Page 1
FDB8832
N-Channel Logic Level PowerTrench® MOSFET
30V, 80A, 2.1mΩ
Features
Typ r
Typ Q
Low Miller Charge
= 1.5mΩ at VGS = 5V, ID = 80A
DS(on)
= 100nC at V
g(5)
GS
= 5V
Applications
12V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
FDB8832 N-Channel Logic Level PowerTrench
September 2006
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
E
E
R
F
I
D
A
E
L
M
P
L
E
M
E
N
T
A
T
I
O
N
ABS
DC-DC Converters
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDB8832 Rev. A
www.fairchildsemi.com1
Page 2
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
DSS
V
GS
I
D
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current Continuous (TC < 165oC, V
Drain Current Continuous (T
Drain Current Continuous (T
< 163oC, V
C
= 25oC, V
amb
= 10V) 80
GS
= 5V) 80
GS
= 10V, with R
GS
= 43oC/W) 34
θJA
Pulsed See Figure 4
E
AS
P
D
T
J
Single Pulse Avalanche Energy (Note 1) 1246 mJ
Power Dissipation 300 W
o
Derate above 25
, T
Operating and Storage Temperature -55 to +175
STG
C2W/oC
o
Thermal Characteristics
R
R
R
Thermal Resistance, Junction to Case 0.5
θJC
Thermal Resistance, Junction to Ambient (Note 2) 62
θJA
Thermal Resistance, Junction to Ambient, lin2 copper pad area 43
θJA
o
o
o
C/W
C/W
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB8832 FDB8832 TO-263AB 330mm 24mm 800 units
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
r
DS(
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
Q
Q
Q
Q
Q
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 1.0 1.6 3.0 V
Drain to Source On Resistance
on)
Input Capacitance
Output Capacitance - 2140 - pF
Reverse Transfer Capacitance - 1260 - pF
Gate Resistance VGS = 0.5V, f = 1MHz - 1.2 - Ω
Total Gate Charge at 10V VGS = 0 to 10V
g(TOT)
Total Gate Charge at 5V VGS = 0 to 5V - 100 130 nC
g(5)
Threshold Gate Charge VGS = 0 to 1V - 10.9 14.2 nC
g(TH)
Gate to Source Gate Charge
gs
Gate Charge Threshold to Plateau - 22 - nC
gs2
Gate to Drain “Miller” Charge - 43 - nC
gd
= 25°C unless otherwise noted
J
VDS = 24V
V
= 0V
GS
ID = 80A, VGS = 10V - 1.4 1.9
ID = 80A, VGS = 5V - 1.5 2.1
ID = 80A, VGS = 4.5V - 1.6 2.2
ID = 80A, VGS = 10V
TJ = 175°C
VDS = 15V, VGS = 0V,
f = 1MHz
- - 1
TJ = 150°C - - 250
- 2.3 3.0
- 11400 - pF
- 204 265 nC
VDD = 15V
I
= 80A
D
Ig = 1. 0mA
- 33 - nC
µA
mΩ
FDB8832 N-Channel Logic Level PowerTrench
A
C
®
MOSFET
FDB8832 Rev. A www.fairchildsemi.com2
Page 3
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Switching Characteristics
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time - 24 - ns
Turn-On Rise Time - 73 - ns
Turn-Off Delay Time - 54 - ns
V
= 15V, ID = 80A
DD
V
= 5V, RGS = 1.5Ω
GS
Turn-Off Fall Time - 38 - ns
Turn-Off Time - - 149 ns
--155ns
Drain-Source Diode Characteristics
I
= 75A - 0.8 1.25 V
V
SD
t
rr
Q
rr
Notes:
1: Starting T
2: Pulse width = 100s.
Source to Drain Diode Voltage
Reverse Recovery Time IF = 75A, di/dt = 100A/µs - 59 77 ns
Reverse Recovery Charge IF = 75A, di/dt = 100A/µs - 67 87 nC
= 25oC, L = 0.61mH, IAS = 64A, VDD = 30V, VGS = 10V.
J
SD
= 40A - 0.8 1.0 V
I
SD
FDB8832 N-Channel Logic Level PowerTrench
®
MOSFET
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
FDB8832 Rev. A www.fairchildsemi.com3
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
certification.
Page 4
Typical Characteristics
FDB8832 N-Channel Logic Level PowerTrench
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULIPLIER
0.0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
θJC
0.05
0.1
0.02
0.01
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
SINGLE PULSE
1E-3
-5
10
-4
10
Figure 3.
-3
10
t, RECTANGULAR PULSE DURATION(s)
Normalized Maximum Transient Thermal Impedance
350
300
250
CURRENT LIMITED
BY PACKAGE
VGS = 10V
200
150
100
, DRAIN CURRENT (A)
D
I
50
0
25 50 75 100 125 150 175
VGS = 5V
TC, CASE TEMPERATURE(oC)
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
x R
0
®
MOSFET
t
1
t
2
2
+ T
θJC
C
1
10
10000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
100
, PEAK CURRENT (A)
DM
I
SINGLE PULSE
10
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDB8832 Rev. A www.fairchildsemi.com4
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-2
10
-1
10
I = I
25
o
C DERATE PEAK
175 - T
C
150
0
10
1
10
Page 5
Typical Characteristics
FDB8832 N-Channel Logic Level PowerTrench
4000
1000
100
10
LIMITED
, DRAIN CURRENT (A)
D
I
BY PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
110
DS(on)
SINGLE PULSE
= MAX RATED
T
J
o
T
= 25
C
C
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5.
200
150
100
Forward Bias Safe Operating Area
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 5V
V
DD
TJ = 175oC
TJ = 25oC
10us
100us
1ms
10ms
DC
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R
≠
0
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
100
10
STARTING TJ = 150oC
, AVALANCHE CURRENT (A)
AS
I
60
1
0.01 0.1 1 10 100 1000
- VDD)
DSS
DSS
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
200
150
100
V
V
V
= 3.5V
GS
PULSE DURATION = 80µs
= 10V
GS
DUTY CYCLE = 0.5% MAX
= 5V
GS
- VDD) +1]
5000
®
MOSFET
V
= 3V
GS
50
, DRAIN CURRENT (A)
D
I
0
01234
TJ = -55oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics Figure 8.
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
(mΩ)
TJ = 175oC
2
, DRAIN TO SOURCE
1
ON-RESISTANCE
DS(on)
r
0
246810
Figure 9.
TJ = 25oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
, DRAIN CURRENT (A)
50
D
I
0
0.0 0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
ID = 80A
V
= 10V
GS
FDB8832 Rev. A www.fairchildsemi.com5
Page 6
Typical Characteristics
FDB8832 N-Channel Logic Level PowerTrench
1.4
1.2
1.0
0.8
0.6
0.4
NORMALIZED GATE
THRESHOLD VOLTAGE
0.2
0.0
-80 -40 0 40 80 120 160 200
Figure 11.
40000
10000
1000
CAPACITANCE (pF)
100
0.1 1 10
V
= V
GS
DS
I
= 250µA
D
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs
Junction Temperature
C
iss
C
oss
C
rss
f = 1MHz
= 0V
V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
1.10
I
= 250µA
D
1.05
1.00
0.95
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
0.90
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
ID = 80A
8
VDD = 12V
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
0 50 100 150 200 250
Q
, GATE CHARGE(nC)
g
VDD = 15V
VDD = 18V
®
MOSFET
Figure 13.
Capacitance vs Drain to Source
Voltage
FDB8832 Rev. A www.fairchildsemi.com6
Figure 14.
Gate Charge vs Gate to Source Voltage
Page 7
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FDB8832 N-Channel Logic Level PowerTrench
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
®
MOSFET
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDB8832 Rev. A www.fairchildsemi.com7
Rev. I20
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