Datasheet FDC3512 Datasheet (Fairchild Semiconductor)

FDC3512

80V N-Channel PowerTrench



MOSFET

FDC3512

February 2002

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

Features

• 3.0 A, 80 V R

R

• High performance trench technology for extremely

low R

• Low gate charge (13nC typ)

• High power and current handling capability

• Fast switching speed

DS(ON)

= 77 mΩ @ VGS = 10 V

DS(ON)

= 88 mΩ @ VGS = 6 V

DS(ON)

S

D

D

1

2

6

5

G

SuperSOT -6

TM

D

D

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

3

4

Symbol Parameter Ratings Units

V

Drain-Source Voltage 80 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 3.0 A

PD

TJ, T

STG

– Pulsed 20

Maximum Power Dissipation (Note 1a) 1.6 W

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

± 20

0.8

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 30

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2002 Fairchild Sem iconductor Corporation

.352 FDC3512 7’’ 8mm 3000 units

°C/W

°C/W

FDC3512 Rev B2 (W )

FDC3512

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W

Drain-Source Avalanche Energy Single Pulse, VDD = 40 V, ID=3.0 A 90 mJ

DSS

IAR Drain-Source Avalanche Current 3.0 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

J

I

Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1

DSS

I

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

GSSF

I

Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

GSSR

Breakdown Voltage Temperature
Coefficient

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

80 V

80

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

I

On–State Drain Current VGS = 10 V, VDS = 5 V 10 A

D(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source
On Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

V

= 10 V, ID = 3.0 A

GS

V

= 6.0 V, ID = 2.8 A

GS

= 10 V, ID = 3.0 A;TJ = 125°C

V

GS

gFS Forward Transconductance VDS = 10 V, ID = 3.0 A 14 S

2 2.4 4 V

–6

56
61
97

77
88

141

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 634 pF

iss

C

Output Capacitance 58 pF

oss

C

Reverse Transfer Capacitance

rss

= 40 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

28 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 7 14 ns

d(on)

tr Turn–On Rise Time 3 6 ns

t

Turn–Off Delay Time 24 28 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 13 18 nC

Qgs Gate–Source Charge 2.4 nC

Qgd Gate–Drain Charge

= 40 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

V

= 40 V, ID = 3.0 A,

DS

V

= 10 V

GS

GEN

= 6 Ω

4 8 ns

2.8 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A

VSD

t

rr

Qrr Diode Reverse Recovery Charge

Notes:

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

1. R

θJA

pins. R

a. 78°C/W when mounted on a 1in

b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycl e ≤ 2.0%

Drain–Source Diode Forward
Voltage

Diode Reverse Recovery Time 28.2 nS

is guaranteed by design while R

θJC

2

pad of 2oz copper on FR-4 board.

is determined by the user's board design.

θCA

V

= 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V

GS

I

= 3.0 A,

F

= 300 A/µs (Note 2)

d

iF/dt

48 nC

FDC3512 Rev B2(W )

)

E

)

)

Typical Characteristics

FDC3512

20

VGS = 10V

6.0V

15

10

, DRAIN CURRENT (A

5

D

I

0

012345

5.0V

4.5V

V

, DRAIN-SOURCE VOL TAGE (V)

DS

4.0V

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

VGS = 4.0V

4.5V

5.0V

6.0V

0 5 10 15 20

, DRAIN CURRENT (A)

I

D

10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.5

ID = 3.0A

2.2

1.9

1.6

1.3

, NORMALIZED

DS(ON)

R

0.7

DRAIN-SOURCE ON-RESISTANC

0.4

=10V

V

GS

1

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

T

J

0.18

0.14

0.1

, ON-RESISTANCE (OHM)

0.06

DS(ON)

R

0.02
246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

TA = 25oC

ID = 1.5 A

Figure 3. On-Resistance Variation with

Temperature.

20

VDS = 5V

15

10

TA = 125oC

, DRAIN CURRENT (A

5

D

I

0

2345

V

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

V

, BODY DIODE FORWARD VOLT AGE (V)

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC3512 Rev B2(W )

)

Typical Characteristics

FDC3512

10

ID = 3.0A VDS = 20V

8

60V

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

03691215

, GATE CHARGE (nC)

Q

g

40V

1000

800

600

400

CAPACITANCE (pF)

200

C

OSS

C

RSS

0

0 20406080

C

ISS

, DRAIN TO SOURCE VOL TAGE (V)

-V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A

0.1

D

I

0.01

= 156oC/W

R

θJA

= 25oC

T

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

V

DS

10s

DC

1s

100ms

10ms

100µs

1ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

SINGLE PULSE

R

θ

JA

f = 1MHz

V

GS

= 156°C/W

= 25°C

T

A

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

t

, TIME (sec)

1

R

(t) = r(t) + R

JA

θ

R

= 156°C/W

θJA

P(pk)

t

1

t

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

2

(t)

JA

θ

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDC3512 Rev B2(W )

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4