Page 1
FDP Series
TO-263AB
FDB Series
FDP
6670S
/FDB
6670S
查询FDB6670S供应商查询FDB6670S供应商
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench SyncFET™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDP6670S includes
DS(ON)
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
G
G
D
S
TO-220
Absolute Maximum Ratings T
S
o
=25
A
C unless otherwise noted
Features
• 31 A, 30 V. R
R
• Includes SyncFET Schottky body diode
• Low gate charge (23nC typical)
• High performance trench technology for extremely
low R
• High power and current handling capability
and fast switching
DS(ON)
D
= 8.5 mΩ @ VGS = 10 V
DS(ON)
= 12.5 mΩ @ VGS = 4.5 V
DS(ON)
D
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1)
– Pulsed (Note 1)
PD
TJ, T
STG
TL Maximum lead temperature for soldering purposes,
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range –55 to +150
1/8” from case for 5 seconds
±20
62
150
62.5
0.5
275
W
W/°C
°C
°C
V
A
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 2.1
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6670S FDB6670S 13’’ 24mm 800 units
FDP6670S FDP6670S Tube n/a 45
2001 Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)
°C/W
°C/W
Page 2
FDP
6670S
/FDB
6670S
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
Single Pulse Drain-Source
DSS
Avalanche Energy
IAR Maximum Drain-Source Avalanche
Current
VDD = 25 V, ID = 16.5 A
285 mJ
16.5 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1mA 30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
DSS
I
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 26mA, Referenced to 25°C 24 mV/°C
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1mA 1 2.2 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
D(on)
gFS Forward Transconductance VDS = 10 V, ID = 31 A 69 S
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 26mA, Referenced to 25°C
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
VGS=10 V, ID =31 A, TJ=125°C
–4.5
5
8
10
mV/°C
8.5
12.5
19
mΩ
Dynamic Characteristics
C
Input Capacitance 2639 pF
iss
C
Output Capacitance 737 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
222 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 13 24 ns
d(on)
tr Turn–On Rise Time 10 21 ns
t
Turn–Off Delay Time 39 62 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 23 32 nC
Qgs Gate–Source Charge 9 nC
Qgd Gate–Drain Charge
VDS = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 31 A,
VGS = 5 V
35 56 ns
8 nC
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 32 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
VGS = 0 V, IS = 3.5 A (Note 1)
VGS = 0 V, IS = 7 A (Note 1)
IF = 3.5 A,
diF/dt = 300 A/µs (Note 2)
0.39
0.48
56
0.7
0.9
nC
V
FDP6670S/FDB6670S Rev E (W)
Page 3
5.0V
6.0V
DRAIN-SOURCE ON-RESISTANCE
6.0V
5.0V
10V
7.0V
4.5V
-50
-250255075
100
125
= 10V
, ON-RESISTANCE (OHM)
, DRAIN CURRENT (A)
25oC
, REVERSE DRAIN CURRENT (A)
TA = 125oC
FDP
6670S
/FDB
6670S
Typical Characteristics
150
VGS = 10V
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V)
4.5V
4.0V
3.5V
2.2
2
VGS = 4.0V
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
0.8
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 31A
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
0.027
0.022
0.017
0.012
TA = 25oC
0.007
DS(ON)
R
0.002
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
8.0V
ID = 15.5A
Figure 3. On-Resistance Variation with
Temperature.
80
VDS = 5V
60
40
D
20
I
0
2 2.5 3 3.5 4 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
25oC
0.1
S
I
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
-55oC
with Source Current and Temperature.
FDP6670S/FDB6670S Rev E (W)
Page 4
, GATE-SOURCE VOLTAGE (V)
= 31A
= 10V
20V
15V
CAPACITANCE (pF)
, DRAIN CURRENT (A)
DC
100ms
SINGLE PULSE
1ms
10us
P(pk), PEAK TRANSIENT POWER (W)
TRANSIENT THERMAL RESISTANCE
P(pk
SINGLE PULSE
0.1
0.2
FDP
6670S
/FDB
6670S
Typical Characteristics (continued)
10
ID
8
6
4
2
GS
V
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
VDS
3600
3000
2400
1800
1200
600
CRSS
0
0 5 10 15 20 25 30
C
OSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
1000
100
RDS(ON) LIMIT
10
VGS = 10V
D
I
RθJC = 2.1oC/W
TA = 25oC
1
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
100µs
10ms
1000
800
600
400
200
0
0.0001 0.001 0.01 0.1 1
t1, TIME (sec)
f = 1MHz
VGS = 0 V
SINGLE PULSE
R
= 2.1°C/W
θJC
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
R
0.1
0.05
0.02
0.01
r(t), NORMALIZED EFFECTIVE
TJ - Tc = P * R
Duty Cycle, D = t1 / t
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
(t) = r(t) * R
JC
= 2.1 °C/W
JC
θ
t
JC
θ
1
t
2
(t)
θJC
2
FDP6670S/FDB6670S Rev E (W)
Page 5
, REVERSE LEAKAGE CURRENT (A)
FDP
6670S
/FDB
6670S
CURRENT: 0.8A/div
CURRENT: 0.8A/div
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670S.
TIME: 12.5ns/div
Figure 12. FDP6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.01
TA = 100oC
0.001
0.0001
TA = 25oC
DSS
I
0.00001
0 10 20 30
VDS, REVERSE VOLTAGE (V)
FDP6670S/FDB6670S Rev E (W)
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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