Datasheet FDB86135 Datasheet (Fairchild)

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FDB86135

D2-PAK FDB Series

N-Channel PowerTrench® MOSFET

100V, 176A, 3.5mΩ

FDB86135 N-Channel PowerTrench

June 2011

Features

•Max R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low R

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

, T

STG

= 3.5mΩ at VGS = 10V, ID = 75A

DS(on)

= 25

C unless otherwise noted

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Curren - Continuous (Silicon Limited) TC = 25oC 176

- Continuous T

- Pulsed 704 A Single Pulsed Avalanche Energy (Note 3) 658 mJ

- T

= 25oC (Note 1a) 227 W

Power Dissipation Operating and Storage Temperature Range -55 to +175

= 25oC (Note 1b) 2.4 W/oC

- T

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

• DC-DC primary bridge

• DC-DC Synchronous rectification

• Hot swap

= 25oC 120

= 25oC(Note 1a) 75

MOSFET

A - Continuous( Package Limited) T

Thermal Characteristics

Symbol Parameter Ratings Units

θJC

θJA

Thermal Resistance, Junction to Case (Note 1) 0.66 Thermal Resistance, Junction to Ambient (Note 1a) 62.5

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB86135 FDB86135 D2-PAK 330mm 24mm 800

C/W

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FDB86135 N-Channel PowerTrench

NOTES:

1. R

θJA

is determined with the device mounte d on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. boar d of FR-4 ma terial. R

θJC

is guaranteed by design while R

θCA

is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 36.3 A, VDD = 100 V, VGS = 10 V.

40 °C/W when mounted on a 1 in

pad of 2 oz copper

62.5 °C/W when mounted on a minimum pad of 2 oz copper

Electrical Characteristics T

= 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ΔBV

ΔT I

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80V, V Gate to Body Leakage Current VGS = ±20V, V

= 250μA, Referenced to 25oC - 0.07 - V/oC

= 0V - - 1 μA

= 0V - - ±100 nA

On Characteristics

GS(th)

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.0 3.5 mΩ Forward Transconductance VDS = 10V, ID = 75A - 167 - S

Dynamic Characteristics

C C C Q Q Q Q

iss oss rss g(tot) gs gs2 gd

Input Capacitance Output Capacitance - 2430 3230 pF Reverse Transfer Capacitance - 210 - pF Total Gate Charge at 10V Gate to Source Gate Charge - 24 - nC Gate Charge Threshold to Plateau - 8 - nC Gate to Drain “Miller” Charge - 25 - nC

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time Turn-On Rise Time - 54 118 ns Turn-Off Delay Time - 37 84 ns Turn-Off Fall Time - 11 32 ns

= 25V, VGS = 0V

f = 1MHz

= 80V, ID = 75A

= 10V

VDD = 50V, ID = 75A V

= 10V, R

GEN

= 4.7Ω

- 5485 7295 pF

- 89 116 nC

-2254ns

MOSFET

Drain-Source Diode Characteristics

Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 129 - nC

= 0V, I

/dt = 100A/μs

= 75A (Note 2) - - 1.25 V

= 75A, V

= 80V

-72-ns

FDB86135 Rev. C

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Typical Performance Characteristics

0.02 0.1 1 10

100

600

*Notes:

1. 250

μs Pulse Test

2. T

= 25oC

= 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

, Drain Current[A]

VDS, Drain-Source Voltage[V]

23456

100

300

-55oC

150oC

*Notes:

1. V

= 10V

2. 250

μs Pulse Test

25oC

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.2 0.4 0.6 0.8 1.0 1.2

100

500

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 60 120 180 240 300 360

0.0025

0.0030

0.0035

0.0040

*Note: TC = 25oC

VGS = 20V

VGS = 10V

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0306090

*Note: ID = 75A

VDS = 20V V

= 50V

= 80V

, Gate-Source Voltage [V]

Qg, Total Ga te C h arge [nC]

0.1

110

100

5000

10000

oss

iss

= Cgs + Cgd (Cds = shorted)

oss

= Cds + C

rss

= C

*Note:

1. V

= 0V

2. f = 1MH z

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDB86135 N-Channel PowerTrench

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDB86135 Rev. C

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Typical Performance Characteristics

-100 -50 0 50 100 150 200

0.6

0.9

1.2

1.5

1.8

2.1

*Notes:

1. V

= 10V

2. I

= 75A

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.90

0.95

1.00

1.05

1.10

*Notes:

1. V

= 0V

2. I

= 10mA

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

0.1 1 10 100 300

0.1

100

1000

3000

1ms

100μs

10ms

100ms

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R

DS(on)

*Notes:

1. T

= 25oC

2. T

= 175oC

3. Single Pulse

25 50 75 100 125 150 175

100

150

200

, Drain Current [A]

TC, Case Tempera ture [oC]

Limited by package

0.01 0.1 1 10 100 1000

100

STARTING TJ = 150oC

STARTING TJ = 25oC

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

If R = 0 t

AV = (L)(IAS)/(1.3*RATED BVDSS-VDD)

If R = 0 t

AV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

FDB86135 N-Channel PowerTrench

MOSFET

Figure 11. Unclamped Inductive Switching Capability

FDB86135 Rev. C

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Typical Performance Characteristics

-5

-4

-3

-2

-1

110

0.001

0.01

0.1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θ JC

(t) = 0 .6 6oC/W Max.

2. Du ty F a c t o r, D = t

1/t2

3. TJM - TC = PDM * Z

θ JC

(t)

0.5

Sin g le p u ls e

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

Figure 12. Transient Thermal Response Curve

FDB86135 N-Channel PowerTrench

MOSFET

FDB86135 Rev. C

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDB86135 N-Channel PowerTrench

MOSFET

FDB86135 Rev. C

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Page 7

DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

D =

Gate Pulse Width Gate Pulse Period

--------------------------

FDB86135 N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

MOSFET

FDB86135 Rev. C

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Page 8

Mechanical Dimensions

LAND PATTERN RECOMMENDATION

DETAIL A, ROTATED 90

SCALE: 2X

SEATING

PLANE

GAGE PL AN E

SEE DETAIL A

10.67

9.65

1.68

1.00

9.65

8.38

1.78 MAX

1.78

1.14

0.99

0.51

5.08

(2.12)

6.22 MIN

6.86 MIN

15.88

14.61

1.65

1.14

4.83

4.06

0.74

0.33



80

2.79

1.78

(5.38)

0.25 MAX

0.25

0.25 ABM M

-A-

-B-

0.10 B

NOTE S: UN L ESS OTHERW ISE SP EC IF IED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER ANSI Y14.5M - 1994. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF TH E PACKAG E). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N F) FILENAME: TO263A02REV6

12.70

9.45

3.80

1.05

(6.40)

10.00

UNLESS NOTED, ALL DIMS TYPICAL

5.08

FDB86135 N-Channel PowerTrench

D2-PAK

MOSFET

FDB86135 Rev. C

Dimensions in Millimeters

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Page 9

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, own ed by Fairchild Semiconductor and/or its global su bsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ AX-CAP™*

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CROSSVOLT™

CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

® ®

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FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™

max™

G GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

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TinyBoost™ TinyBuck™ TinyCalc™

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TranSiC TriFault Detect™ TRUECURRENT

μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDB86135 N-Channel PowerTrench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) sup port or su stain li fe, and (c) whose failure to perform when properly used in acco rdance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the i ndustry. All manufactures of semicond uctor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either di rectly from Fairch ild or from Authorized Fairchi ld Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fair child is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributor s.

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDB86135 Rev. C

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for refe rence information only.

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Rev. I54