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FDP7030BL/FDB7030BL
FDP7030BL/FDB7030BL
N-Channel Logic Level PowerTrench MOSFET
October 2003
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
Features
• 60 A, 30 V R
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low R
DS(ON)
= 9 mΩ @ VGS = 10 V
DS(ON)
R
= 12 mΩ @ VGS = 4.5 V
DS(ON)
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
• 175°C maximum junction temperature rating
and fast switching speed.
D
S
G
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
D
S
=25oC unless otherwise noted
A
TO-263AB
FDB Series
G
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
± 20
Drain Current – Continuous (Note 1) 60 A
– Pulsed (Note 1) 180
Total Power Dissipation @ TC = 25°C
Derate above 25°C
60 W
0.4
W/°C
Operating and Storage Junction Temperature Range –65 to +175
V
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 2.5
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB7030BL FDB7030BL 13’’ 24mm 800 units
FDP7030BL FDP7030BL Tube n/a 45
2003 Fairchild Semiconductor Corporation
°C/W
°C/W
FDP7030BL/FDB7030BL Rev D1(W)
Page 2
Electrical Characteristics T
FDP7030BL/FDB7030BL
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
DSS
I
AR
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source On–
Resistance
On–State Drain Current VGS = 10 V, VDS = 10 V 30 A
Forward Transconductance VDS = 10V, ID = 30 A 85 S
Input Capacitance 1760 pF
Output Capacitance 440 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.2
Turn–On Delay Time 12 22 ns
Turn–On Rise Time 12 22 ns
Turn–Off Delay Time 30 48 ns
Turn–Off Fall Time
Total Gate Charge 17 24 nC
Gate–Source Charge 5.4 nC
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current 60 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 30 nS
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
A
VDD = 15 V, ID = 60 A 73 mJ
60 A
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
22
mV/°C
µA
VGS = ± 20 V, VDS = 0 V ± 100
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 25 A
VGS= 10 V, ID = 30 A, TJ=125°C
VDS = 15 V, V
GS
= 0 V,
1 1.9 3 V
–5
6.8
8.5
10.1
9
12
18
nA
mV/°C
mΩ
f = 1.0 MHz
185 pF
Ω
VDD = 15V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
19 33 ns
VDS = 15 V, ID = 30 A,
VGS = 5 V
6.4 nC
VGS = 0 V, IS = 30 A (Note 1) 0.92 1.3 V
IF = 30 A,
diF/dt = 100 A/µs
20 nC
FDP7030BL/FDB7030BL Rev D1(W)
Page 3
Typical Characteristics
= 3.5V
FDP7030BL/FDB7030BL
180
150
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
VGS=10V
0 1 2 3 4 5
6.0V
4.5V
4.0V
3.5V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.0V
1.8
V
GS
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 20 40 60 80 100
4.0V
4.5V
ID, DRAIN CURRENT (A)
5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 30A
VGS =10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
0.030
0.025
0.020
0.015
, ON-RESISTANCE (OHM)
0.010
DS(ON)
R
0.005
TA = 25oC
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
6.0V
10V
ID = 30A
Figure 3. On-Resistance Variation with
90
VDS = 5V
75
60
45
30
, DRAIN CURRENT (A)
D
I
15
0
1.5 2 2.5 3 3.5 4 4.5
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Temperature.
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
-55oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1000
VGS = 0V
100
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature.
FDP7030BL/FDB7030BL Rev D1(W)
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Typical Characteristics
100µs
10µs
0.1
0.2
FDP7030BL/FDB7030BL
10
ID = 30A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
VDS = 10V
15V
20V
2500
2000
1500
1000
CAPACITANCE (pF)
500
C
0
0 5 10 15 20 25 30
C
oss
rss
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
1000
R
LIMIT
DS(ON)
100
1mS
10mS
100m
10
, DRAIN CURRENT (A)
D
I
VGS = 10V
SINGLE PULSE
R
= 2.5oC/W
θJC
TA = 25oC
DC
1
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
5000
4000
3000
2000
1000
P(pk), PEAK TRANSIENT POWER (W)
0
0.00001 0.0001 0.001 0.01 0.1 1
t1, TIME (sec)
f = 1MHz
VGS = 0 V
iss
SINGLE PULSE
R
= 2.5°C/W
θ
JC
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
1
0.1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.01
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.5
0.05
0.02
0.01
SINGLE PULSE
Power Dissipation.
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
R
(t) = r(t) * R
JC
θ
R
= 2.5 °C/W
θJC
JC
θ
P(pk
t
1
t
2
TJ - TA = P * R
Duty Cycle, D = t1 / t
FDP7030BL/FDB7030BL Rev D1(W)
(t)
θJC
2
Page 5
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Definition of Terms
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Advance Information
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Rev. I5
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