET

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use

2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to
result in a significant injury to the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild Semiconductor. The datasheet is printed for reference infor­mation only.

©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C

6

www.fairchildsemi.com

Rev. I31