Page 1
January 2004
FDC3616N
100V N-Channel PowerTrench MOSFET
FDC3616N
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
• Load Switching
Features
• 3.7 A, 100 V. R
R
• High performance trench technology for extremely
DS(ON)
low R
• Low gate charge (23nC typical)
• High power and current handling capability
= 70 mΩ @ VGS = 10 V
DS(ON)
= 80 mΩ @ VGS = 6.0 V
DS(ON)
• Fast switching speed.
Bottom Drain
G
S
S
SuperSOT-6
TM
FLMP
S
S
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
1
2
3
6
5
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage 100 V
DSS
V
Gate-Source Voltage
GSS
± 20
ID Drain Current – Continuous (Note 1a) 3.7 A
PD
TJ, T
STG
– Pulsed 20
Maximum Power Dissipation (Note 1a) 2 W
Operating and Storage Junction Temperature Range
(Note 1b)
1.1
−55 to +150 °C
V
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 60
(Note 1b)
0.5
111
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2004 Fairchild Semiconductor Corpora tion
.616 FDC3616N 7’’ 8mm 3000 units
°C/W
FDC3616N Rev C1 (W)
Page 2
FDC3616N
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy
DSS
Single Pulse,V
3.7A
IAR Drain-Source Avalanche Current 3.7 A
= 50 V, ID=
DD
244 mJ
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
DSS
I
Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
100
114
V
mV/°C
µA
µA
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
= 10 V, ID = 3.7 A
V
GS
= 6.0 V, ID = 3.5 A
V
GS
= 10 V, ID = 3.7 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 19 S
2 2.5 4 V
–7.4
55
58
104
70
80
139
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1215 pF
iss
C
Output Capacitance 72 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.1
V
= 50 V, V
DS
f = 1.0 MHz
= 0 V,
GS
39 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 4 8 ns
t
Turn–Off Delay Time 28 45 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 23 32 nC
Qgs Gate–Source Charge 4.8 nC
Qgd Gate–Drain Charge
V
= 50 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 50 V, ID = 3.7 A,
DS
= 10 V
V
GS
GEN
= 6 Ω
10 20 ns
5.4 nC
FDC3616N Rev C1 (W)
Page 3
FDC3616N
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
trr Diode Reverse Recovery Time 41 nS
Qrr Diode Reverse Recovery Charge
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a) 60°C/W when
is guaranteed by design while R
θJC
θCA
mounted on a 1in2 pad
of 2 oz copper
I
= 3.7 A,
F
= 100 A/µs
d
iF/dt
107 nC
VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.2 V
is determined by the user's board design.
b) 111°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC3616N Rev C1 (W)
Page 4
Typical Characteristics
FDC3616N
20
VGS = 10V
6.0V
15
10
, DRAIN CURRENT (A)
D
5
I
0
012345
4.5V
5.0V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
4.0V
3.5V
1.8
1.6
VGS = 4.0V
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 5 10 15 20
4.5V
I
D
5.0V
, DRAIN CURRENT (A)
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
ID = 3.7 A
2
V
= 10V
GS
1.8
1.6
1.4
1.2
, NORMALIZED
1
0.8
DS(ON)
R
0.6
0.4
DRAIN-SOURCE ON-RESISTANCE
0.2
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.16
0.14
0.12
0.1
0.08
, ON-RESISTANCE (OHM)
TA = 25oC
DS(ON)
0.06
R
0.04
246810
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
10V
ID =1.85 A
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 10V
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
2 2.5 3 3.5 4 4.5 5
TA = 125oC
25oC
-55oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
-55oC
with Source Current and Temperature.
FDC3616N Rev C1 (W)
Page 5
Typical Characteristics
FDC3616N
10
ID =3.7A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25
Qg, GATE CHARGE ( nC)
VDS = 30V
50V
70V
1800
1500
1200
900
600
CAPACITANCE (pF)
C
300
OSS
C
RSS
0
0 255075100
C
ISS
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
D
I
0.01
VGS = 10V
SINGLE PULSE
0.1
= 111oC/W
R
θJA
T
= 25oC
A
0.1 1 10 100 1000
V
, DRAIN-SOURCE VOLTAGE (V)
DS
1s
10s
DC
10ms
100ms
100µs
1ms
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
SINGLE PULSE
R
f = 1MHz
V
= 111°C/W
θJA
T
= 25°C
A
GS
= 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.01
THERMAL RESISTANCE
0.001
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) * R
θJA
R
= 111 °C/W
θJA
P(pk)
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
θJA
(t)
θJA
/ t
1
2
FDC3616N Rev C1 (W)
Page 6
Dimensional Outline and Pad Layout
FDC3616N
FDC3616N Rev C1 (W)
Page 7
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
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This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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Rev. I7
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