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FDC2512
150V N-Channel PowerTrench
MOSFET
FDC2512
February 2002
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
Features
• 1.4 A, 150 V. R
R
• High performance trench technology for extremely
low R
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed
DS(ON)
= 425 mΩ @ VGS = 10 V
DS(ON)
= 475 mΩ @ VGS = 6 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage 150 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 1.4 A
– Pulsed 8
Maximum Power Dissipation (Note 1a) 1.6 W PD
TJ, T
Operating and Storage Junction Temperature Range
stg
(Note 1b)
± 20
0.8
−55 to +150 °C
V
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.252 FDC2512 7’’ 8mm 3000 units
2002 Fairchild Sem iconductor Corporation
°C/W
°C/W
FDC2512 Rev B3 (W )
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Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbl Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V , VDS = 0 V –100 nA
= 0 V, I D = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
150 V
147
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current VGS = 10 V, VDS = 5 V 4 A
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
V
= 10 V, ID = 1.4 A
GS
V
= 6.0 V, ID = 1.3 A
GS
= 10 V, ID = 1.4 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 1.4 A 4 S
2 2.6 4 V
–5.6
319
332
624
425
475
875
mV/°C
mΩ
Dynamic Characteristics
V
C
Input Capacitance 344 pF
iss
C
Output Capacitance 22 pF
oss
C
Reverse Transfer Capacitance
rss
= 75 V, V
DS
f = 1.0 MHz
= 0 V,
GS
9 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6.5 13 ns
d(on)
tr Turn–On Rise Time 3.5 7 ns
t
Turn–Off Delay Time 22 33 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 8 11 nC
Qgs Gate–Source Charge 1.5 nC
Qgd Gate–Drain Charge
= 75 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 75 V, ID = 1.4 A,
V
DS
V
= 10 V
GS
GEN
= 6 Ω
4 8 ns
2.3 nC
FDC2512
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A
VSD
t
rr
Qrr Diode Reverse Recovery Charge
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1.R
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 45.8 nS
is guaranteed by design while R
θJC
a) 78°C/W when
is determined by the user's board design.
θCA
mounted on a 1in2 pad
of 2 oz copper
= 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V
V
GS
= 1.4A,
I
F
= 300 A/µs (Note 2)
d
iF/dt
119 nC
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
FDC2512 Rev B3(W )
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Typical Characteristics
FDC2512
6
VGS = 10V
6.0V
4
2
, DRAIN CURRENT (A)
D
I
0
02468
4.5V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
4.0V
1.4
1.3
VGS = 4.0V
1.2
, NORMALIZED
1.1
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.9
01234
4.5V
5.0V
, DRAIN CURRENT (A)
I
D
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
ID = 1.4A
=10V
V
GS
1.8
1.4
, NORMALIZED
1
DS(ON)
R
0.6
DRAIN-SOURCE ON-RESISTANCE
0.2
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.8
0.7
0.6
0.5
0.4
, ON-RESISTANCE (OHM)
DS(ON)
0.3
R
TA = 25oC
0.2
345678910
TA = 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
10V
ID = 0.7A
Figure 3. On-Resistance Variation with
Temperature.
8
VDS = 25V
6
4
, DRAIN CURRENT (A)
D
2
I
0
23456
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = -55oC
25oC
125oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0 .2 0.4 0. 6 0.8 1 1.2
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
25oC
-55oC
with Source Current and Temperature.
FDC2512 Rev B3(W )
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Typical Characteristics
FDC2512
10
ID = 1.4A
8
6
4
2
, GATE-SOURCE VOLTAGE ( V)
GS
V
0
0123456789
Q
, GATE CHARGE (nC)
g
VDS = 50V
100V
75V
500
400
300
200
CAPACITANCE (pF)
100
C
RSS
0
0 25 50 75 100 125 150
C
ISS
C
OSS
V
, DRAIN TO SOURCE VOLT AGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10
R
LIMIT
DS(ON)
1
0.1
VGS = 10V
, DRAIN CURRENT (A)
D
I
0.001
SINGLE PULSE
0.01
R
= 156oC/W
θ
JA
= 25oC
T
A
0.1 1 10 100 1000
V
, DRAIN-SOURCE VOLTAGE (V)
DS
1s
DC
100ms
10ms
1ms
100µs
40
30
20
10
P(pk), PEAK TRANSIENT POWER ( W)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
SINGLE PULSE
R
f = 1MHz
= 0 V
V
GS
= 156°C/W
θ
JA
T
= 25°C
A
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
r(t), NORMALIZED EFFECTIVE
0.01
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
SINGLE PULSE
, TIME (sec)
t
1
R
θJA
R
JA
θ
)
P(pk
- TA = P * R
T
J
Duty Cycle, D = t
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
(t) = r(t) + R
= 156°C/W
t
1
t
2
θJA
(t)
θJA
/ t
1
2
FDC2512 Rev B3(W )
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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