Datasheet FDB8447L Datasheet (Fairchild)

FDB8447L
40V N-Channel PowerTrench® MOSFET

40V, 50A, 8.5mΩ
Features

 Max r

 Max r

 Fast Switching

 RoHS Compliant

= 8.5mΩ at VGS = 10V, ID = 14A

DS(on)

= 11mΩ at VGS = 4.5V, ID = 11A

DS(on)

General Description

This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the application.

r

DS(on)

Application

 Inverter

 Power Supplies

and optimized BV

D

February 2007

®

technology to

capability to offer

DSS

FDB8447L 40V N-Channel PowerTrench

®

MOSFET

D

G

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100

Drain-Source Avalanche Energy (Note 3) 153 mJ

Power Dissipation TC= 25°C 60

Power Dissipation (Note 1a) 3.1

Operating and Storage Junction Temperature Range –55 to +150 °C

TO-263AB

FDB Series

= 25°C unless otherwise noted

C

S

= 25°C (Note 1) 66

C

= 25°C (Note 1a) 15

A

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 2.1

Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8447L FDB8447L TO-263AB 330mm 24mm 800 units

©2007 Fairchild Semiconductor Corporation
FDB8447L Rev.C

°C/W

1

www.fairchildsemi.com

FDB8447L 40V N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 32V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 35 mV/°C

= 0V 1 µA

GS

= 0V ±100 nA

GS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.9 3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 5V, ID = 14A 58 S

ID = 250µA, referenced to 25°C -5 mV/°C

VGS = 10V, ID = 14A 7.4 8.5

VGS = 10V, ID = 14A, TJ=125°C 10.8 12.4

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 250 335 pF

Reverse Transfer Capacitance 150 225 pF

VDS = 20V, VGS = 0V,
f = 1MHz

1970 2620 pF

Gate Resistance f = 1MHz 1.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 6 12 ns

Turn-Off Delay Time 28 45 ns

VDD = 20V, ID = 14A
VGS = 10V, R

GEN

= 6Ω

11 20 ns

Fall Time 4 10 ns

Total Gate Charge, V

Total Gate Charge, V

Gate to Source Gate Charge 6 nC

= 10V

GS

= 5V 20 28 nC

GS

VDD =20V, ID = 14A
V

= 10V

GS

37 52 nC

Gate to Drain “Miller” Charge 7 nC

mΩVGS = 4.5V, ID = 11A 8.7 11. 0

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

R

θJC

a. 40°C/W when mounted on a 1 in

b. 62.5°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T

FDB8447L Rev.C

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 24 36 nC

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

= 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, V

J

is determined by the user’s board design.

θJA

2

pad of 2 oz copper

GS

= 10V.

= 0V, IS = 14A (Note 2) 0.8 1.2 V

GS

IF = 14A, di/dt = 100A/µs

2

28 42 ns

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FDB8447L 40V N-Channel PowerTrench

Typical Characteristics T

100

PULSE DURATION = 80µs

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

01234

Figure 1.

1.6

ID = 14A

V

= 10V

GS

1.4

1.2

1.0

NORMALIZED

0.8

VGS = 10V

VGS = 4.5V

VGS = 4V

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = 3.5V

VGS = 3V

3.0

VGS = 3V

2.5

VGS = 3.5V

2.0

1.5

NORMALIZED

1.0

VGS = 10V

0.5

DRAIN TO SOURCE ON-RESISTANCE

020406080100

VGS = 4.5V

ID, DRAIN CURRENT(A)

VGS = 4V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

25

ID = 7A

(mΩ)

20

15

, DRAIN TO

10

DS(on)

r

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

®

MOSFET

0.6

DRAIN TO SOURCE ON-RESISTANCE

100

, DRAIN CURRENT (A)

D

I

FDB8447L Rev.C

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

80

VDD = 5V

60

40

TJ = 25oC

20

0

1234

TJ = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

Figure 5. Transfer Characteristics

3

SOURCE ON-RESISTANCE

5

345678910

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

V

= 0V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

TJ = 125oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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FDB8447L 40V N-Channel PowerTrench

Typical Characteristics T

10

ID = 14A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

0

GS

V

0 10203040

Qg, GATE CHARGE(nC)

Figure 7.

Gate Charge Characteristics Figure 8.

20

10

, AVALANCHE CURRENT(A)

AS

I

1

0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE(ms)

Figure 9.

U n c l a m p e d I n d u c t i v e

Switching Capability

300

100

10

V

VDD = 20V

TJ = 125oC

= 25°C unless otherwise noted

J

= 10V

DD

VDD = 30V

TJ = 25oC

100us

3000

C

iss

1000

C

oss

C

CAPACITANCE (pF)

f = 1MHz

100

50

= 0V

V

GS

0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

C a p a c i t a n c e v s D r a i n

to Source Voltage

80

60

V

= 10V

GS

40

Limited by Package

, DRAIN CURRENT (A)

20

D

I

R

= 2.1oC/W

θJC

0

25 50 75 100 125 150

V

= 4.5V

GS

TC, CASE TEMPERATURE (oC)

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

1000

VGS = 10V

FOR TEMPERATURES

o

ABOVE 25

CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

150 Tc–

---------------------

125

40

®

MOSFET

Tc = 25oC

, DRAIN CURRENT (A)

D

I

0.1

FDB8447L Rev.C

1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(on)

SINGLE PULSE
T

= MAX RATED

J

= 25oC

T

C

1ms

10ms
100ms

0.1 1 10 100

VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

Operating Area

100

), PEAK TRANSIENT POWER (W)

PK

P(

SINGLE PULSE

50

-4

10

Figure 12.

-3

10

-2

10

t, PULSE WIDTH (s)

10

-1

0

10

S i n g l e P u l s e M a x i m u m

1

10

Power Dissipation

4

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FDB8447L 40V N-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE -DESCENDI NG ORDER

1

D = 0.5

0.2

θJC

0.1

0.05

0.02

0.01

IMPEDANCE, Z

NORMALIZED THERMAL

0.1

SINGLE PULSE

0.05

-4

10

-3

10

= 25°C unless otherwise noted

J

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

P

DM

t

1

t

2

1/t2

x R

+ T

θJC

θJC

C

0

10

1

10

®

MOSFET

FDB8447L Rev.C

5

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FDB8447L 40V N-Channel PowerTrench

®

®

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably

2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

expected to result in a significant injury to the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product develop-

ment. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice in order to improve
design.

Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-

ued by Fairchild Semiconductor.The datasheet is printed for reference infor­mation only.

6

©2007 Fairchild Semiconductor Corporation

Rev. I23

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