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October 2001
FDP6676S
FDP6676S / FDB6676S
30V N-Channel PowerTrench
General Description
This MOSFET is designed to repl ace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion effic iency, providing a low
and low gate charge. The FDP/B6676S
R
DS(ON)
includes an integrated Schot tky diode using Fairchild’s
monolithic SyncFET t echnology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
G
D
S
TO-220
FDP Series
SyncFET™
G
S
Features
• 38 A, 30 V. R
R
• Includes SyncFET Schot tky body diode
• Low gate charge (40nC typical)
• High performance trench te chnology for extremely
low R
• High power and current handling capability
•
and fast switching
DS(ON)
D
= 6.5 mΩ @ VGS = 10 V
DS(ON)
= 8.0 mΩ @ VGS = 4.5 V
DS(ON)
G
D
TO-263AB
FDB Series
S
FDB6676S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1)
– Pulsed (Note 1)
PD
TJ, T
STG
TL Maximum lead temperature for soldering purposes,
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Junction Temperature Range –55 to +150
1/8” from case for 5 s econds
= 25°C
C
±16
76
150
70
0.56
275
W/°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
55
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6676S FDB6676S 13’’ 24mm 800
FDP6676S FDP6676S Tube n/a 45
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev . C (W)
V
A
W
°C
°C
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FDP6676S
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID=12A 310 mJ
DSS
IAR Drain-Source Avalanche Current 12 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
= 1 mA, Referenced to 25°C
I
D
25
mV/°C
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1. 3 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= 1 mA, Referenced to 25°C
I
D
VGS = 10 V, ID = 38 A
= 4.5 V, ID = 35 A
V
GS
=10 V, ID =38A, TJ=125°C
V
GS
–8.4
4.7
6.5
5.2
8.0
7.3
11
mV/°C
mΩ
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10 V, ID = 38 A 145 S
Dynamic Characteristics
C
Input Capacitance 4853 pF
iss
C
Output Capacitance 850 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
316 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 14 25 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 89 142 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 40 56 nC
Qgs Gate–Source Charge 10 nC
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
V
DS
= 10 V, R
V
GS
= 15 V, ID = 38 A,
V
DS
V
= 5 V
GS
GEN
= 6 Ω
31 50 ns
11 nC
FDB6676S
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 28.5 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
VGS = 0 V, IS = 3.5 A (Note 1)
VGS = 0 V, IS = 7 A (Note 1)
= 3.5 A,
I
F
= 300 A/µs (Note 2)
d
iF/dt
0.4
57 nC
0.7 V
0.5
FDP6676S/FDB6676S Rev C ( W)
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E
A
/
Typical Characteristics
FDP6676S
150
VGS = 10V
125
4.5V
100
75
50
, DRAIN CURRENT (A)
D
I
25
0
01234
3.5V
3.0V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
2.5V
1.8
VGS = 2.5V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 255075100125150
3.0V
3.5V
, DRAIN CURRENT (A)
I
D
4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 38A
=10V
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANC
0.6
-55 -35 -15 5 25 45 65 85 105
T
, JUNCTION TEMPERATURE (oC)
J
120
0.016
0.014
0.012
0.01
0.008
, ON-RESISTANCE (OHM)
DS(ON)
0.006
R
TA = 25oC
0.004
246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
FDB6676S
10V
ID = 19A
Figure 3. On-Resistance Variation with
Temperature.
90
VDS = 5V
75
60
45
30
, DRAIN CURRENT (A)
D
I
15
0
11.522.53
TA = 125oC
25oC
-55oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
T
= 125oC
1
25oC
0.1
, REVERSE DRAIN CURRENT (A)
S
I
0.01
00.20.40.60.8
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6676S/FDB6676S Rev C ( W)
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Typical Characteristics (continued)
FDP6676S
10
ID = 38A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 20406080
Q
, GATE CHARGE (nC)
g
VDS = 10V
15V
20V
6400
5600
4800
4000
3200
2400
CAPACITANCE (pF)
1600
800
0
0 5 10 15 20 25 30
C
OSS
C
RSS
V
C
ISS
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
1000
R
LIMIT
DS(ON)
100
10s
DC
10
, DRAIN CURRENT (A)
D
I
VGS = 10V
SINGLE PULSE
= 1.8oC/W
R
θ
JC
= 25oC
T
A
1
0.1 1 10 100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
1s
100m
10ms
1000
800
600
400
200
P(pk), PEAK TRANSIENT POWER (W)
0
1 10 100 1000
t
, TIME (sec )
1
f = 1MHz
V
= 0 V
GS
SINGLE PULSE
= 1.8°C/W
R
θ
JC
T
= 25°C
A
FDB6676S
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
R
R
P(pk
θJC
JC
θ
0.01
T
- TC = P * R
SINGLE
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
J
Duty Cycle, D = t
0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
(t) = r(t) * R
θJC
= 1.8 °C/W
t
1
t
2
(t)
θJC
/ t
1
2
FDP6676S/FDB6676S Rev C (W)
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v
Typical Characteristics (continued)
FDP6676S
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6676S.
Current :0.8A/di
Time : 12.5ns/div
Figure 12. FDP6676S SyncFET body diode
reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
TA = 100oC
0.01
0.001
0.0001
, REVERSE LEAKAGE CURRENT (A)
DSS
I
0.00001
0102030
TA = 25oC
, REVERSE VOLTAGE (V)
V
DS
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
FDB6676S
For comparison purpos es, Figure 13 s hows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6676).
Current : 0.8A/di v
Time : 12.5n s/div
Figure 13. Non-SyncFET (FDP6676) body
diode reverse recovery characteristic.
FDP6676S/FDB6676S Rev C (W)
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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