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FDP603AL / FDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
April 1998
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage applications such as DC/DC converters and high
efficiency switching circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
33 A, 30 V. R
R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
= 0.022 Ω @ VGS=10 V
DS(ON)
= 0.036 Ω @ VGS=4.5 V.
DS(ON)
.
DS(ON)
175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FDP603AL FDB603AL Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous ±20 V
Drain Current - Continuous 33 A
- Pulsed (Note 1) 100
P
D
Total Power Dissipation @ TC = 25°C
50 W
Derate above 25°C 0.33 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
R
JC
θ
R
JA
θ
© 1998 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 3 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
FDP603AL Rev.D
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Electrical Characteristics T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 12 A 100 mJ
Maximum Drain-Source Avalanche Current 12 A
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V
GS
= 0 V
32
10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
mV/oC
-100 nA
ON CHARACTERISTICS (Note 1)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V
Gate Threshold Voltage Temp.Coefficient
/∆T
J
Static Drain-Source On-Resistance
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 25 A
TJ =125 °C
-4.5
0.018 0.022
0.026 0.035
mV/oC
Ω
VGS = 4.5 V, ID = 10 A 0.03 0.036
I
I
g
D(on)
D(on)
FS
On-State Drain Current
VGS = 10 V, VDS = 10 V
On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A
Forward Transconductance
VDS = 10 V, ID = 25 A
60 A
24 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 345 pF
f = 1.0 MHz
Reverse Transfer Capacitance 95 pF
670 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time
VDD = 15 V, ID = 25 A
VGS = 10 V, R
GEN
= 24 Ω
Turn - Off Delay Time 20 36 nS
Turn - Off Fall Time 80 115 nS
g
gs
gd
Total Gate Charge V
Gate-Source Charge 3.5 nC
Gate-Drain Charge 5.5 nC
= 10 V
DS
ID = 25 A, V
GS
= 10 V
8 16 nS
102 140 nS
19 26 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuos Drain-Source Diode Forward Current 25 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 1) 1 1.3 V
TJ = 125°C
0.85 1.1
FDP603AL Rev.D
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Typical Electrical Characteristics
80
V =10V
GS
60
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
8.0
7.0
6.0
5.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
I = 25A
D
1.6
V = 10V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
4.5
4.0
3.0
3
V = 4.0V
GS
2.5
2
1.5
1
DS(ON)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20 40 60 80
4.5
5.0
6.0
I , DRAIN CURRENT (A)
D
7.0
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
0.06
0.05
0.04
T = 125°C
0.03
0.02
DS(ON)
R , ON-RESISTANCE (OHM)
0.01
3 4 5 6 7 8 9 10
V , GATE TO SOURCE VOLTAGE (V)
GS
J
25°C
8.0
I = 12.5A
D
10
Figure 3. On-Resistance Variation
with Temperature.
30
V = 10V
DS
25
20
15
10
D
I , DRAIN CURRENT (A)
5
0
1 2 3 4 5
T = 125°C
J
V , GATE TO SOURCE VOLTAGE (V)
GS
25°C
-55°C
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
V = 0V
GS
1
0.1
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
T = 125°C
J
25°C
-55°C
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP603AL Rev.D
Page 4
Typical Electrical Characteristics (continued)
10
I = 25A
D
8
6
4
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 5 10 15 20
Q , GATE CHARGE (nC)
g
V = 5.0V
DS
10V
20V
Figure 7. Gate Charge Characteristics.
200
100
DS(ON)
50
R Limit
20
10
5
V = 10V
GS
SINGLE PULSE
D
2
I , DRAIN CURRENT (A)
1
0.5
0.5 1 3 5 10 20 30 50
o
R = 3 C/W
JC
θ
T = 25 °C
A
V , DRAIN-SOURCE VOLTAGE (V))
DS
100ms
DC
10µs
1ms
10ms
100µs
2000
1000
500
200
CAPACITANCE (pF)
f = 1 MHz
100
V = 0V
GS
60
0.1 0.3 1 4 10 30
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance Characteristics.
2000
1600
1200
800
POWER (W)
400
0
0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (ms)
SINGLE PULSE
R =3.0° C/W
JC
θ
T = 25°C
C
C
C
C
iss
oss
rss
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.3
0.2
0.1
0.05
0.03
r(t), NORMALIZED EFFECTIVE
0.02
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t , TIME (ms)
1
R (t) = r(t) * R
R = 3.0 °C/W
θJC
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
θ
Figure 11. Transient Thermal Response Curve.
θJCθJC
JC
1 2
FDP603AL Rev.D
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