Datasheet FDC3535 Datasheet (Fairchild)

FDC3535

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

P-Channel Power Trench® MOSFET

-80 V, -2.1 A, 183 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 183 mΩ at VGS = -10 V, ID = -2.1 A

DS(on)

= 233 mΩ at VGS = -4.5 V, ID = -1.9 A

DS(on)

DS(on)

General Description

This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.

Applications

 Load Switch
 Synchronous Rectifier

June 2010

®

, switching performance and

DS(on)

process that has

FDC3535 P-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Drain to Source Voltage -80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) -2.1

-Pulsed -10
Single Pulse Avalanche Energy (Note 3) 37 mJ
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.7
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

.535 FDC3535 SSOT-6 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

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FDC3535 P-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -80 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -64 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= -250 μA, referenced to 25 °C -64 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1-1.6-3V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 5 mV/°C

D

V

= -10 V, ID = -2.1 A 147 183

GS

= -4.5 V, ID = -1.9 A 176 233

GS

= -10 V, ID = -2.1 A, TJ = 125 °C 246 307

V

GS

Forward Transconductance VDD = -10 V, ID = -2.1 A 6.3 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 49 65 pF
Reverse Transfer Capacitance 24 40 pF

= -40 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 5.7 Ω

659 880 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 3.1 10 ns
Turn-Off Delay Time 23 38 ns

= -40 V, ID = -2.1 A,

V

DD

V

= -10 V, R

GS

GEN

= 6 Ω

Fall Time 2.9 10 ns
Total Gate Charge VGS = 0 V to -10 V
Total Gate Charge V
Total Gate Charge 1.6 nC

= 0 V to -4.5 V 6.8 10 nC

GS

= -40 V

V

DD

I

= -2.1 A

D

Gate to Drain “Miller” Charge 2.7 nC

6.5 13 ns

14 20 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

R

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 23 38 nC

is determined by the user's board design.

θCA

= 25 oC, L = 3 mH, IAS = -5 A, VDD = -80 V, VGS = -10 V.

J

= 0 V, IS = -2.1 A (Note 2) -0.81 -1.3 V

GS

= -2.1 A, di/dt = 100 A/μs

I

F

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

2

25 40 ns

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

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FDC3535 P-Channel Power Trench

012345

0

2

4

6

8

10

VGS = -3.5 V

VGS = -10 V

VGS = -2.5 V

VGS = -3 V

VGS = -4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-I

D

, DRAIN CURRENT (A)

-VDS, DRA IN TO SOURCE VOLTAGE (V)

0246810

0

1

2

3

4

VGS = -3.5 V

VGS = -2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -4.5 V

VGS = -3 V

V

GS

= -10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = - 2.1 A
V

GS

= -10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

100

200

300

400

500

600

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = -2.1 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

-VGS, GATE TO S OURCE VOLTAGE ( V )

12345

0

2

4

6

8

10

TJ = 25 oC

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VO LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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FDC3535 P-Channel Power Trench

0 3 6 9 12 15

0

2

4

6

8

10

ID = -2.1 A

VDD = -50 V

V

DD

= -30 V

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -40 V

0.1 1 10 100

10

100

1000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10

1

2

3

4

5

6

7

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms )

-I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

R

θJA

= 78 oC/W

V

GS

= -4.5 V

V

GS

= -10 V

-I

D

, DRAIN CURRENT (A)

T

C

, Ambient TEMPERATURE (

o

C)

0.1 1 10 100 300

0.005

0.01

0.1

1

10

20

THIS AR E A IS
LIMITED BY r

DS(on)

100 us

1 ms

100 ms

1 s

DC

10 s

10 ms

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 175

o

C/W

TA = 25

o

C

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

10-410-310-210-1110

100 1000

0.5

1

10

100

1000

SINGLE PULSE
R

θJA

= 175 oC/W

T

A

= 25 oC

VGS = -10 V

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

Figure 11.

Operating Area

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Forward Bias Safe

Figure 10.

Max i mum C o ntin u ous Dra i n

Current vs Ambient Temperature

Fi gur e 12 . Si ngl e Pu lse Max imu m

Power Dissipation

4

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FDC3535 P-Channel Power Trench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 175 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

5

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FDC3535 P-Channel Power Trench

Dimensional Outline and Pad Layout

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

6

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FDC3535 P-Channel Power Trench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datasheet is for reference information only.

7

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Rev. I48