Datasheet fdb8442 Datasheet

FDB8442

N-Channel PowerTrench® MOSFET

40V, 80A, 2.9mΩ

November 2006

FDB8442 N-Channel PowerTrench

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Q

 UIS Capability (Single Pulse and Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

E

L

= 2.1mΩ at VGS = 10V, ID = 80A

DS(on)

= 181nC at V

g(10)

Body Diode

rr

E

R

F

D

A

E

I

M

P

L

E

M

E

N

T

A

T

I

O

N

GS

= 10V

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Steering

 Integrated Starter / Alternator

 Distributed Power Architectures and VRMs

 Primary Switch for 12V Systems

®

MOSFET

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current Continuous (TC<158 oC, V

= 25oC, V

amb

= 10V) 80

GS

= 10V, with R

GS

= 43oC/W) 28

θJA

Pulsed See Figure 4

E

AS

P

D

T

J

Single Pulse Avalanche Energy (Note 1) 720 mJ

Power Dissipation 254 W

o

Derate above 25

, T

Operating and Storage Temperature -55 to +175

STG

C1.7W/oC

o

Thermal Characteristics

R

Thermal Resistance Junction to Case 0.59

θJC

Thermal Resistance Junction to Ambient TO-263, lin2 copper pad area 43

θJA

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8442 FDB8442 TO-263AB 330mm 24mm 800 units

FDB8442 N-Channel PowerTrench

ADrain Current Continuous (T

C

®

MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

VDS = 32V V

= 0V

GS

TJ = 150°C - - 250

- - 1

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 2 2.9 4 V

ID = 80A, VGS = 10V - 2.1 2.9

Drain to Source On Resistance

on)

ID = 80A, VGS = 10V, TJ = 175°C

- 3.6 5.0

µA

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

Input Capacitance

Output Capacitance - 1040 - pF

Reverse Transfer Capacitance - 640 - pF

VDS = 25V, VGS = 0V, f = 1MHz

- 12200 - pF

Gate Resistance VGS = 0.5V, f = 1MHz - 1.0 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

g(TOT)

Threshold Gate Charge VGS = 0 to 2V - 23 30 nC

g(TH)

Gate to Source Gate Charge

gs

Gate Charge Threshold to Plateau - 26 - nC

gs2

Gate to Drain “Miller” Charge - 41 - nC

gd

VDD = 20V I

= 80A

D

Ig = 1mA

- 181 235 nC

- 49 - nC

FDB8442 Rev. A www.fairchildsemi.com2

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

(on)

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 19.5 - ns

Turn-On Rise Time - 19.3 - ns

Turn-Off Delay Time - 57 - ns

V

= 20V, ID = 80A

DD

V

= 10V, RGS = 2Ω

GS

Turn-Off Fall Time - 17.2 - ns

Turn-Off Time - - 118 ns

--62ns

Drain-Source Diode Characteristics

I

= 80A - 0.9 1.25 V

V

SD

t

rr

Q

rr

Notes: 1: Starting T 2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time IF = 75A, di/dt = 100A/µs - 49 64 ns

Reverse Recovery Charge IF = 75A, di/dt = 100A/µs - 70 91 nC

= 25oC, L = 0.35mH, IAS = 64A

J

SD

= 40A - 0.8 1.0 V

I

SD

FDB8442 N-Channel PowerTrench

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDB8442 Rev. A www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

FDB8442 N-Channel PowerTrench

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULIPLIER

0.0 0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

D = 0.50

0.20

θJC

0.10

0.1

0.05

0.02

0.01

IMPEDANCE, Z

NORMALIZED THERMAL

SINGLE PULSE

1E-3

-5

10

-4

10

Figure 3.

-3

10

t, RECTANGULAR PULSE DURATION(s)

Normalized Maximum Transient Thermal Impedance

300

CURRENT LIMITED

250

BY PACKAGE

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

25 50 75 100 125 150 175

Figure 2.

TC, CASE TEMPERATURE(oC)

Maximum Continuous Drain Current vs

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

x R

10

VGS = 10V

®

MOSFET

t

1

t

2

+ T

θJC

C

0

1

10

10000

VGS = 10V

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

1000

100

, PEAK CURRENT (A)

DM

I

SINGLE PULSE

10

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDB8442 Rev. A www.fairchildsemi.com4

TC = 25oC

FOR TEMPERATURES

o

ABOVE 25

CURRENT AS FOLLOWS:

-2

10

-1

10

I = I

25

C DERATE PEAK

175 - T

150

0

10

C

1

10

Typical Characteristics

FDB8442 N-Channel PowerTrench

4000

1000

100

10

LIMITED BY PACKAGE

, DRAIN CURRENT (A)

1

D

OPERATION IN THIS

I

AREA MAY BE LIMITED BY r

0.1 110100

DS(on)

SINGLE PULSE T

= MAX RATED

J

o

T

= 25

C

10us

100us

1ms

10ms

DC

VDS, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 5.

160

120

80

40

, DRAIN CURRENT (A)

D

I

Forward Bias Safe Operating Area

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

= 5V

V

DD

TJ = 175oC

TJ = 25oC

TJ = -55oC

0

2.02.53.03.54.04.55.0 VGS, GATE TO SOURCE VOLTAGE (V)

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R

≠

0

t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100 1000

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

tAV, TIME IN AVALANCHE (ms)

Figure 6. Unclamped Inductive Switching

Capability

160

V

= 10V

GS

V

= 5V

120

GS

80

40

, DRAIN CURRENT (A)

D

I

0

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 4.5V

GS

V

= 4V

GS

5000

®

MOSFET

Figure 7.

Transfer Characteristics Figure 8.

50

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

40

(mΩ)

30

TJ = 175oC

20

, DRAIN TO SOURCE

ON-RESISTANCE

10

DS(on)

r

0

45678910

Figure 9.

TJ = 25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Drain to Source On-Resistance

Variation vs Gate to Source Voltage

FDB8442 Rev. A www.fairchildsemi.com5

Saturation Characteristics

1.8

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE(oC)

Figure 10.

Normalized Drain to Source On

Resistance vs Junction Temperature

ID = 80A

V

= 10V

GS

Typical Characteristics

FDB8442 N-Channel PowerTrench

1.2

1.1

1.0

0.9

0.8

0.7

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.5

-80 -40 0 40 80 120 160 200

Figure 11.

40000

10000

1000

CAPACITANCE (pF)

100

0.1 1 10

V

= V

GS

DS

I

= 250µA

D

TJ, JUNCTION TEMPERATURE(oC)

Normalized Gate Threshold Voltage vs

Junction Temperature

C

iss

C

oss

C

rss

f = 1MHz

= 0V

V

GS

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.10

I

= 250µA

D

1.05

1.00

0.95

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.90

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

®

MOSFET

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

ID = 80A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

0

50

V

0 50 100 150 200

VDD = 15V

Q

, GATE CHARGE(nC)

g

VDD = 20V

VDD = 25V

Figure 13.

Capacitance vs Drain to Source

Voltage

FDB8442 Rev. A www.fairchildsemi.com6

Figure 14.

Gate Charge vs Gate to Source Voltage

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

UniFET™ UltraFET VCX™ Wire™

®

FDB8442 N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I20

FDB8442 Rev. A www.fairchildsemi.com7